IXXH80N65B4

IXXH80N65B4 XPTTM 650V IGBT GenX4TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 80A 2.1V 53ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms 160 80 430 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 160 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C 625 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight       IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 80A, VGE = 15V, Note 1 TJ = 150C © 2016 IXYS CORPORATION, All Rights Reserved  6.5 V 10 500 A A 100 nA TJ = 150C IGES  V 1.65 2.00 2.10 Optimized for 5-30kHz Switching Square RBSOA Short Circuit Capability International Standard Package High Power Density Extremely Rugged Low Gate Drive Requirement Applications  BVCES C = Collector Tab = Collector Advantages  Characteristic Values Min. Typ. Max. Tab E Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C G = Gate E = Emitter  TJ TJM Tstg TL TSOLD G    Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100527B(9/16) IXXH80N65B4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 80A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 80A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS Notes: TO-247 (IXXH) Outline 42 S 3860 196 58 pF pF pF 120 32 46 nC nC nC 26 100 3.36 112 53 1.83 ns ns mJ ns ns mJ 23 102 5.50 128 94 2.70 ns ns mJ ns ns mJ 0.21 0.24 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH80N65B4 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 160 VGE = 15V 13V 12V 140 350 VGE = 15V 11V 300 14V 250 10V 100 I C - Amperes I C - Amperes 120 80 9V 60 13V 200 12V 150 11V 10V 100 40 9V 8V 20 0 50 7V 0 0.5 1 1.5 2 2.5 3 8V 7V 0 3.5 0 5 10 VCE - Volts VGE = 15V 14V 13V 1.8 11V 1.6 V CE(sat) - Normalized I C - Amperes VGE = 15V 12V I C = 160A 120 100 10V 80 60 9V 40 8V 1 1.5 2 2.5 3 3.5 1.2 I C = 80A 1.0 I C = 40A 7V 6V 0 1.4 0.8 20 0.5 0.6 4 -50 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.5 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 160 0 20 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC 140 15 Fig. 6. Input Admittance 200 TJ = 25ºC 4.0 180 160 TJ = - 40ºC 25ºC 140 I C - Amperes VCE - Volts 3.5 3.0 I C = 160A 2.5 TJ = 150ºC 120 100 80 60 2.0 80A 40 1.5 20 40A 0 1.0 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 10 VGE - Volts 11 12 13 14 IXXH80N65B4 Fig. 7. Transconductance Fig. 8. Gate Charge 60 16 TJ = - 40ºC VCE = 10V I C = 80A I G = 10mA 12 25ºC 40 V GE - Volts g f s - Siemens VCE = 325V 14 50 150ºC 30 20 10 8 6 4 10 2 0 0 0 50 100 150 200 250 300 0 350 20 I C - Amperes 40 60 80 100 120 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 180 160 Capacitance - PicoFarads Cies 140 I C - Amperes 1,000 Coes 100 120 100 80 60 Cres f = 1 MHz 10 40 TJ = 150ºC 20 RG = 3Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXXH80N65B4 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.0 Eoff 3.5 3.5 12 Eon 2.5 6 2.0 4 I C = 40A 1.5 1.0 6 9 12 15 18 21 24 27 30 E off - MilliJoules E off - MilliJoules I C = 80A 5 2.0 4 1.5 3 TJ = 25ºC 1.0 2 2 0.5 1 0 0.0 0 40 33 45 50 55 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 3.2 Eon 7 4 I C = 80A 1.6 3 1.2 2 100 120 400 90 300 I C = 80A I C = 40A 60 200 100 0 3 6 9 12 15 18 21 24 27 30 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi 140 200 td(off) 140 60 120 TJ = 25ºC 40 100 20 80 45 50 55 60 65 70 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 75 80 190 VCE = 400V 100 t f i - Nanoseconds TJ = 150ºC 80 210 170 80 150 60 130 I C = 40A, 80A 40 110 20 90 0 25 50 75 100 TJ - Degrees Centigrade 125 70 150 t d(off) - Nanoseconds 160 td(off) 33 RG = 3Ω , VGE = 15V t d(off) - Nanoseconds 100 tfi 120 180 VCE = 400V t f i - Nanoseconds 500 0 0 150 125 RG = 3Ω , VGE = 15V 40 td(off) TJ = 150ºC, VGE = 15V TJ - Degrees Centigrade 120 600 1 0.4 140 80 30 I C = 40A 75 t f i - Nanoseconds Eoff - MilliJoules 5 50 75 VCE = 400V Eon - MilliJoules 2.4 25 tfi 150 6 0.8 70 t d(off) - Nanoseconds VCE = 400V 2.0 65 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 180 8 RG = 3Ω , VGE = 15V 2.8 60 I C - Amperes RG - Ohms 3.6 E on - MilliJoules 8 E on - MilliJoules 3.0 6 TJ = 150ºC VCE = 400V 2.5 7 Eon RG = 3Ω , VGE = 15V VCE = 400V 3 Eoff 3.0 10 TJ = 150ºC , VGE = 15V Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXH80N65B4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri 150 120 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 120 td(on) tri 100 TJ = 150ºC, VGE = 15V 60 I C = 40A 60 40 30 t r i - Nanoseconds t r i - Nanoseconds 90 0 12 15 18 21 24 27 30 tri 24 TJ = 150ºC 22 20 40 45 50 55 60 65 70 75 80 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 60 20 33 RG - Ohms 160 26 TJ = 25ºC 40 20 0 80 t d(on) - Nanoseconds I C = 80A t d(on) - Nanoseconds 80 9 28 VCE = 400V 120 6 td(on) RG = 3Ω , VGE = 15V 100 VCE = 400V 3 30 td(on) 32 30 RG = 3Ω , VGE = 15V VCE = 400V 28 I C = 80A 100 26 80 24 60 22 I C = 40A 40 20 20 t d(on) - Nanoseconds t r i - Nanoseconds 120 18 0 25 50 75 100 125 16 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_80N65B4D1(E7-RZ43) 9-21-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.