IXXH75N60C3D1

IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC= 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms 150 75 30 300 A A A A IA EAS TC = 25°C TC = 25°C 30 500 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load ICM = 150 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repetitive 10 μs PC TC = 25°C Md Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Weight Tab E C = Collector Tab = Collector Features z 750 C G = Gate E = Emitter z z TJ TJM Tstg TL TSOLD G z z z Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Ultra Fast Diode Avalanche Capability Short Circuit Capability International Standard Package Advantages z z z z High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved z V 5.5 V 25 μA 3 mA TJ = 150°C IGES z 1.85 2.30 ±100 nA 2.30 V V z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100330C(01/13) IXXH75N60C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 75A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 5Ω Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 5Ω Note 2 RthJC RthCS TO-247 (IXXH) Outline 33 S 3300 195 63 pF pF pF 107 28 46 nC nC nC 35 75 1.60 90 75 0.80 ns ns mJ ns ns mJ 130 1.40 33 72 2.50 105 80 1.07 ns ns mJ ns ns mJ 0.21 0.20 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 TJ = 150°C 1.6 IRM trr TJ = 100°C IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 100V IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V 100 25 RthJC Notes: 2.7 V V 4 A ns ns 0.90°C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH75N60C3D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 VGE = 15V 14V 13V 140 250 12V 100 80 11V 60 10V 40 14V 200 IC - Amperes IC - Amperes 120 VGE = 15V 13V 150 12V 100 11V 9V 10V 50 20 9V 8V 7V 0 0 1 2 3 7V 0 0 4 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.2 VGE = 15V 14V 13V 140 120 I 1.8 VCE(sat) - Normalized 12V IC - Amperes VGE = 15V 2.0 100 11V 80 60 10V 40 1 2 3 4 1.4 I 1.2 C = 75A 1.0 I 6V 0 1.6 0.6 8V 0 = 150A 0.8 9V 20 C C = 37.5A 0.4 -50 5 -25 0 25 VCE - Volts 50 75 100 125 150 175 11 12 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 120 8 TJ = 25ºC 7 100 80 I C IC - Amperes VCE - Volts 6 = 150A 5 4 60 TJ = 150ºC 25ºC 40 3 - 40ºC 75A 20 2 37.5A 0 1 9 10 11 12 13 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 14 15 4 5 6 7 8 VGE - Volts 9 10 IXXH75N60C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 50 16 TJ = - 40ºC, 25ºC, 150ºC VCE = 300V 14 I C = 75A 40 I G = 10mA 30 VGE - Volts g f s - Siemens 12 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 0 120 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 160 10,000 Cies 120 1,000 IC - Amperes Capacitance - PicoFarads 140 Coes 100 80 60 100 40 Cres 20 f = 1 MHz 0 100 10 0 5 10 15 20 VCE - Volts 25 30 35 40 TJ = 150ºC RG = 5Ω dv / dt < 10V / ns 200 Fig. 11. Maximum Transient Thermal Impedance 300 400 500 600 VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aasss 0.4 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXH75N60C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4 --- TJ = 150ºC , VGE = 15V VCE = 400V 1.6 8 1.4 2 5 I C = 80A Eoff Eon ---TJ = 150ºC VCE = 400V 1 2.5 0.8 2 TJ = 25ºC 0.6 1.5 4 1 3 0.4 1 2 0.2 0.5 1 0 I C = 40A 0 5 10 15 20 25 30 35 40 45 50 0 20 55 25 