IXXH150N60C3

Preliminary Technical Information 600V XPTTM IGBT GenX3TM IXXH150N60C3 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 300 160 150 700 A A A A IA EAS TC = 25°C TC = 25°C 75 750 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 300 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C 1360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque G Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features  TJ TJM Tstg 600V 150A 2.5V 75ns      International Standard Package Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages   High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V 5.5  V 25 A 1 mA IGES VCE = 0V, VGE = 20V 200 VCE(sat) IC 2.1 2.6 © 2016 IXYS CORPORATION, All Rights Reserved  V TJ = 150C = 100A, VGE = 15V, Note 1 TJ = 150C  2.5      Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts nA V V DS100558A(9/16) IXXH150N60C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 60A, VCE = 10V, Note 1 IC = 150A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 75A, VGE = 15V VCE = 400V, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 75A, VGE = 15V VCE = 400V, RG = 2 Note 2 RthJC RthCS Notes: 45 6460 403 138 VCE = 25V, VGE = 0V, f = 1MHz TO-247 (IXXH) Outline S D A A2 Q pF pF pF 200 52 80 nC nC nC 34 70 3.4 120 75 1.8 ns ns mJ ns ns mJ 32 68 3.9 150 80 2.2 ns ns mJ ns ns mJ 0.21 0.11 °C/W °C/W B E R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH150N60C3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 300 VGE = 15V 14V 13V 12V 250 VGE = 15V 13V 300 12V 250 11V 150 I C - Amperes I C - Amperes 200 10V 100 50 0 0.5 1 1.5 2 2.5 3 11V 150 10V 9V 100 8V 50 7V 0 200 3.5 9V 8V 7V 0 4 4.5 0 2 4 6 300 2.2 VGE = 15V 14V 13V VCE(sat) - Normalized I C - Amperes 200 150 10V 100 9V 50 0 2 2.5 3 3.5 4 4.5 150 175 1.6 1.4 I C = 150A 1.2 1.0 I C = 75A 0.4 5 -50 5.5 -25 0 25 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 6.0 TJ = 25ºC 5.5 180 160 5.0 140 I C - Amperes 4.5 VCE - Volts 18 I C = 300A 0.6 6V 1.5 16 0.8 8V 1 14 VGE = 15V 2.0 1.8 0.5 12 12V 11V 0 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 250 8 VCE - Volts VCE - Volts I C = 300A 4.0 3.5 3.0 150A 2.5 120 TJ = 150ºC 25ºC - 40ºC 100 80 60 2.0 40 1.5 20 75A 1.0 0 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXH150N60C3 Fig. 7. Transconductance Fig. 8. Gate Charge 100 16 TJ = - 40ºC 90 VCE = 300V 14 I C = 150A 80 150ºC V GE - Volts g f s - Siemens 60 I G = 10mA 12 25ºC 70 50 40 10 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 200 20 40 60 I C - Amperes 100 120 140 160 180 200 220 600 650 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 350 10,000 300 Cies 250 I C - Amperes Capacitance - PicoFarads 80 1,000 Coes 200 150 100 TJ = 150ºC 50 f = 1 MHz Cres 100 RG = 2Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 1100 150 200 250 300 350 400 450 500 550 VCE - Volts VCE - Volts Fig. 12. Maximum Trasient thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 aaa 0.2 VCE(sat) Limit 0.1 I D - Amperes 100 100µs 10 Z(th)JC - K / W 25µs 0.01 1ms 1 TJ = 175ºC TC = 25ºC Single Pulse 10ms 0.1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXXH150N60C3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 6 4.0 12 Eoff 5 Eon 6 2 4 I C = 50A 1 0 2 4 6 8 10 12 E off - MilliJoules 3 Eon 7 VCE = 400V 2.5 6 5 TJ = 150ºC 2.0 4 1.5 2 1.0 0 0.5 2 50 14 55 60 65 70 4.5 Eon 8 140 7 130 6 120 90 1 100 95 tfi 5 I C = 100A 4 2.0 3 1.5 500 td(off) 450 400 VCE = 400V 110 350 I C = 100A 100 300 90 250 2 80 1 70 0 150 60 I C = 50A 200 t d(off) - Nanoseconds 3.0 E on - MilliJoules E off - MilliJoules 85 TJ = 150ºC, VGE = 15V t f i - Nanoseconds VCE = 400V 2.5 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance RG = 2Ω , VGE = 15V 3.5 75 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 3 TJ = 25ºC RG - Ohms 4.0 E on - MilliJoules 8 8 RG = 2Ω , VGE = 15V 3.0 I C = 100A E on - MilliJoules Eoff - MilliJoules VCE = 400V 4 Eoff 3.5 10 TJ = 150ºC , VGE = 15V Fig. 14. Inductive Switching Energy Loss vs. Collector Current I C = 50A 1.0 0.5 25 50 75 100 125 150 100 2 4 6 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 120 td(off) tfi 170 80 130 120 TJ = 25ºC t f i - Nanoseconds t f i - Nanoseconds 140 170 I C = 50A 90 150 80 130 I C = 100A 70 60 110 110 50 50 55 60 65 70 75 80 85 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 90 95 100 100 60 25 50 75 100 TJ - Degrees Centigrade 125 90 150 t d(off) - Nanoseconds TJ = 150ºC t d(off) - Nanoseconds 150 190 VCE = 400V 160 100 70 14 td(off) RG = 2Ω , VGE = 15V 100 VCE = 400V 90 12 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 110 180 RG = 2Ω , VGE = 15V 110 10 RG - Ohms TJ - Degrees Centigrade 130 8 IXXH150N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance tri 160 tri 90 110 VCE = 400V 70 100 60 I C = 50A 80 50 60 40 40 30 20 20 0 10 2 4 6 8 10 12 38 VCE = 400V 90 36 TJ = 25ºC TJ = 150ºC 70 34 50 32 30 30 10 14 50 RG - Ohms 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 120 40 td(on) RG = 2Ω , VGE = 15V 80 I C = 100A t d(on) - Nanoseconds t r i - Nanoseconds td(on) TJ = 150ºC, VGE = 15V 140 130 100 t r i - Nanoseconds 180 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 28 100 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 42 tri 120 td(on) RG = 2Ω , VGE = 15V 40 100 38 I C = 100A 80 36 60 34 40 32 I C = 50A 20 30 0 25 50 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 400V 75 100 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_150N60C3(8D) 8-20-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.