IXXH30N60B3

IXXH30N60B3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC= 25°C TC = 110°C TC = 25°C, 1ms 60 30 115 A A A IA EAS TC = 25°C TC = 25°C 20 250 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 48 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C 270 W -55 ... +175 175 -55 ... +175 °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque °C °C 1.13/10 Nm/lb.in 6 g Weight Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 150C © 2013 IXYS CORPORATION, All Rights Reserved   25 250 A A 100 nA 1.66 1.97 1.85     Optimized for 5-30kHz Switching Square RBSOA Avalanche Capability Short Circuit Capability International Standard Package High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications  V C = Collector Tab = Collector Advantages  6.0 TJ = 150C IGES   V Tab E Features  300 260 C G = Gate E = Emitter  TJ TJM Tstg TL TSOLD G      Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100491B(7/13) IXXH30N60B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 8 IC = 24A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 24A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 24A, VGE = 15V VCE = 400V, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 24A, VGE = 15V VCE = 400V, RG = 10 Note 2 RthJC RthCS Notes: TO-247 (IXXH) Outline 14 S 1185 137 25 pF pF pF 39 9 17 nC nC nC 23 36 0.55 97 125 0.50 ns ns mJ ns ns mJ 150 0.80 23 34 1.10 112 180 0.70 ns ns mJ ns ns mJ 0.21 0.55 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH30N60B3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 50 VGE = 15V 14V 13V 45 40 VGE = 15V 120 12V 100 14V 11V 30 I C - Amperes I C - Amperes 35 10V 25 20 15 80 13V 12V 60 9V 40 8V 20 11V 10V 10 9V 8V 6V 5 7V 0 0 0.5 1 1.5 2 2.5 0 3 0 5 10 15 Fig. 3. Output Characteristics @ TJ = 150ºC 50 35 11V 30 25 10V 20 9V 15 10 8V 5 7V 5V I C = 48A 1.6 1.4 1.2 I C = 24A 1.0 0.8 0 0.5 1 1.5 2 2.5 3 I C = 12A 0.6 -50 3.5 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 30 VGE = 15V 1.8 VCE(sat) - Normalized 40 0 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 14V 13V 12V 45 I C - Amperes 20 VCE - Volts VCE - Volts Fig. 6. Input Admittance 60 TJ = 25ºC 7 50 40 I C - Amperes VCE - Volts 6 5 4 I C = 48A 30 TJ = 150ºC 25ºC 20 3 - 40ºC 24A 10 12A 2 0 1 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 12 IXXH30N60B3 Fig. 7. Transconductance 22 Fig. 8. Gate Charge 16 20 TJ = - 40ºC VCE = 300V 14 I C = 24A 16 25ºC 12 14 150ºC 10 V GE - Volts g f s - Siemens 18 12 10 8 6 I G = 10mA 8 6 4 4 2 2 0 0 0 10 20 30 40 50 0 60 5 10 I C - Amperes Fig. 9. Capacitance 10,000 15 20 25 30 35 40 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area 55 50 f = 1 MHz 40 1,000 I C - Amperes Capacitance - PicoFarads 45 Cies Coes 100 35 30 25 20 15 Cres TJ = 150ºC 10 RG = 10Ω dv / dt < 10V / ns 5 0 10 0 5 10 15 20 25 30 35 100 40 200 300 Fig. 11. Forward-Bias Safe Operating Area 1000 400 500 600 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance 1 VCE(sat) Limit 25µs 10 100µs 1 Z(th)JC - ºC / W I D - Amperes 100 0.01 1ms TJ = 175ºC TC = 25ºC Single Pulse DC 10ms 0.1 1 0.1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXH30N60B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Eoff 1.8 4.5 --- 1.2 Eoff 4.0 TJ = 150ºC , VGE = 15V 2.5 1.0 2.0 0.8 1.5 1.5 0.6 1.0 TJ = 25ºC 0.4 I C = 24A 0.6 0.8 0.5 1.0 0.4 0.2 0.5 10 20 30 40 50 60 70 0.0 10 80 15 20 25 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 1.4 Eoff Eon tfi ---2.5 0.6 1.0 t f i - Nanoseconds 1.5 - MilliJoules Eoff - MilliJoules on 0.8 I C = 24A 0.4 0.2 100 180 200 I C = 24A 160 150 I C = 48A 100 50 10 20 30 40 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi tfi td(off) - - - 160 180 140 160 140 100 TJ = 25ºC 40 I C - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 45 50 110 I C = 24A 140 100 120 90 I C = 48A 60 80 70 40 60 60 35 120 RG = 10Ω, VGE = 15V 80 80 30 130 td(off) - - - - 100 100 20 t f i - Nanoseconds 120 25 80 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 180 t d(off) - Nanoseconds TJ = 150ºC 20 70 VCE = 400V VCE = 400V 220 15 60 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 200 180 RG = 10Ω, VGE = 15V 10 50 RG - Ohms TJ - Degrees Centigrade 260 250 120 0.0 150 125 300 td(off) - - - - 140 0.5 300 50 t d(off) - Nanoseconds 2.0 E 1.0 75 45 VCE = 400V I C = 48A 50 40 TJ = 150ºC, VGE = 15V 200 VCE = 400V 25 35 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 220 3.0 RG = 10ΩVGE = 15V 1.2 30 I C - Amperes RG - Ohms t f i - Nanoseconds Eon - MilliJoules 1.2 2.0 TJ = 150ºC E on - MilliJoules 3.0 I C = 48A 2.5 ---- VCE = 400V 3.5 1.4 Eon RG = 10ΩVGE = 15V 1.0 VCE = 400V 1.6 E off - MilliJoules Eon - E off - MilliJoules 2.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXXH30N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance tri 140 VCE = 400V 80 80 70 70 60 I C = 24A 80 50 I C = 48A 60 40 40 30 20 20 0 t d(on) - Nanoseconds 100 10 10 20 30 40 50 60 70 tri 26 25 50 24 40 23 I C = 24A 40 22 30 20 20 18 16 15 20 25 30 35 40 45 50 22 20 75 24 28 60 50 TJ = 25ºC, 125ºC 50 10 I C = 48A 25 26 27 VCE = 400V 30 60 100 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 10Ω, VGE = 15V 70 28 VCE = 400V I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 80 td(on) - - - - RG = 10Ω, VGE = 15V 10 80 RG - Ohms 90 tri 30 t d(on) - Nanoseconds 120 t r i - Nanoseconds td(on) - - - - TJ = 150ºC, VGE = 15V 90 t r i - Nanoseconds 160 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 125 21 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_30N60B3D1(4D)05-06-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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