IXXH60N65C4

IXXH60N65C4 XPTTM 650V IGBT GenX4TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 60A 2.4V 42ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 135 60 260 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 120 @VCE  VCES A tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs (SCSOA) RG = 82, Non Repetitive PC TC = 25°C G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 536 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g Weight     Advantages     Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V V 10 300 A A nA VCE = 0V, VGE = 20V 100 VCE(sat) IC 1.9 2.3 = 60A, VGE = 15V, Note 1 TJ = 150C © 2016 IXYS CORPORATION, All Rights Reserved  6.5 IGES 2.4 High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C Optimized for 20-60kHz Switching Square RBSOA Short Circuit Capability International Standard Package V V         Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100493C(9/16) IXXH60N65C4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 60A, VCE = 10V, Note 1 2590 132 40 VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 5 Note 2 RthJC RthCS Notes: 30 TO-247 (IXXH) Outline S D A A2 Q pF pF pF 86 19 40 nC nC nC 19 80 3.2 106 42 1.0 ns ns mJ ns ns mJ 20 90 4.2 110 54 1.5 ns ns mJ ns ns mJ 0.21 0.28 °C/W °C/W B E R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH60N65C4 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 240 120 VGE = 15V 13V 100 VGE = 15V 12V 200 11V 14V 160 I C - Amperes I C - Amperes 80 10V 60 40 9V 20 13V 12V 120 11V 80 10V 40 9V 8V 8V 7V 0 0 0.5 1 1.5 2 2.5 3 7V 0 3.5 0 5 10 VCE - Volts 120 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.2 VGE = 15V 14V 13V VGE = 15V 2.0 V CE(sat) - Normalized 12V 80 I C - Amperes 20 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC 100 15 11V 60 10V 40 9V 20 1.8 I C = 120A 1.6 1.4 1.2 I C = 60A 1.0 8V 0.8 I C = 30A 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.6 -50 4.5 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 50 75 100 125 150 175 TJ - Degrees Centigrade 5.5 Fig. 6. Input Admittance 350 TJ = 25ºC 300 5.0 I C - Amperes VCE - Volts TJ = - 40ºC 25ºC 250 4.5 4.0 3.5 I C = 120A 3.0 2.5 200 TJ = 150ºC 150 100 60A 2.0 50 1.5 30A 1.0 0 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 6 8 10 12 VGE - Volts 14 16 18 20 IXXH60N65C4 Fig. 7. Transconductance Fig. 8. Gate Charge 40 16 TJ = - 40ºC 35 VCE = 325V 14 30 I C = 60A I G = 10mA 12 25 20 V GE - Volts g f s - Siemens 25ºC 150ºC 15 10 8 6 10 4 5 2 0 0 0 40 80 120 160 200 240 0 10 20 I C - Amperes 30 40 50 60 70 80 90 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 140 f = 1 MHz Cies 100 1,000 I C - Amperes Capacitance - PicoFarads 120 Coes 80 60 100 40 TJ = 150ºC RG = 5Ω dv / dt < 10V / ns 20 Cres 0 10 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXXH60N65C4 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.0 Eoff 3.5 3.0 8 Eon Eoff 7 2.5 TJ = 150ºC , VGE = 15V I C = 60A 2.0 4 1.5 3 1.0 2 I C = 30A 0.5 10 25 30 35 40 45 50 0.0 0 30 40 50 60 70 80 90 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eon 5.0 100 4.5 90 3.0 0.8 2.5 0.6 2.0 I C = 30A 50 75 100 125 600 VCE = 400V 70 500 60 400 I C = 30A I C = 60A 50 1.0 30 100 0.5 150 20 0 5 10 15 20 25 30 35 40 45 50 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi 210 80 td(off) tfi VCE = 400V TJ = 150ºC 90 TJ = 25ºC 20 140 50 40 120 I C = 60A I C = 30A 30 20 100 60 10 0 30 30 40 50 60 70 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 80 90 0 25 50 75 100 TJ - Degrees Centigrade 125 80 150 t d(off) - Nanoseconds 120 t d(off) - Nanoseconds 60 t f i - Nanoseconds 60 150 td(off) RG = 5Ω, VGE = 15V VCE = 400V 80 55 160 70 180 RG = 5Ω, VGE = 15V 40 300 200 0.2 25 700 40 1.5 0.0 td(off) t d(off) - Nanoseconds I C = 60A 1.0 80 E on - MilliJoules 3.5 tfi 800 TJ = 150ºC, VGE = 15V 4.0 0.4 t f i - Nanoseconds 2 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.2 100 4 I C - Amperes VCE = 400V 120 1.0 55 RG = 5ΩVGE = 15V 1.4 6 RG - Ohms Eoff 1.6 20 TJ = 150ºC 1.5 0.5 t f i - Nanoseconds 1.8 15 8 TJ = 25ºC 0 5 2.0 1 0.0 E off - MilliJoules E off - MilliJoules 5 10 E on - MilliJoules 2.5 Eon RG = 5ΩVGE = 15V 6 VCE = 400V 12 VCE = 400V E on - MilliJoules E off - MilliJoules 3.0 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXH60N65C4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 200 110 tri td(on) TJ = 150ºC, VGE = 15V 160 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current I C = 30A 40 0 5 10 15 20 25 30 35 40 45 50 t r i - Nanoseconds t r i - Nanoseconds 50 tri 40 10 0 16 14 30 55 18 40 50 60 70 80 90 24 td(on) 22 RG = 5Ω, VGE = 15V I C = 60A VCE = 400V 80 20 60 18 I C = 30A 40 16 20 t d(on) - Nanoseconds t r i - Nanoseconds TJ = 25ºC I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 20 80 30 RG - Ohms 120 120 t d(on) - Nanoseconds I C = 60A 80 t d(on) - Nanoseconds 70 22 TJ = 150ºC VCE = 400V VCE = 400V 120 td(on) RG = 5Ω, VGE = 15V 160 90 24 14 0 25 50 75 100 125 12 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_60N65C4(E6-Z43) 9-27-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.