IXXH30N60C3D1

IXXH30N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.4V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 60 30 30 110 A A A A IA EAS TC = 25°C TC = 25°C 20 250 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 48 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms Md Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g Weight Tab E C = Collector Tab = Collector Features  270 C G = Gate E = Emitter   TJ TJM Tstg TL TSOLD G    Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Ultra Fast Diode Avalanche Capability Short Circuit Capability International Standard Package Advantages     High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 150C © 2015 IXYS CORPORATION, All Rights Reserved  V 6.0 V 100 A 1 mA TJ = 150C IGES  100 1.85 2.30 2.40 nA       Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100333C(9/15) IXXH30N60C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 8 IC = 24A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 24A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 24A, VGE = 15V VCE = 400V, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 24A, VGE = 15V VCE = 400V, RG = 10 Note 2 RthJC RthCS TO-247 (IXXH) Outline 14 S 1185 133 25 pF pF pF 37 10 15 nC nC nC 23 33 0.50 77 32 0.27 ns ns mJ ns ns mJ 125 0.45 22 35 1.13 88 78 0.40 ns ns mJ ns ns mJ 0.21 0.55 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 TJ = 150°C 1.6 IRM trr TJ = 100°C IF = 30A, VGE = 0V, -diF/dt = 100A/μs, VR = 100V TJ = 100°C IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 100 25 RthJC Notes: 2.7 V V 4 A ns ns 0.9 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH30N60C3D1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 50 VGE = 15V 14V 13V 45 40 VGE = 15V 100 35 14V 11V I C - Amperes I C - Amperes 120 12V 30 25 10V 20 80 13V 12V 60 11V 40 15 9V 10 10V 20 5 9V 8V 6V 0 0 0.5 1 1.5 2 2.5 3 7V 0 3.5 0 5 10 15 2.0 50 VGE = 15V 14V 13V 12V VGE = 15V 1.8 VCE(sat) - Normalized I C = 48A 35 I C - Amperes 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 40 25 VCE - Volts VCE - Volts 45 20 11V 30 25 10V 20 9V 15 1.6 1.4 I C = 24A 1.2 1.0 8V 10 0.8 5 7V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 I C = 12A 0.6 -50 4 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 50 75 100 125 150 175 11 12 TJ - Degrees Centigrade Fig. 6. Input Admittance 50 TJ = 25ºC 7 40 I C - Amperes VCE - Volts 6 5 4 I C = 48A 3 30 20 TJ = 150ºC 25ºC 24A 2 - 40ºC 10 12A 1 0 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 IXXH30N60C3D1 Fig. 7. Transconductance 22 Fig. 8. Gate Charge 16 20 TJ = - 40ºC VCE = 300V 14 I C = 24A 18 14 150ºC V GE - Volts g f s - Siemens 12 25ºC 16 I G = 10mA 12 10 8 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0 55 5 10 I C - Amperes 15 20 25 30 35 40 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 55 10,000 50 f = 1 MHz Capacitance - PicoFarads 45 Cies 40 I C - Amperes 1,000 Coes 100 35 30 25 20 15 Cres TJ = 150ºC 10 RG = 10Ω dv / dt < 10V / ns 5 0 10 0 5 10 15 20 25 30 35 100 40 200 300 Fig. 11. Forward-Bias Safe Operating Area 1000 400 500 600 VCE - Volts VCE - Volts 1 Fig. 12. Maximum Transient Thermal Impedance I D - Amperes 100 25µs 10 100µs Z (th)JC - ºC / W VCE(sat) Limit 0.1 0.01 1 1ms TJ = 175ºC TC = 25ºC Single Pulse DC 0.1 1 10 100 10ms 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXH30N60C3D1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 