IXXH60N65B4H1

XPTTM 650V IGBT GenX4TM w/ Sonic Diode IXXH60N65B4H1 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 60A 2.2V 43ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 145 60 47 265 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 120 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features   TJ TJM Tstg TL TSOLD G 536 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g    Optimized for 5-30kHz Switching Square RBSOA Anti-Parallel Sonic Diode Short Circuit Capability International Standard Package Advantages    High Power Density Extremely Rugged Low Gate Drive Requirement Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V 6.5   V  25 A 3 mA  IGES VCE = 0V, VGE = 20V 100 VCE(sat) IC 1.8 2.1 © 2016 IXYS CORPORATION, All Rights Reserved  V TJ = 150C = 60A, VGE = 15V, Note 1 TJ = 150C  2.2 Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts nA V V DS100494D(9/16) IXXH60N65B4H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 17 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 60A, VCE = 10V, Note 1 28 S 2590 310 40 VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 5 Note 2 RthJC RthCS TO-247 (IXXH) Outline D A A2 Q pF pF pF 86 22 35 nC nC nC 19 80 3.2 107 43 1.1 ns ns mJ ns ns mJ 20 74 4.2 120 88 1.8 ns ns mJ ns ns mJ 0.21 0.28 °C/W °C/W B E R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 IRM trr IF = 30A, VGE = 0V, -diF/dt = 900A/μs, VR = 300V Characteristic Values Min. Typ. Max. 2.5 TJ = 150°C TJ = 150°C TJ = 150°C 1.5 V V 25 78 A ns RthJC Notes: 0.60 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH60N65B4H1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 240 VGE = 15V 14V 13V 100 12V VGE = 15V 200 14V 80 160 I C - Amperes I C - Amperes 11V 10V 60 40 9V 8V 20 13V 12V 120 11V 80 10V 9V 40 8V 7V 0 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 2.0 120 13V VGE = 15V 14V 80 11V 60 10V 40 9V 20 VGE = 15V 1.8 12V V CE(sat) - Normalized I C - Amperes 20 VCE - Volts VCE - Volts 100 15 I C = 120A 1.6 1.4 1.2 I C = 60A 1.0 0.8 8V I C = 30A 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.6 4.5 -50 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 75 100 125 150 175 Fig. 6. Input Admittance 100 90 TJ = 25ºC 6 TJ = - 40ºC 25ºC 80 TJ = 150ºC 70 I C - Amperes 5 VCE - Volts 50 TJ - Degrees Centigrade 4 I C = 120A 3 60 50 40 30 60A 20 2 30A 10 1 0 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 12 IXXH60N65B4H1 Fig. 8. Gate Charge Fig. 7. Transconductance 40 16 14 30 12 25ºC 25 V GE - Volts g f s - Siemens TJ = - 40ºC 35 150ºC 20 15 I C = 60A I G = 10mA 10 8 6 10 4 5 2 0 VCE = 325V 0 0 50 100 150 200 250 300 0 10 20 I C - Amperes 30 40 50 60 70 80 90 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 140 10,000 f = 1 MHz Capacitance - PicoFarads 120 Cies 100 I C - Amperes 1,000 Coes 80 60 100 40 TJ = 150ºC RG = 5Ω dv / dt < 10V / ns 20 Cres 0 10 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXH60N65B4H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.0 Eoff 3.5 Eon 8 4.5 7 4.0 TJ = 150ºC , VGE = 15V VCE = 400V E off - MilliJoules 5 2.0 4 4 1.5 3 1.0 2 1.0 1 0.5 0 0.0 5 10 15 20 25 30 35 40 45 50 1 TJ = 25ºC 0 40 50 2.0 I C = 30A 1.0 1.5 0.8 1.0 0.6 0.5 0.4 75 100 125 t f i - Nanoseconds 1.2 500 80 400 I C = 60A 60 40 200 20 100 0 0.0 150 