IXXH60N65B4

IXXH60N65B4 XPTTM 650V IGBT GenX4TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 60A 2.2V 43ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 145 60 265 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 120 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC Maximum Ratings TJ TJM Tstg Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight 536 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features  TC = 25°C TL TSOLD G    Optimized for 5-30kHz Switching Square RBSOA Short Circuit Capability International Standard Package Advantages    High Power Density Extremely Rugged Low Gate Drive Requirement Applications    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V 6.5 V    5 A 250 A IGES VCE = 0V, VGE = 20V 100 VCE(sat) IC 1.8 2.1 © 2016 IXYS CORPORATION, All Rights Reserved  V TJ = 150C = 60A, VGE = 15V, Note 1 TJ = 150C  Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 2.2 nA V V DS100495C(9/16) IXXH60N65B4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 17 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 60A, VCE = 10V, Note 1 2590 133 40 VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 5 Note 2 RthJC RthCS Notes: 28 TO-247 (IXXH) Outline S D A A2 Q pF pF pF 86 22 35 nC nC nC 19 80 3.2 107 43 1.1 ns ns mJ ns ns mJ 20 74 4.2 120 88 1.8 ns ns mJ ns ns mJ 0.21 0.28 °C/W °C/W B E R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH60N65B4 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 240 VGE = 15V 14V 13V 100 12V VGE = 15V 200 14V 80 160 I C - Amperes I C - Amperes 11V 10V 60 40 9V 8V 20 13V 12V 120 11V 80 10V 9V 40 8V 7V 0 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 2.0 120 13V VGE = 15V 14V 80 11V 60 10V 40 9V 20 VGE = 15V 1.8 12V V CE(sat) - Normalized I C - Amperes 20 VCE - Volts VCE - Volts 100 15 I C = 120A 1.6 1.4 1.2 I C = 60A 1.0 0.8 8V I C = 30A 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.6 4.5 -50 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 75 100 125 150 175 Fig. 6. Input Admittance 100 90 TJ = 25ºC 6 TJ = - 40ºC 25ºC 80 TJ = 150ºC 70 I C - Amperes 5 VCE - Volts 50 TJ - Degrees Centigrade 4 I C = 120A 3 60 50 40 30 60A 20 2 30A 10 1 0 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 12 IXXH60N65B4 Fig. 8. Gate Charge Fig. 7. Transconductance 40 16 14 30 12 25ºC 25 V GE - Volts g f s - Siemens TJ = - 40ºC 35 150ºC 20 15 I C = 60A I G = 10mA 10 8 6 10 4 5 2 0 VCE = 325V 0 0 50 100 150 200 250 300 0 10 20 I C - Amperes 30 40 50 60 70 80 90 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 140 10,000 f = 1 MHz Capacitance - PicoFarads 120 Cies 100 I C - Amperes 1,000 Coes 80 60 100 40 TJ = 150ºC RG = 5Ω dv / dt < 10V / ns 20 Cres 0 10 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXH60N65B4 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.0 Eoff 3.5 Eon 8 4.5 7 4.0 TJ = 150ºC , VGE = 15V VCE = 400V 2.0 4 1.5 3 1.0 I C = 30A 0.5 0.0 5 10 15 20 25 30 35 40 45 50 2.5 5 2.0 4 TJ = 150ºC 1.5 1.0 1 0.5 0 0.0 3 2 1 TJ = 25ºC 0 30 40 50 140 4.5 Eon 1.2 2.0 I C = 30A 1.0 1.5 0.8 1.0 0.6 0.5 0.4 50 75 100 125 t f i - Nanoseconds 2.5 500 80 400 I C = 60A 60 40 200 20 100 0 0.0 150 0 5 10 15 20 30 35 40 45 50 td(off) 200 140 180 120 160 100 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi 55 120 TJ = 25ºC 100 t f i - Nanoseconds 60 200 180 VCE = 400V 160 I C = 30A 80 140 60 120 I C = 60A 40 100 I C = 30A 20 0 30 40 50 60 70 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 80 90 80 20 60 0 80 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 140 TJ = 150ºC t d(off) - Nanoseconds VCE = 400V td(off) RG = 5Ω , VGE = 15V RG = 5Ω , VGE = 15V t f i - Nanoseconds 25 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 80 300 I C = 30A TJ - Degrees Centigrade tfi 600 t d(off) - Nanoseconds 1.4 td(off) VCE = 400V 100 Eon - MilliJoules 3.0 700 TJ = 150ºC, VGE = 15V 3.5 1.6 25 tfi 120 4.0 I C = 60A 40 90 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance VCE = 400V 100 80 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.8 120 70 I C - Amperes RG = 5Ω , VGE = 15V 140 60 RG - Ohms Eoff 2.0 7 VCE = 400V 6 2 5.0 2.2 8 Eon RG = 5Ω , VGE = 15V 3.0 55 2.4 Eoff - MilliJoules Eoff - MilliJoules 5 9 Eon - MilliJoules I C = 60A 2.5 Eoff 3.5 6 Eon - MilliJoules Eoff - MilliJoules 3.0 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXH60N65B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri td(on) tri 80 120 80 40 I C = 30A 40 t r i - Nanoseconds I C = 60A 28 26 VCE = 400V 100 24 80 22 TJ = 150ºC 60 TJ = 25ºC 20 40 18 20 16 t d(on) - Nanoseconds 60 t d(on) - Nanoseconds 120 td(on) RG = 5Ω , VGE = 15V VCE = 400V t r i - Nanoseconds 30 140 TJ = 150ºC, VGE = 15V 160 160 100 20 0 0 5 10 15 20 25 30 35 40 45 50 0 55 14 30 RG - Ohms 40 50 60 70 80 90 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 24 tri 105 td(on) 23 RG = 5Ω , VGE = 15V 22 VCE = 400V 75 21 I C = 60A 60 20 45 19 30 18 t d(on) - Nanoseconds t r i - Nanoseconds 90 I C = 30A 15 17 0 25 50 75 100 125 16 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_60N65B4(E6-RZ43) 9-23-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.