30 35 40 RG - Ohms Eon ---- RG = 5Ω , VGE = 15V 140 4.0 130 I C = 80A 1.0 2.5 0.8 2.0 0.6 1.5 0.2 100 125 tfi 400 I 110 100 300 90 250 80 I 0.5 150 50 50 5 10 15 20 25 35 40 45 100 td(off) - - - - 50 55 90 TJ = 25ºC 50 70 65 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 70 75 80 130 t f i - Nanoseconds I C = 40A 90 120 85 110 80 100 I C = 80A 75 70 90 80 65 25 50 75 100 TJ - Degrees Centigrade 125 70 150 t d(off) - Nanoseconds 70 td(off) - - - - VCE = 400V t d(off) - Nanoseconds 110 TJ = 150ºC 60 tfi RG = 5Ω , VGE = 15V 150 130 90 140 95 110 55 30 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 400V 50 200 = 80A RG - Ohms tfi 45 C 100 RG = 5Ω , VGE = 15V 40 350 60 170 35 C = 40A 1.0 150 30 450 VCE = 400V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 25 80 td(off) - - - - TJ - Degrees Centigrade 20 75 150 0.4 130 70 70 I C = 40A 75 65 500 120 E on - MilliJoules 3.0 50 60 TJ = 150ºC, VGE = 15V 3.5 1.2 25 55 t d(off) - Nanoseconds VCE = 400V 1.4 4.5 t f i - Nanoseconds Eoff 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.8 1.6 45 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature t f i - Nanoseconds 3 1.5 0.5 E off - MilliJoules 3.5 RG = 5Ω , VGE = 15V Eon - MilliJoules 6 Eon - MilliJoules 2.5 4 1.2 7 Eoff - MilliJoules 3 Eoff - MilliJoules Eon - Eoff 3.5 9 IXXH75N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 240 120 120 100 tri t r i - Nanoseconds C = 80A 120 80 I C = 40A 25 30 35 40 45 29 20 0 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 44 tri 42 VCE = 400V 40 I 120 C = 80A 38 100 36 80 34 60 32 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 5Ω , VGE = 15V 140 I C = 40A 40 30 20 25 50 75 27 20 50 25 30 35 40 45 50 55 IC - Amperes 180 100 125 33 20 RG - Ohms 160 TJ = 150ºC 60 40 40 20 35 31 60 0 80 40 80 15 37 TJ = 25ºC 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 60 65 70 75 80 t d(on) - Nanoseconds 100 I t d(on) - Nanoseconds 160 10 td(on) - - - - RG = 5Ω , VGE = 15V VCE = 400V VCE = 400V 5 39 td(on) - - - - TJ = 150ºC, VGE = 15V t r i - Nanoseconds tri 200 140 IXXH75N60C3D1 1000 60 A 50 IF 30 TVJ = 100°C VR = 300V nC 800 Qr 30 15 400 20 10 TVJ = 25°C 200 10 0 IF= 60A IF= 30A IF= 15A 20 IF= 60A IF= 30A IF= 15A 600 TVJ =100°C 25 IRM 40 TVJ =150°C TVJ= 100°C VR = 300V A 0 1 2 5 0 100 3 V A/μs 1000 -diF/dt VF 90 2.0 trr Kf 400 600 A/μs 800 1000 -diF/dt 1.00 TVJ = 100°C IF = 30A V V FR 15 IF = 60A IF = 30A IF = 15A 80 200 20 TVJ = 100°C VR = 300V ns 0 Fig. 23. Peak Reverse Current IRM Versus -diF/dt Fig. 22. Reverse Recovery Charge Qr Versus -diF/dt Fig. 21. Forward Current IF Versus VF 1.5 0 μs tfr 0.75 tfr VFR 1.0 10 0.50 5 0.25 IRM 0.0 70 Qr 0.5 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 0 0 200 400 -diF/dt Fig. 24. Dynamic Parameters Qr, IRM Versus TVJ Fig. 25. Recovery Time trr Versus -diF/dt 0.00 600 A/μs 800 1000 diF/dt Fig. 26. Peak Forward Voltage VFR and tfr Versus diF/dt 1 K/W Constants for ZthJC calculation: i 0.1 1 2 3 Z thJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 27. Transient Thermal Resistance Junction to Case © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_75N60C3(71)05-03-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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