1.0 Eon - --- 4.0 TJ = 150ºC , VGE = 15V I C = 48A VCE = 400V 0.8 0.6 2.5 0.5 2.0 I C = 24A ---- RG = 10ΩVGE = 15V 2.0 TJ = 150ºC 0.5 1.6 0.4 1.2 TJ = 25ºC 0.3 0.8 1.5 0.2 0.3 0.4 1.0 0.2 0.1 0.5 10 20 30 40 50 60 70 20 24 32 36 40 44 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance Eoff Eon 270 tfi 100 3.0 td(off) - - - - on - MilliJoules 2.0 I C = 48A t f i - Nanoseconds E 0.5 90 80 70 1.5 0.3 1.0 60 0.5 50 0.0 150 40 I C = 24A 0.1 50 75 100 125 180 I C = 24A 0.4 0.2 210 150 90 60 10 20 30 40 140 td(off) - - - 110 60 80 40 70 80 40 70 I C = 24A 60 60 0 50 30 I C = 48A 60 20 TJ = 25ºC 25 t f i - Nanoseconds 90 TJ = 150ºC 90 VCE = 400V 35 40 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 45 50 0 25 50 75 100 TJ - Degrees Centigrade 125 50 150 t d(off) - Nanoseconds 100 t d(off) - Nanoseconds 100 td(off) - - - - RG = 10Ω, VGE = 15V 80 VCE = 400V 20 80 100 tfi RG = 10Ω, VGE = 15V 20 70 100 120 80 60 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 50 RG - Ohms TJ - Degrees Centigrade 120 120 I C = 48A t d(off) - Nanoseconds 2.5 15 240 TJ = 150ºC, VGE = 15V VCE = 400V 0.6 25 48 110 ---- RG = 10ΩVGE = 15V 10 28 I C - Amperes VCE = 400V Eoff - MilliJoules 16 RG - Ohms 3.5 0.7 0.0 12 80 0.8 t f i - Nanoseconds E on - MilliJoules 0.6 E on - MilliJoules 3.0 Eon VCE = 400V 3.5 0.7 0.4 2.4 Eoff E off - MilliJoules 0.9 E off - MilliJoules 0.7 4.5 Eoff IXXH30N60C3D1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 I C = 48A VCE = 400V 80 70 70 60 80 50 I C = 24A 60 40 40 30 20 0 10 20 30 40 50 60 70 t d(on) - Nanoseconds 100 td(on) - - - - 24 40 10 16 10 27 70 26 60 25 I C = 48A 50 24 40 23 30 I C = 24A 20 22 21 10 100 125 22 TJ = 150ºC 10 80 t d(on) - Nanoseconds t r i - Nanoseconds 50 18 28 VCE = 400V 75 26 TJ = 25ºC 20 RG = 10Ω, VGE = 15V 50 60 20 29 25 28 VCE = 400V 15 20 25 30 35 I C - Amperes 100 80 td(on) - - - - 20 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 90 tri RG = 10Ω, VGE = 15V 30 RG - Ohms tri 30 20 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 40 45 50 t d(on) - Nanoseconds 120 t r i - Nanoseconds td(on) - - - - TJ = 150ºC, VGE = 15V 80 t r i - Nanoseconds tri 140 90 IXXH30N60C3D1 1000 60 A 50 IF 30 TVJ = 100°C VR = 300V nC 800 Qr 30 15 400 20 10 TVJ = 25°C 200 10 0 IF= 60A IF= 30A IF= 15A 20 IF= 60A IF= 30A IF= 15A 600 TVJ =100°C 25 IRM 40 TVJ =150°C TVJ= 100°C VR = 300V A 0 1 2 5 0 100 3 V A/s 1000 -diF/dt VF 90 2.0 trr Kf 400 600 A/s 800 1000 -diF/dt 1.00 TVJ = 100°C IF = 30A V V FR 15 IF = 60A IF = 30A IF = 15A 80 200 20 TVJ = 100°C VR = 300V ns 0 Fig. 24. Peak Reverse Current IRM Versus -diF/dt Fig. 23. Reverse Recovery Charge Qr Versus -diF/dt Fig. 22. Forward Current IF Versus VF 1.5 0 s tfr 0.75 tfr VFR 1.0 10 0.50 5 0.25 IRM 0.0 70 Qr 0.5 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/s 1000 0 0 200 400 -diF/dt Fig. 25. Dynamic Parameters Qr, IRM Versus TVJ Fig. 26. Recovery Time trr Versus -diF/dt 0.00 600 A/s 800 1000 diF/dt Fig. 28. Peak Forward Voltage VFR and tfr Versus diF/dt 1 K/W Constants for ZthJC calculation: i 0.1 1 2 3 Z thJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 28. Transient Thermal Resistance Junction to Case © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_30N60C3D1(4D)05-06-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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