IXXH80N65B4H1

IXXH80N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 80A 2.1V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 160 80 62 430 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 160 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C 625 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features  TJ TJM Tstg TL TSOLD G     Optimized for 5-30kHz Switching Square RBSOA Anti-Parallel Sonic Diode Short Circuit Capability International Standard Package Advantages    High Power Density Extremely Rugged Low Gate Drive Requirement Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 80A, VGE = 15V, Note 1 TJ = 150C © 2016 IXYS CORPORATION, All Rights Reserved  V 6.5 TJ = 150C IGES   V  50 A 4 mA  100 1.65 2.00  2.10 Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts nA V V DS100528C(9/16) IXXH80N65B4H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 80A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 80A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS TO-247 (IXXH) Outline 42 S 3860 395 58 pF pF pF 120 32 46 nC nC nC 26 103 4.0 122 52 2.1 ns ns mJ ns ns mJ 23 100 5.2 145 102 3.1 ns ns mJ ns ns mJ 0.21 0.24 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 50A, VGE = 0V, Note 1 IRM trr IF = 50A, VGE = 0V, -diF/dt = 900A/μs, VR = 300V Characteristic Values Min. Typ. Max. TJ = 150°C 1.8 2.5 V V TJ = 150°C TJ = 150°C 45 150 A ns RthJC Notes: 0.45 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH80N65B4H1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 160 VGE = 15V 13V 12V 140 350 VGE = 15V 11V 300 14V 250 10V 100 I C - Amperes I C - Amperes 120 80 9V 60 13V 200 12V 150 11V 10V 100 40 9V 8V 20 0 50 7V 0 0.5 1 1.5 2 2.5 3 8V 7V 0 3.5 0 5 10 VCE - Volts VGE = 15V 14V 13V 1.8 11V 1.6 V CE(sat) - Normalized I C - Amperes VGE = 15V 12V I C = 160A 120 100 10V 80 60 9V 40 8V 1 1.5 2 2.5 3 3.5 1.2 I C = 80A 1.0 I C = 40A 7V 6V 0 1.4 0.8 20 0.5 0.6 4 -50 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.5 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 160 0 20 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC 140 15 Fig. 6. Input Admittance 200 TJ = 25ºC 4.0 180 160 TJ = - 40ºC 25ºC 140 I C - Amperes VCE - Volts 3.5 3.0 I C = 160A 2.5 TJ = 150ºC 120 100 80 60 2.0 80A 40 1.5 20 40A 0 1.0 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 10 VGE - Volts 11 12 13 14 IXXH80N65B4H1 Fig. 7. Transconductance Fig. 8. Gate Charge 60 16 TJ = - 40ºC VCE = 10V I C = 80A I G = 10mA 12 25ºC 40 V GE - Volts g f s - Siemens VCE = 325V 14 50 150ºC 30 20 10 8 6 4 10 2 0 0 0 50 100 150 200 250 300 0 350 20 I C - Amperes 40 60 80 100 120 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 180 160 Capacitance - PicoFarads Cies 140 I C - Amperes 1,000 Coes 100 120 100 80 60 Cres f = 1 MHz 10 40 TJ = 150ºC 20 RG = 3Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXXH80N65B4H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.5 Eoff 4.0 4.0 12 Eon 3.0 6 2.5 4 Eoff - MilliJoules Eoff - MilliJoules 3.0 I C = 40A 2 1.5 3.6 18 21 24 27 30 4 TJ = 150ºC 1.5 3 2 TJ = 25ºC 1 0.0 0 40 45 50 55 60 65 70 75 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 180 8 Eon 7 tfi 150 2.0 4 1.6 3 I C = 40A 1.2 td(off) 500 VCE = 400V t f i - Nanoseconds 5 600 120 400 I C = 80A 90 300 I C = 40A 60 200 2 30 0.8 100 1 0.4 25 140 50 75 100 0 0 150 125 6 9 12 15 18 21 24 27 30 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi 140 220 td(off) 160 60 140 TJ = 25ºC 40 120 20 100 45 50 55 60 65 70 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 75 80 220 VCE = 400V 100 t f i - Nanoseconds 80 240 200 80 180 60 160 I C = 40A, 80A 40 140 20 120 0 25 50 75 100 TJ - Degrees Centigrade 125 100 150 t d(off) - Nanoseconds TJ = 150ºC t d(off) - Nanoseconds 180 td(off) 33 RG = 3Ω , VGE = 15V VCE = 400V 100 tfi 120 200 RG = 3Ω , VGE = 15V 40 0 3 TJ - Degrees Centigrade 120 t f i - Nanoseconds t d(off) - Nanoseconds I C = 80A 2.4 80 TJ = 150ºC, VGE = 15V 6 VCE = 400V Eon - MilliJoules Eoff - MilliJoules 5 2.0 33 RG = 3Ω , VGE = 15V 2.8 2.5 RG - Ohms Eoff 3.2 15 6 VCE = 400V 0.5 0 12 7 1.0 2.0 9 Eon E on - MilliJoules 8 E on - MilliJoules I C = 80A 8 RG = 3Ω , VGE = 15V VCE = 400V 3.5 6 Eoff 3.5 10 TJ = 150ºC , VGE = 15V 3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXH80N65B4H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri td(on) 60 I C = 80A 60 40 26 TJ = 25ºC 80 24 60 22 TJ = 150ºC 40 I C = 40A 30 0 0 3 6 9 12 15 18 21 24 27 30 20 tri td(on) 32 30 RG = 3Ω , VGE = 15V VCE = 400V 100 28 26 I C = 80A 80 24 60 22 I C = 40A 40 20 20 t d(on) - Nanoseconds t r i - Nanoseconds 120 18 0 25 50 75 100 45 50 55 60 65 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 18 40 33 RG - Ohms 160 20 20 125 16 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 70 75 80 t d(on) - Nanoseconds 80 td(on) VCE = 400V 100 120 90 tri 28 RG = 3Ω , VGE = 15V 100 VCE = 400V 150 120 120 TJ = 150ºC, VGE = 15V t d(on) - Nanoseconds t r i - Nanoseconds 180 140 t r i - Nanoseconds 210 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current IXXH80N65B4H1 Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt Fig. 21. Typ. Forward characteristics 10 100 TVJ = 150ºC VR = 300V 8 80 TVJ = 25ºC IF = 100A TVJ = 150ºC IF [A] 60 QRM [µC] 40 6 50A 4 25A 20 2 0 0 0.5 1 1.5 2 2.5 0 400 3 1400 1600 350 IF = 100A VR = 300V 300 50A 200 [ns] 40 150 30 100 800 1000 1200 1400 VR = 300V 50A trr [A] 600 TVJ = 150ºC IF = 100A 250 25A 50 50 400 1600 25A 600 800 diF/dt [A/µs] 1000 1200 1400 1600 -diF/dt [A/µs] Fig. 26. Maximum Transient Thermal Impedance Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt 1 2 1.8 1200 Fig. 24. Typ. Recovery Time trr vs. -diF/dt 60 20 400 1000 Fig. 23. Typ. Peak Reverse Current IRM vs. -diF/dt TVJ = 150ºC IRM 800 -diF/ dt [A/µs] 80 70 600 VF - [V] TVJ = 150ºC VR = 300V 1.6 Erec [mJ] 1.2 50A 1 Z(th)JC - ºC / W IF = 100A 1.4 0.1 0.8 25A 0.6 0.4 400 600 800 1000 1200 -diF/dt [A/µs] © 2016 IXYS CORPORATION, All Rights Reserved 1400 1600 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: IXX_80N65B4(E7-RZ43) 9-21-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.