IXXK200N65B4

Preliminary Technical Information XPTTM 650V IGBT GenX4TM IXXK200N65B4 IXXX200N65B4 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 200A 1.7V 80ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Lead Current Limit TC = 110°C TC = 25°C, 1ms 480 160 200 1100 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 400 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive 10 μs PC TC = 25°C 1630 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C G C E Maximum Ratings TJ TJM Tstg PLUS247 (IXXX) G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 650 VGE(th) IC = 4mA, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC V     = 160A, VGE = 15V, Note 1 TJ = 150°C © 2014 IXYS CORPORATION, All Rights Reserved 1.4 1.6 Tab E = Emitter Tab = Collector Optimized for 10-30kHz Switching Square RBSOA Short Circuit Capability International Standard Packages High Current Handling Capability Advantages      25 μA 2 mA TJ = 150°C E High Power Density Low Gate Drive Requirement Applications V 6.5 C Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) G G = Gate C = Collector  TL TSOLD Tab ±200 nA 1.7 V V     Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100518C(6/14) IXXK200N65B4 IXXX200N65B4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 60A, VCE = 10V, Note 1 54 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 200A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 400V, RG = 1 Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 400V, RG = 1 Note 2 RthJC RthCS TO-264 Outline 90 S 11.25 670 390 nF pF pF 553 110 253 nC nC nC 62 76 4.40 245 80 2.20 ns ns mJ ns ns mJ 3.50 54 65 5.55 236 110 2.54 ns ns mJ ns ns mJ 0.15 0.092 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2,4 - Collector 3 - Emitter PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK200N65B4 IXXX200N65B4 Fig. 1. Output Characteristics @ TJ = 25ºC 300 VGE = 15V 13V 12V 11V 250 VGE = 15V 11V 10V 10V 300 9V 250 200 9V I C - Amperes I C - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 150 8V 100 200 150 8V 100 50 50 7V 0 7V 0 0 0.5 1 1.5 2 2.5 0 1 2 3 4 VCE - Volts 1.6 VGE = 15V 13V 12V 11V 1.4 8 9 10 150 175 I C = 300A 10V 200 I C - Amperes 7 VGE = 15V VCE(sat) - Normalized 250 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 300 5 VCE - Volts 9V 150 100 8V 1.2 1.0 I C = 200A 0.8 50 I C = 100A 7V 0.6 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.0 50 75 100 125 Fig. 6. Input Admittance 200 TJ = 25ºC 180 3.5 160 TJ = - 40ºC 25ºC 140 2.5 I C - Amperes 3.0 VCE - Volts 25 TJ - Degrees Centigrade I C = 300A 2.0 TJ = 150ºC 120 100 80 60 200A 40 1.5 20 100A 1.0 7 8 9 10 0 11 12 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 IXXK200N65B4 IXXX200N65B4 Fig. 7. Transconductance Fig. 8. Gate Charge 160 16 TJ = - 40ºC 140 VCE = 325V 14 I C = 200A I G = 10mA 12 120 100 80 V GE - Volts g f s - Siemens 25ºC 150ºC 60 10 8 6 40 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 150 I C - Amperes 250 300 350 400 450 500 550 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 450 100,000 f = 1 MHz 400 350 300 10,000 Cies 1,000 I C - Amperes Capacitance - PicoFarads 200 250 200 150 Coes 100 Cres 50 100 1 0 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 0 5 10 15 20 VCE - Volts 25 30 35 40 100 200 300 Fig. 11. Maximum Transient Thermal Impedance 400 500 600 700 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaaa 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXK200N65B4 IXXX200N65B4 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 7 Eoff 6 Eon - Fig. 13. Inductive Switching Energy Loss vs. Collector Current 3.0 13 Eoff --11 TJ = 150ºC , VGE = 15V 3 5 I C = 50A 2 Eoff - MilliJoules E off - MilliJoules 7 I C = 100A 2 3 4 5 6 7 8 9 TJ = 25ºC 1.5 50 10 55 60 65 70 3.2 90 95 1 100 2 t f i - Nanoseconds 1.2 800 700 180 600 160 500 I C = 50A I C = 100A 140 400 120 300 1 100 200 0 150 80 t d(off) - Nanoseconds 3 Eon - MilliJoules 1.6 td(off) - - - - VCE = 400V 200 5 4 tfi TJ = 150ºC, VGE = 15V VCE = 400V I C = 100A 900 220 6 2.4 E off - MilliJoules 85 240 ---- RG = 1Ω , VGE = 15V 2.0 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 7 2.8 75 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 3 2 RG - Ohms Eoff 4 0.5 1 1 TJ = 150ºC 2.0 1.0 3 1 5 VCE = 400V E on - MilliJoules 4 E on - MilliJoules 9 6 ---- RG = 1Ω , VGE = 15V 2.5 VCE = 400V 5 Eon I C = 50A 0.8 0.4 25 50 75 100 125 100 1 2 3 4 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 200 TJ = 150ºC 280 270 120 255 250 TJ = 25ºC 80 245 60 240 40 235 20 65 70 75 80 9 10 85 I C - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 90 95 230 100 320 td(off) - - - 300 RG = 1Ω , VGE = 15V VCE = 400V t f i - Nanoseconds 260 60 8 140 280 I C = 50A 120 260 I C = 100A 100 240 80 220 60 25 50 75 100 TJ - Degrees Centigrade 125 200 150 t d(off) - Nanoseconds 140 55 160 VCE = 400V 265 50 tfi 275 160 100 7 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 180 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - RG = 1Ω , VGE = 15V 180 6 RG - Ohms TJ - Degrees Centigrade 220 5 IXXK200N65B4 IXXX200N65B4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 180 td(on) - - - - TJ = 150ºC, VGE = 15V 160 130 100 120 90 70 58 60 56 t r i - Nanoseconds t r i - Nanoseconds 70 I C = 50A 60 VCE = 400V TJ = 25ºC TJ = 150ºC 50 54 40 52 30 50 60 60 40 50 20 48 20 40 10 46 30 0 0 1 2 3 4 5 6 7 8 9 50 10 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 80 80 62 100 90 100 td(on) - - - - RG = 1Ω , VGE = 15V 80 t d(on) - Nanoseconds I C = 100A 120 tri 64 110 VCE = 400V 140 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 44 100 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 130 70 tri 110 td(on) - - - - RG = 1Ω , VGE = 15V 65 90 60 I C = 100A 70 55 50 50 I C = 50A 30 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 400V 45 10 25 50 75 100 125 40 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_200N65B4(F9)3-04-14-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.