0 5 10 15 20 30 35 40 45 50 td(off) 200 140 180 120 160 100 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi 55 120 TJ = 25ºC 100 t f i - Nanoseconds 60 200 180 VCE = 400V 160 I C = 30A 80 140 60 120 I C = 60A 40 100 I C = 30A 20 0 30 40 50 60 70 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 80 90 80 20 60 0 80 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 140 TJ = 150ºC t d(off) - Nanoseconds VCE = 400V td(off) RG = 5Ω , VGE = 15V RG = 5Ω , VGE = 15V t f i - Nanoseconds 25 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 80 300 I C = 30A TJ - Degrees Centigrade tfi 600 t d(off) - Nanoseconds 2.5 td(off) VCE = 400V 100 E on - MilliJoules 1.4 700 TJ = 150ºC, VGE = 15V 3.5 3.0 50 tfi 120 4.0 1.6 25 140 4.5 Eon I C = 60A 40 90 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance VCE = 400V 100 80 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.8 120 70 I C - Amperes RG = 5Ω , VGE = 15V 140 60 RG - Ohms Eoff 2.0 3 2 30 5.0 2.2 TJ = 150ºC 1.5 55 2.4 E off - MilliJoules 2.5 2.0 0.0 7 VCE = 400V 6 5 0.5 8 Eon RG = 5Ω , VGE = 15V 3.0 2.5 I C = 30A 9 E on - MilliJoules I C = 60A Eoff 3.5 6 E on - MilliJoules E off - MilliJoules 3.0 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXH60N65B4H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri td(on) 80 120 I C = 60A 80 40 I C = 30A 40 t r i - Nanoseconds 60 td(on) 28 26 VCE = 400V 100 24 80 22 TJ = 150ºC 60 TJ = 25ºC 20 40 18 20 16 20 0 0 5 10 15 20 25 30 35 40 45 50 0 55 RG - Ohms 120 24 tri td(on) 23 RG = 5Ω , VGE = 15V 90 22 VCE = 400V 21 I C = 60A 20 45 19 30 18 t d(on) - Nanoseconds 75 60 I C = 30A 15 17 0 25 50 75 40 50 60 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 105 14 30 100 125 16 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 70 80 90 t d(on) - Nanoseconds 120 t d(on) - Nanoseconds t r i - Nanoseconds tri RG = 5Ω , VGE = 15V VCE = 400V t r i - Nanoseconds 30 140 TJ = 150ºC, VGE = 15V 160 160 100 IXXH60N65B4H1 Fig. 21. Forward Current vs. Forward Voltage Fig. 22. Reverse Recovery Charge QRR vs. -diF/dt 2.4 100 TVJ = 150ºC 2.2 80 2.0 QRR - MicroCoulombs TVJ = 25ºC I F - Amperes I F = 50A VR = 300V 150ºC 60 40 1.8 30A 1.6 1.4 1.2 10A 20 1.0 0 0.8 0 0.5 1 1.5 2 2.5 400 600 800 VF - Volts 1000 1200 1400 1600 140 70 TVJ = 150ºC TVJ = 150ºC 120 I F = 50A VR = 300V tRR - Nanaseconds 60 I RR - Amperes 2000 Fig. 24. Recover Time tRR vs. -diF/dt Fig. 23. Peak Reverse Current IRM vs. -diF/dt 30A 50 10A 40 30 20 VR = 300V 100 80 I F = 50A 60 30A 10A 40 10 20 400 600 800 1000 1200 1400 1600 1800 2000 400 600 800 1200 1400 1600 1800 2000 Fig. 26. Dynamic Parameters QRR, IRM vs. Virtual Junction Temperature TVJ Fig. 25. Recovery Energy EREC vs. -diF/dt 1.20 500 VR = 300V TVJ = 150ºC 450 1000 -diF/dt - A/µs -diF/dt - A/µs I F =50A VR = 300V IF = 50A 1.00 -dIF/dt = 900A/µs 400 350 30A 0.80 KF EREC - MicroJoules 1800 -diF/dt - A/µs 300 KF IRM 0.60 250 10A 200 0.40 KF QRR 150 0.20 100 400 600 800 1000 1200 1400 -diF/dt - A/µs © 2016 IXYS CORPORATION, All Rights Reserved 1600 1800 2000 0 20 40 60 80 100 TVJ - Degrees Centigrade 120 140 160 IXXH60N65B4H1 Fig. 27. Maximum Transient Thermal Impedance (Diode) Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_60N65B4(E6-RZ43) 9-23-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.