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IXTY5N50P

IXTY5N50P

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    SOT428

  • 描述:

    MOSFET N-CH 500V 4.8A TO-252AA

  • 数据手册
  • 价格&库存
IXTY5N50P 数据手册
IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 500V = 5A  1.4  TO-251 (IXTU) G D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 5 A IDM TC = 25C, Pulse Width Limited by TJM 10 A IA TC = 25C 5 A EAS TC = 25C 250 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 90 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.40 0.35 2.50 3.00 g g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263 & TO-251) Mounting Torque (TO-220) Weight TO-251 TO-252 TO-263 TO-220 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 50μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source      D = Drain Tab = Drain International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages   V D (Tab) Features  V 5.5 D (Tab) High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications  100 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 5 A 25 A 1.4   DS99446G(6/17) IXTU5N50P IXTA5N50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 3.0 VDS = 10V, ID = 0.5 • ID25, Note 1 4.7 S 620 pF 72 pF 6.3 pF 12.6 nC 4.3 nC 5.0 nC 22 ns 26 ns 65 ns 24 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) 1.4 C/W RthJC RthCS IXTY5N50P IXTP5N50P TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 5 A Repetitive, Pulse Width Limited by TJM 15 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 5A, -di/dt = 100A/μs, VR = 100V 400 ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTU5N50P IXTA5N50P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 5.0 10 VGS = 10V 7V 4.5 VGS = 10V 7V 9 6V 4.0 8 6V 7 I D - Amperes 3.5 I D - Amperes IXTY5N50P IXTP5N50P 3.0 2.5 2.0 5V 6 5 4 1.5 3 1.0 2 0.5 1 5V 0 0.0 0 1 2 3 4 5 6 7 0 8 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 5.0 3.4 VGS = 10V 7V 4.5 VGS = 10V 3.0 I D - Amperes 3.5 RDS(on) - Normalized 4.0 6V 3.0 2.5 2.0 1.5 2.6 I D = 5A 2.2 I D = 2.5A 1.8 1.4 1.0 1.0 5V 0.6 0.5 0.0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs. Drain Current 3.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 6 VGS = 10V o TJ = 125 C 5 2.6 4 I D - Amperes RDS(on) - Normalized 3.0 2.2 1.8 2 o TJ = 25 C 1.4 3 1 1.0 0.6 0 0 1 2 3 4 5 6 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 7 8 9 10 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTU5N50P IXTA5N50P Fig. 7. Input Admittance IXTY5N50P IXTP5N50P Fig. 8. Transconductance 7 10 o 6 o TJ = 125 C 8 o 25 C o - 40 C 7 g f s - Siemens 5 I D - Amperes TJ = - 40 C 9 4 3 o 25 C 6 5 o 125 C 4 3 2 2 1 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 4 5 6 7 I D - Amperes Fig. 10. Gate Charge 10 VDS = 250V 9 14 I D = 2.5A 8 I G = 10mA 12 V GS - Volts I S - Amperes 7 10 8 6 6 5 4 o TJ = 125 C 3 4 o TJ = 25 C 2 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 VSD - Volts 8 10 12 Fig. 12. Forward-Bias Safe Operating Area 10 RDS(on) Limit f = 1 MHz 25μs Ciss 1,000 100μs I D - Amperes Capacitance - PicoFarads 6 QG - NanoCoulombs Fig. 11. Capacitance 10,000 4 100 Coss 1ms 1 10ms DC 10 o TJ = 150 C o TC = 25 C Single Pulse Crss 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTU5N50P IXTA5N50P IXTY5N50P IXTP5N50P Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_5N50P(23) 6-19-17-C IXTU5N50P IXTA5N50P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 1 - Gate 2,4 - Drain 3 - Source c 0 5.55MIN OPTIONAL 1 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION TO-251 OUTLINE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXTY5N50P IXTP5N50P L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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