IXXH50N60B3D1

IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 120 50 30 200 A A A A IA EAS TC = 25°C TC = 25°C 25 200 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 100 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 22, Non Repetitive 10 μs PC TC = 25°C = 25°C( Chip Capability) = 110°C = 110°C = 25°C, 1ms Md Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Weight Tab E C = Collector Tab = Collector Features  600 C G = Gate E = Emitter   TJ TJM Tstg TL TSOLD G    Optimized for 5-30kHz Switching Square RBSOA Anti-Parallel Ultra Fast Diode Avalanche Capability Short Circuit Capability International Standard Package Advantages     High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 150C © 2013 IXYS CORPORATION, All Rights Reserved  V 6.0 V 25 A 3 mA TJ = 150C IGES  100 1.55 1.80 1.80 nA       Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100302B(8/13) IXXH50N60B3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 12 IC = 36A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 36A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 36A, VGE = 15V VCE = 360V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 36A, VGE = 15V VCE = 360V, RG = 5 Note 2 RthJC RthCS TO-247 (IXXH) Outline 19 S 2230 195 44 pF pF pF 70 16 29 nC nC nC 27 40 0.67 100 135 0.74 ns ns mJ ns ns mJ 150 1.20 30 45 1.40 130 190 1.20 ns ns mJ ns ns mJ 0.21 0.25 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 TJ = 150°C 1.6 IRM trr TJ = 100°C IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 100V IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 100 25 RthJC Notes: 2.7 V V 4 A ns ns 0.9 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH50N60B3D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 200 VGE = 15V 14V 13V 70 160 12V 14V 140 50 IC - Amperes IC - Amperes 60 VGE = 15V 180 11V 40 30 10V 120 13V 100 12V 80 60 20 9V 10 0 0.5 1 1.5 2 2.5 10V 9V 20 8V 7V 0 11V 40 7V 0 3 0 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.0 VGE = 15V 14V 13V IC - Amperes 60 VGE = 15V 1.8 12V 50 VCE(sat) - Normalized 70 11V 40 10V 30 20 9V 10 8V 0 7V 6V 0 0.5 1 1.5 2 2.5 3 1.2 C = 36A I C = 18A 0.6 -50 -25 0 25 50 75 100 125 150 175 11 12 13 TJ - Degrees Centigrade Fig. 6. Input Admittance 100 90 TJ = 25ºC 5.5 5.0 80 4.5 70 I C IC - Amperes VCE - Volts I 1.0 3.5 6.0 = 72A 36A 18A 3.0 = 72A 0.8 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.5 C 1.4 VCE - Volts 4.0 I 1.6 60 50 40 2.5 30 2.0 20 1.5 10 TJ = 150ºC 25ºC - 40ºC 0 1.0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 IXXH50N60B3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 32 14 24 12 20 10 VGE - Volts g f s - Siemens TJ = - 40ºC, 25ºC, 150ºC 28 16 12 I C = 36A I G = 10mA 8 6 8 4 4 2 0 VCE = 300V 0 0 10 20 30 40 50 60 70 80 90 0 10 20 IC - Amperes 40 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 110 10,000 f = 1 MHz 100 Cies 90 80 1,000 IC - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs Coes 100 70 60 50 40 30 TJ = 150ºC 20 Cres 10 0 100 10 0 5 10 15 20 25 RG = 5Ω dv / dt < 10V / ns 30 35 40 VCE - Volts 200 300 400 500 Fig. 11. Maximum Transient Thermal Impedance 600 VCE - Volts 1 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1,000 0.4 a a sss VCE(sat) Limit 25µs 10 100µs 1 Z(th)JC - ºC / W ID - Amperes 100 1ms TJ = 175ºC TC = 25ºC Single Pulse 10ms DC 0 1 0.1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXH50N60B3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3.0 6 Eoff 1.8 --- TJ = 150ºC , VGE = 15V 2.5 4 1.5 3 C ---TJ = 150ºC 4 VCE = 360V = 36A 1.2 3 1.0 0.8 2 TJ = 25ºC 0.6 0.4 2 Eon - MilliJoules I C = 72A I 5 1.4 2.0 1.0 Eon RG = 5ΩVGE = 15V 1.6 5 VCE = 360V Eon - MilliJoules Eoff - MilliJoules Eon - 2.0 Eoff - MilliJoules Eoff Fig. 14. Inductive Switching Energy Loss vs. Collector Current 1 0.2 0.5 0.0 1 5 10 15 20 25 30 35 40 45 0 15 50 20 25 30 35 40 RG - Ohms Eoff 2.0 Eon 4.5 ---- 220 2.5 1.2 2.0 1.0 1.5 I C = 36A 0.8 1.0 0.6 0.5 0.4 100 t f i - Nanoseconds E off - MilliJoules 1.4 200 250 I 180 C = 36A 150 I C = 72A 140 100 120 50 0 5 10 15 20 25 td(off) - - - - RG = 5Ω, VGE = 15V 220 180 200 160 180 140 150 120 TJ = 25ºC 80 40 60 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 70 75 110 80 60 65 I C = 36A 90 60 60 120 120 100 55 130 100 80 50 140 140 90 45 td(off) - - - - VCE = 360V 160 100 30 150 tfi 180 120 40 50 RG = 5Ω, VGE = 15V t d(off) - Nanoseconds t f i - Nanoseconds 200 210 35 45 I 25 C = 72A 70 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds VCE = 360V 30 40 240 t f i - Nanoseconds tfi 25 35 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 220 20 30 RG - Ohms 300 15 200 160 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 240 300 TJ = 150ºC, VGE = 15V 100 0.0 150 125 td(off) - - - - TJ - Degrees Centigrade TJ = 150ºC 75 t d(off) - Nanoseconds 3.0 E on - MilliJoules 1.6 270 70 VCE = 360V I C = 72A 75 65 350 tfi 3.5 50 60 240 4.0 VCE = 360V 25 55 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance RG = 5ΩVGE = 15V 1.8 50 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 2.2 45 IXXH50N60B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 240 tri 200 120 160 td(on) - - - - 60 I C = 72A 80 40 40 20 0 10 15 20 25 30 35 40 45 tri 32 TJ = 150ºC 60 29 40 26 TJ = 25ºC 23 20 15 20 25 30 35 40 45 50 55 60 65 70 75 44 41 VCE = 360V 38 120 35 I C = 72A 100 32 80 29 60 80 26 I C = 36A 40 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 5Ω, VGE = 15V 140 35 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 100 0 50 RG - Ohms 180 38 20 0 5 41 VCE = 360V 120 t r i - Nanoseconds t r i - Nanoseconds 120 td(on) - - - - t d(on) - Nanoseconds I C = 36A t d(on) - Nanoseconds 80 44 RG = 5Ω, VGE = 15V VCE = 360V 160 tri 140 100 TJ = 150ºC, VGE = 15V Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 23 20 25 50 75 100 125 20 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_50N60B3D1(5D) 8-13-13-A IXXH50N60B3D1 1000 60 A 50 IF 30 TVJ = 100°C VR = 300V nC 800 Qr 30 15 400 20 10 TVJ = 25°C 200 10 0 IF= 60A IF= 30A IF= 15A 20 IF= 60A IF= 30A IF= 15A 600 TVJ =100°C 25 IRM 40 TVJ =150°C TVJ= 100°C VR = 300V A 0 1 2 5 0 100 3 V A/s 1000 -diF/dt VF 90 2.0 trr Kf 400 600 A/s 800 1000 -diF/dt 1.00 TVJ = 100°C IF = 30A V V FR 15 IF = 60A IF = 30A IF = 15A 80 200 20 TVJ = 100°C VR = 300V ns 0 Fig. 24. Peak Reverse Current IRM Versus -diF/dt Fig. 23. Reverse Recovery Charge Qr Versus -diF/dt Fig. 22. Forward Current IF Versus VF 1.5 0 s tfr 0.75 tfr VFR 1.0 10 0.50 5 0.25 IRM 0.0 70 Qr 0.5 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/s 1000 0 0 200 -diF/dt Fig. 25. Dynamic Parameters Qr, IRM Versus TVJ Fig. 26. Recovery Time trr Versus -diF/dt 0.00 600 A/s 800 1000 diF/dt Fig. 27. Peak Forward Voltage VFR and tfr Versus diF/dt 1 K/W Constants for ZthJC calculation: i 0.1 1 2 3 Z thJC 0.01 0.001 0.00001 400 DSEP 29-06 0.0001 0.001 0.01 Fig. 28. Transient Thermal Resistance Junction to Case © 2013 IXYS CORPORATION, All Rights Reserved 0.1 t s 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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