IXXH100N60C3

Preliminary Technical Information XPTTM 600V IGBT GenX3TM IXXH100N60C3 VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 190 160 100 380 A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load ICM = 200 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque μs 830 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Weight z z z z z z z BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V 5.5 VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved z V High Power Density Low Gate Drive Requirement z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 25 μA 2 mA TJ = 150°C IGES z V Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability International Standard Package Applications z Characteristic Values Min. Typ. Max. C = Collector Tab = Collector Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab E Features z 10 C G = Gate E = Emitter z TJ TJM Tstg TL TSOLD G 1.68 1.97 ±100 nA 2.20 V V DS100282A(02/13) IXXH100N60C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 22 VCE = 25V, VGE = 0V, f = 1MHz IC = 70A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 Inductive load, TJ = 150°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 RthJC RthCS Notes: TO-247 (IXXH) Outline 40 S 4810 275 80 pF pF pF 150 nC 34 nC 60 nC 30 70 2.00 90 75 0.95 ns ns mJ ns ns mJ 1.40 30 65 3.00 105 115 1.40 ns ns mJ ns ns mJ 0.15 0.18 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH100N60C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 140 VGE = 15V 13V 12V 120 11V 250 100 10V 80 IC - Amperes IC - Amperes 14V 13V VGE = 15V 300 9V 60 40 12V 200 11V 150 10V 100 8V 20 9V 50 7V 6V 0 0 0.5 1 1.5 2 8V 7V 0 2.5 3 3.5 0 2 4 6 8 2.0 140 VGE = 15V 13V 12V 14 16 18 20 150 175 VGE = 15V 1.8 11V VCE(sat) - Normalized I 100 IC - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 120 10 VCE - Volts VCE - Volts 10V 80 9V 60 40 C = 140A 1.6 1.4 1.2 I C = 70A I C = 35A 1.0 8V 20 0.8 7V 6V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 100 125 Fig. 6. Input Admittance 180 5.0 TJ = 25ºC 4.5 160 140 4.0 120 3.5 I C IC - Amperes VCE - Volts 50 TJ - Degrees Centigrade = 140A 3.0 2.5 TJ = 150ºC 25ºC - 40ºC 100 80 60 70A 2.0 40 1.5 20 35A 1.0 0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXH100N60C3 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 25ºC 60 g f s - Siemens VCE = 300V 14 I G = 10mA 12 150ºC VGE - Volts 50 I C = 70A 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 220 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 220 10,000 180 Cies 160 1,000 IC - Amperes Capacitance - PicoFarads 200 Coes 100 140 120 100 80 60 Cres 40 f = 1 MHz 20 0 100 10 0 5 10 15 20 25 30 35 40 TJ = 150ºC RG = 2Ω dv / dt < 10V / ns 150 200 VCE - Volts 250 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1000 1 VCE(sat) Limit 25µs ID - Amperes External Lead Limit 100µs 10 Z(th)JC - ºC / W 100 1ms 1 TJ = 175ºC 0.01 10ms TC = 25ºC Single Pulse DC 0.1 1 0.1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXH100N60C3 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3.0 Eon - --- TJ = 150ºC , VGE = 15V 2.5 1.5 4 1.0 I C = 50A 0.5 3 4 5 6 7 8 9 10 11 12 13 14 ---4 VCE = 360V TJ = 150ºC 1.5 3 1 2 TJ = 25ºC 3 0.5 2 0 1 20 15 30 40 50 RG - Ohms 5 90 0 100 280 tfi 1.0 t f i - Nanoseconds I C = 50A 240 220 200 140 I C = 50A 180 160 120 140 2 I 100 C = 100A t d(off) - Nanoseconds 3 260 VCE = 360V 4 1.5 td(off) - - - - TJ = 150ºC, VGE = 15V 160 I C = 100A VCE = 360V Eon - MilliJoules Eoff - MilliJoules 80 180 ---- RG = 2Ω , VGE = 15V 2.0 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 2.5 Eon 60 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff Eon - MilliJoules 5 Eon - MilliJoules I C = 100A 2.0 Eon RG = 2Ω , VGE = 15V 2 6 VCE = 360V 2 5 Eoff Eoff - MilliJoules Eoff Eoff - MilliJoules 2.5 7 120 100 0.5 25 50 75 100 125 1 150 80 80 2 3 4 5 6 7 10 11 12 13 14 15 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 200 160 180 tfi td(off) - - - - RG = 2Ω , VGE = 15V 125 120 100 100 TJ = 25ºC 75 80 50 60 100 t f i - Nanoseconds TJ = 150ºC 140 VCE = 360V 130 120 120 I C = 100A 110 100 100 90 I C = 50A 80 80 70 20 30 40 50 60 70 80 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 60 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 140 td(off) - - - - RG = 2Ω , VGE = 15V 140 t d(off) - Nanoseconds 150 160 tfi 150 160 VCE = 360V t f i - Nanoseconds 9 RG - Ohms TJ - Degrees Centigrade 175 8 IXXH100N60C3 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 76 TJ = 150ºC, VGE = 15V VCE = 360V 68 I 60 = 100A C 100 52 80 44 I C = 50A 60 36 40 28 20 3 4 5 6 7 8 9 10 11 12 13 14 100 34 TJ = 25ºC 80 32 TJ = 150ºC 60 28 20 26 20 15 30 40 0 20 2 36 RG = 2Ω , VGE = 15V 30 40 50 60 70 80 90 t d(on) - Nanoseconds 120 td(on) - - - - VCE = 360V t d(on) - Nanoseconds 140 38 tri 120 t r i - Nanoseconds 160 t r i - Nanoseconds 140 84 tri 24 100 IC - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 180 36 tri 160 RG = 2Ω , VGE = 15V VCE = 360V 140 35 34 120 33 I 100 C = 100A 32 80 31 60 30 I C = 50A 40 29 20 28 0 25 50 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - 27 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_100N60C3(7D)9-30-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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