IXXH40N65B4H1

IXXH40N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 40A 2.0V 40ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 123 40 40 225 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 80 @V CE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 µs PC TC = 25°C 455 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features  TJ TJM Tstg TL G      Optimized for 5-30kHz Switching Square RBSOA Anti-Parallel Sonic Diode Avalanche Rated Short Circuit Capability International Standard Package Advantages Mounting Torque 1.13/10 Nm/lb.in 6 g Weight    High Power Density Extremely Rugged Low Gate Drive Requirement Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC  = 40A, VGE = 15V, Note 1 TJ = 150C © 2021 Littelfuse, Inc.  V 6.5 V 25 A 3 mA TJ = 150C IGES  100 1.60 1.87 2.00     Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts nA V V DS100544D(01/21) IXXH40N65B4H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 14 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 40A, VGE = 15V VCE = 400V, RG = 5 Note 2 RthJC RthCS 23 S 2110 200 33 pF pF pF 66 16 27 nC nC nC 19 48 1.40 112 40 0.75 ns ns mJ ns ns mJ 17 44 2.20 134 73 1.40 ns ns mJ ns ns mJ 0.21 0.33 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 IRM trr IF = 30A, VGE = 0V, TJ = 150°C -diF/dt = 500A/µs, VR = 300V Characteristic Values Min. Typ. Max. 2.5 TJ = 150°C 2.15 V V 25 120 A ns RthJC Notes: 0.60 °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH40N65B4H1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 200 V GE = 15V 13V 12V 70 V GE = 15V 180 11V 160 60 14V 50 IC - Amperes IC - Amperes 140 10V 40 30 9V 20 8V 10 0 0.5 1 1.5 2 2.5 12V 100 80 11V 60 10V 40 9V 20 7V 0 13V 120 8V 0 3 7V 0 5 10 20 25 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 80 2.0 VGE = 15V 14V 13V 70 V GE = 15V 12V 60 1.8 11V VCE(sat) - Normalized I C - Amperes 15 50 10V 40 30 9V 20 I C = 80A 1.6 1.4 1.2 I C = 40A 1.0 8V 0.8 10 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 I C = 20A 0.6 4 -50 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 250 TJ = 25ºC 4.5 200 TJ = - 40ºC 25ºC 3.5 IC - Amperes VCE - Volts 4.0 I C = 80A 3.0 40A 20A 2.5 TJ = 150ºC 150 100 2.0 50 1.5 1.0 0 7 8 9 10 11 VGE - Volts © 2021 Littelfuse, Inc. 12 13 14 15 4 6 8 10 12 VGE - Volts 14 16 18 20 IXXH40N65B4H1 Fig. 8. Gate Charge Fig. 7. Transconductance 35 16 TJ = - 40ºC 30 12 25 25ºC VGE - Volts g f s - Siemens VCE = 325V I C = 40A I G = 10mA 14 20 150ºC 15 10 10 8 6 4 5 2 0 0 0 20 40 60 80 100 120 140 160 180 0 10 20 I C - Amperes 40 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 90 f = 1 MHz 80 Cies 70 1,000 60 IC - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs C oes 100 50 40 30 TJ = 150ºC RG = 10Ω dv / dt < 10V / ns 20 10 Cres 10 0 5 10 15 20 25 30 35 40 0 100 200 300 VCE - Volts 400 500 600 700 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 IXXH40N65B4H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff Eon TJ = 150ºC , VGE = 15V VCE = 400V 4.5 4.0 16 3.5 14 3.0 12 8 2.5 6 Eoff - MilliJoules Eoff - MilliJoules 3.0 6 5 TJ = 150ºC 2.0 1.5 3 TJ = 25ºC 1.0 2.0 4 I C = 40A 1.5 10 15 20 25 30 35 40 45 50 60 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance TJ = 150ºC, VGE = 15V VCE = 400V 120 2.0 4 1.5 3 1.0 2 t f i - Nanoseconds 5 I C = 40A 100 125 100 400 I C = 80A 80 I C = 40A 60 0 5 150 10 15 20 25 30 35 40 45 50 55 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 120 200 tf i 200 100 TJ - Degrees Centigrade 120 300 20 0 75 500 40 1 0.0 td(off) t d(off) - Nanoseconds I C = 80A 50 600 tfi 6 2.5 80 140 7 0.5 t d(off) 180 tfi 180 RG = 5Ω , VGE = 15V VCE = 400V td(off) RG = 5Ω , VGE = 15V VCE = 400V 100 160 160 140 60 120 40 100 TJ = 25ºC I C = 80A 80 60 140 120 I C = 40A 40 20 100 80 0 60 20 30 40 50 I C - Amperes © 2021 Littelfuse, Inc. 60 70 80 I C = 80A 20 25 50 75 100 T J - Degrees Centigrade 125 80 150 t d(off) - Nanoseconds 80 t d(off) - Nanoseconds TJ = 150ºC t f i - Nanoseconds 100 t f i - Nanoseconds 50 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon - MilliJoules Eoff - MilliJoules 40 I C - Amperes 8 25 30 RG - Ohms Eoff Eon RG = 5Ω ,VGE = 15V VCE = 400V 3.0 0 20 55 4.0 3.5 1 0.0 0 5 2 0.5 2 1.0 4 Eon - MilliJoules Eon - MilliJoules 10 Eoff Eon RG = 5Ω , VGE = 15V VCE = 400V 2.5 I C = 80A 3.5 7 IXXH40N65B4H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 280 td(on) 80 120 60 I C = 40A 18 40 16 14 20 0 0 30 35 40 45 50 12 20 55 20 TJ = 150ºC 60 20 25 22 80 40 20 24 100 40 15 26 TJ = 25ºC 80 0 td(on) t d(on) - Nanoseconds I C = 80A 160 t d(on) - Nanoseconds 100 10 tri RG = 5Ω , VGE = 15V VCE = 400V 120 200 5 28 140 120 TJ = 150ºC, VGE = 15V VCE = 400V t r i - Nanoseconds tri 240 t r i - Nanoseconds 160 140 30 40 RG - Ohms 50 60 70 80 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 180 28 tri 160 140 26 24 120 22 I C = 80A 100 20 80 18 60 16 I C = 40A 40 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 5Ω , VGE = 15V VCE = 400V 14 20 12 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 21. Maximum Transient Thermal Impedance (Diode) Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXX_40N65B4 (E5-RZ43) 1-7-21 IXXH40N65B4H1 Fig. 23. Reverse Recovery Charge QRR vs. -diF/dt Fig. 22. Forward Current vs. Forward Voltage 2.4 100 TVJ = 150ºC 2.2 80 I F = 50A VR = 300V TVJ = 25ºC 2 QRR - MicroCoulombs I F - Amperes 150ºC 60 40 1.8 30A 1.6 1.4 1.2 10A 20 1 0 0 0.5 1 1.5 2 2.5 3 3.5 0.8 4 400 600 800 1200 1400 1600 1800 2000 Fig. 25. Recover Time tRR vs. -diF/dt Fig. 24. Peak Reverse Current IRM vs. -diF/dt 140 70 TVJ = 150ºC TVJ = 150ºC 120 I F = 50A VR = 300V tRR - Nanaseconds 60 IRR - Amperes 1000 -diF /dt - A/µs VF - Volts 30A 50 10A 40 30 VR = 300V 100 80 I F = 50A 60 30A 10A 40 20 20 10 400 600 800 1000 1200 1400 1600 1800 400 2000 600 800 1000 1200 1400 1600 1800 2000 -diF/dt - A/µs -diF/dt - A/µs Fig. 27. Dynamic Parameters QRR, IRM vs. Virtual Junction Temperature TVJ Fig. 26. Recovery Energy EREC vs. -diF/dt 1.20 500 VR = 300V TVJ = 150ºC 450 VR = 300V I F =50A IF = 50A 1.00 -dIF/dt = 900A/µs 350 0.80 30A KF IRM KF EREC - MicroJoules 400 300 0.60 250 10A 200 0.40 KF QRR 150 0.20 100 400 600 800 1000 1200 -diF/dt - A/µs © 2021 Littelfuse, Inc. 1400 1600 1800 2000 0 20 40 60 80 100 TVJ - Degrees Centigrade 120 140 160 IXXH40N65B4H1 TO-247 Outline D A A2 A B E Q S R 0P D2 D1 D 0P1 1 2 4 3 L1 C E1 L A1 C b b2 b4 e 1 - Gate 2,4 - Collector 3 - Emitter Littelfuse reserves the right to change limits, test conditions, and dimensions. IXXH40N65B4H1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc.