IXXH50N60C3D1

Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 100 50 30 200 A A A A IA EAS TC = 25°C TC = 25°C 25 200 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load ICM = 100 @ ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repetitive 10 μs PC TC = 25°C 600 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C z 1.13/10 Nm/lb.in. z 6 g = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features z z z z z TJ TJM Tstg TL TSOLD G z Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Ultra Fast Diode Avalanche Capability Short Circuit Capability International Standard Package Advantages z z High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE= 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE= 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved z V 5.5 V 25 μA 3 mA TJ = 150°C IGES z 1.95 2.45 ±100 nA 2.30 V V z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100274A(01/13) IXXH50N60C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 36A, VCE = 10V, Note 1 11 VCE = 25V, VGE = 0V, f = 1MHz IC = 36A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 36A, VGE = 15V VCE = 360V, RG = 5Ω Note 2 Inductive load, TJ = 150°C IC = 36A, VGE = 15V VCE = 360V, RG = 5Ω Note 2 RthJC RthCS TO-247 (IXXH) Outline 18 S 2320 138 42 pF pF pF 64 nC 18 nC 25 nC 24 40 0.72 62 42 0.33 ns ns mJ ns ns mJ 100 0.55 25 44 1.46 80 90 0.48 ns ns mJ ns ns mJ 0.21 0.25 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 TJ = 150°C 1.6 IRM trr TJ = 100°C IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 100V IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 100 25 RthJC Notes: 2.7 V V 4 A ns ns 0.9 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH50N60C3D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 55 160 VGE = 15V 14V 13V 50 45 VGE = 15V 140 12V 35 11V 30 25 10V 20 14V 120 IC - Amperes IC - Amperes 40 13V 100 80 12V 60 11V 15 40 9V 10 5 10V 20 8V 6V 0 0 0.5 1 1.5 2 2.5 9V 7V 0 3 0 5 10 15 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 1.8 55 VGE = 15V 14V 13V 45 VGE = 15V 12V 40 1.6 VCE(sat) - Normalized 50 IC - Amperes 25 VCE - Volts VCE - Volts 11V 35 30 10V 25 20 9V 15 10 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 I I 1.0 I -50 = 18A -25 0 25 50 75 100 125 150 175 12 13 Fig. 6. Input Admittance 90 80 4.5 70 IC - Amperes 5.0 = 54A 3.5 3.0 36A 2.0 C 100 TJ = 25ºC 5.5 2.5 = 36A TJ - Degrees Centigrade 6.0 C C 0.6 4 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I = 54A 1.2 VCE - Volts 4.0 C 1.4 0.8 8V 5 VCE - Volts 20 60 50 40 TJ = 150ºC 25ºC 30 - 40ºC 20 18A 10 1.5 0 1.0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 11 IXXH50N60C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 32 16 VCE = 300V 14 TJ = - 40ºC, 25ºC, 150ºC 24 12 20 10 VGE - Volts g f s - Siemens 28 16 12 8 6 8 4 4 2 0 I C = 36A I G = 10mA 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 40 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 110 10,000 f = 1 MHz 100 Cies 90 80 1,000 IC - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs IC - Amperes Coes 100 70 60 50 40 30 TJ = 150ºC 20 Cres 10 0 100 10 0 5 10 15 20 25 RG = 5Ω dv / dt < 10V / ns 30 35 40 VCE - Volts 200 300 400 500 Fig. 11. Maximum Transient Thermal Impedance 600 VCE - Volts 1 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 0.4 a a sss VCE(sat) Limit 25µs 10 100µs Z(th)JC - ºC / W ID - Amperes 100 0.1 1ms 1 10ms TJ = 175ºC DC TC = 25ºC Single Pulse 0.1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXH50N60C3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Collector Current 1.2 0.7 5.5 Eon - Eoff --- Eoff 5.0 TJ = 150ºC , VGE = 15V 1.0 I C = 54A VCE = 360V 4.5 0.6 2.5 I C = 36A 2.0 0.4 Eoff - MilliJoules 3.0 TJ = 150ºC 2.5 1.5 0.5 2.0 0.4 1.5 TJ = 25ºC 0.3 1.0 0.2 Eon - MilliJoules 3.5 ---- VCE = 360V Eon - MilliJoules 0.8 Eon RG = 5Ω , VGE = 15V 0.6 4.0 Eoff - MilliJoules 3.0 0.5 1.0 0.2 0.1 0.5 5 10 15 20 25 30 35 40 45 0.0 18 50 22 26 30 RG - Ohms 0.9 ---- VCE = 360V 120 3.0 110 2.6 2.2 I C = 54A 0.5 1.8 0.4 1.4 I C = 36A 0.1 50 75 100 125 tfi 0.2 150 50 250 I 150 50 0 10 15 20 25 30 35 40 45 50 80 80 60 70 40 60 TJ = 25ºC 0 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 46 50 54 85 80 VCE = 360V I C = 36A 90 75 80 70 70 65 60 60 I 50 C = 54A 55 40 50 50 30 45 40 20 25 50 75 100 TJ - Degrees Centigrade 125 40 150 t d(off) - Nanoseconds 100 td(off) - - - - RG = 5Ω , VGE = 15V 100 90 42 90 tfi 110 110 TJ = 150ºC 38 100 120 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - 100 34 C = 54A Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 360V 30 200 = 36A I 5 t f i - Nanoseconds tfi 26 C RG - Ohms RG = 5Ω , VGE = 15V 22 300 80 60 120 18 350 td(off) - - - - 90 0.6 160 20 54 VCE = 360V 100 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 120 50 TJ = 150ºC, VGE = 15V TJ - Degrees Centigrade 140 46 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 70 1.0 0.2 25 E on - MilliJoules 0.6 0.3 42 t d(off) - Nanoseconds 0.7 E off - MilliJoules Eon RG = 5Ω , VGE = 15V 3.4 t f i - Nanoseconds Eoff 38 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 0.8 34 IXXH50N60C3D1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 90 110 tri 120 TJ = 150ºC, VGE = 15V td(on) - - - - 100 80 100 70 90 60 80 I C 50 = 36A 70 40 60 30 I 50 C = 54A 70 10 15 20 25 30 35 40 45 32 td(on) - - - 30 RG = 5Ω , VGE = 15V 90 I C = 54A 70 28 26 I C = 36A 50 30 24 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 360V 22 10 50 75 26 TJ = 150ºC 40 25 30 24 TJ = 25ºC 100 125 23 22 21 22 26 30 34 38 IC - Amperes 130 25 50 18 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature tri 27 0 50 RG - Ohms 110 60 10 0 5 28 VCE = 360V 20 10 30 29 RG = 5Ω , VGE = 15V 20 40 td(on) - - - - 20 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 42 46 50 54 t d(on) - Nanoseconds VCE = 360V 110 30 tri 80 90 t r i - Nanoseconds 130 t d(on) - Nanoseconds t r i - Nanoseconds 140 IXXH50N60C3D1 1000 60 A 50 IF 30 TVJ = 100°C VR = 300V nC 800 Qr 30 15 400 20 10 TVJ = 25°C 200 10 0 IF= 60A IF= 30A IF= 15A 20 IF= 60A IF= 30A IF= 15A 600 TVJ =100°C 25 IRM 40 TVJ =150°C TVJ= 100°C VR = 300V A 0 1 2 5 0 100 3 V A/μs 1000 -diF/dt VF 90 2.0 trr Kf 400 600 A/μs 800 1000 -diF/dt 1.00 TVJ = 100°C IF = 30A V V FR 15 IF = 60A IF = 30A IF = 15A 80 200 20 TVJ = 100°C VR = 300V ns 0 Fig. 24. Peak Reverse Current IRM Versus -diF/dt Fig. 23. Reverse Recovery Charge Qr Versus -diF/dt Fig. 22. Forward Current IF Versus VF 1.5 0 μs tfr 0.75 tfr VFR 1.0 10 0.50 5 0.25 IRM 0.0 70 Qr 0.5 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 0 0 200 400 -diF/dt Fig. 25. Dynamic Parameters Qr, IRM Versus TVJ Fig. 26. Recovery Time trr Versus -diF/dt 0.00 600 A/μs 800 1000 diF/dt Fig. 27. Peak Forward Voltage VFR and tfr Versus diF/dt 1 K/W Constants for ZthJC calculation: i 0.1 1 2 3 Z thJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 28. Transient Thermal Resistance Junction to Case © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_50N60C3(5D)5-20-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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