IXXH100N60B3

IXXH100N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 220 160 100 480 A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load ICM = 200 @ ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC z z z z z z 25 μA 2 mA = 70A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved 1.50 1.77 ±100 nA 1.80 V V Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability International Standard Package High Power Density Low Gate Drive Requirement Applications z V C = Collector Tab = Collector Advantages z z 5.5 TJ = 150°C IGES z z V Tab E Features z 830 C G = Gate E = Emitter z TJ TJM Tstg TL TSOLD G z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100284B(02/13) IXXH100N60B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 22 VCE = 25V, VGE = 0V, f = 1MHz IC = 70A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 Inductive load, TJ = 150°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 RthJC RthCS Notes: TO-247 (IXXH) Outline 40 S 4860 285 83 pF pF pF 143 nC 37 nC 60 nC 30 70 1.9 120 150 2.0 ns ns mJ ns ns mJ 2.8 32 60 2.3 150 200 2.8 ns ns mJ ns ns mJ 0.21 0.18 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH100N60B3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 140 350 VGE = 15V 13V 12V 120 VGE = 15V 11V 100 13V 250 80 10V 60 9V IC - Amperes IC - Amperes 14V 300 40 12V 200 11V 150 10V 100 8V 9V 20 50 7V 6V 0 0 0.4 0.8 1.2 1.6 2 2.4 8V 7V 0 2.8 0 2 4 6 8 Fig. 3. Output Characteristics @ T J = 150ºC VGE = 15V 13V 12V 120 IC - Amperes 80 60 9V 40 8V 7V 5V 1 1.5 2 2.5 3 1.2 18 20 150 175 = 140A C = 70A 1.0 I C = 35A 0.6 -50 3.5 -25 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 TJ = 25ºC 4.5 160 140 4.0 120 3.5 I 3.0 C IC - Amperes VCE - Volts C I VCE - Volts 5.0 16 1.4 0.8 20 0 I 1.6 10V 0.5 14 VGE = 15V 11V 100 0 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.8 VCE(sat) - Normalized 140 10 VCE - Volts VCE - Volts = 140A 2.5 80 60 70A 2.0 TJ = 150ºC 25ºC - 40ºC 100 40 1.5 20 35A 1.0 0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXH100N60B3 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 25ºC 60 g f s - Siemens VCE = 300V 14 150ºC VGE - Volts 50 I C = 70A I G = 10mA 12 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 220 10,000 180 160 1,000 IC - Amperes Capacitance - PicoFarads 200 Cies Coes 100 140 120 100 80 60 Cres 40 f = 1 MHz 20 5 10 15 20 25 30 35 RG = 2Ω dv / dt < 10V / ns 0 100 10 0 TJ = 150ºC 40 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 1 VCE(sat) Limit 25µs External Lead Limit 100µs 10 1ms 1 TJ = 175ºC 0.1 0.01 10ms TC = 25ºC Single Pulse DC 0.1 1 Z(th)JC - ºC / W ID - Amperes 100 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXH100N60B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4.5 5 7 Eoff 4.0 Eon - Eoff --6 TJ = 150ºC , VGE = 15V 4 2.5 3 I C 2.0 3 3 4 5 6 7 1 2 8 9 10 11 12 13 14 2 TJ = 25ºC 1 0 1 2 3 2 = 50A 1.5 4 VCE = 360V TJ = 150ºC Eoff - MilliJoules Eoff - MilliJoules I C = 100A 20 15 30 40 50 RG - Ohms 5 3 2 2 I C = 50A 1 1 0 75 100 I 260 220 180 I 3 4 5 6 7 120 TJ = 25ºC 100 80 50 60 70 9 10 11 12 13 14 15 80 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved tfi 90 40 100 td(off) - - - - 240 220 RG = 2Ω , VGE = 15V 200 VCE = 360V I C = 100A 220 180 200 160 180 140 I C = 50A 160 120 140 100 120 80 100 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 200 150 50 8 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 260 280 160 40 180 = 100A 100 240 200 30 C 140 280 320 240 TJ = 150ºC 20 260 220 2 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 360V 250 = 50A 100 t f i - Nanoseconds tfi RG = 2Ω , VGE = 15V 300 C RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 350 300 140 0 150 125 340 td(off) - - - - TJ - Degrees Centigrade 400 0 100 VCE = 360V t f i - Nanoseconds 3 50 90 t d(off) - Nanoseconds I C = 100A 25 80 TJ = 150ºC, VGE = 15V 300 4 VCE = 360V Eon - MilliJoules Eoff - MilliJoules tfi ---- RG = 2Ω , VGE = 15V 4 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 340 5 Eon 60 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 5 ---- Eon - MilliJoules 5 Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 4 VCE = 360V 3.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXXH100N60B3 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri VCE = 360V 140 76 120 C = 100A 60 100 52 80 44 I C = 50A 60 36 40 28 20 3 4 5 6 7 8 9 10 11 12 13 14 100 34 80 32 TJ = 150ºC, 25ºC 60 30 40 28 20 26 0 20 2 36 20 15 30 40 50 60 70 80 90 t d(on) - Nanoseconds I td(on) - - - - RG = 2Ω , VGE = 15V VCE = 360V 68 120 38 tri t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - TJ = 150ºC, VGE = 15V 140 t r i - Nanoseconds 160 84 24 100 IC - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 180 37 tri 160 td(on) - - - - 36 RG = 2Ω , VGE = 15V 35 VCE = 360V 120 34 100 I C 33 = 100A 80 32 60 31 I C = 50A 40 t d(on) - Nanoseconds t r i - Nanoseconds 140 30 20 29 0 25 50 75 100 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_100N60B3(7D)12-01-11B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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