IXXK300N60C3

Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60C3 IXXX300N60C3 VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 300A 2.0V 82ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C (Chip Capability) TC = 25°C, 1ms 510 160 300 1075 A A A A IA EAS TC = 25°C TC = 25°C 100 500 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 600 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C 2300 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G C E PLUS247 (IXXX) G Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C © 2012 IXYS CORPORATION, All Rights Reserved V 25 μA 2 mA TJ = 150°C E Tab E = Emitter Tab = Collector Features z z z z z z Optimized for 20-60kHz Switching Square RBSOA International Standard Packages Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages z ±200 nA 2.0 V V z z z z z z z 1.5 1.7 C High Power Density Low Gate Drive Requirement Applications V 5.5 G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100504(10/12) IXXK300N60C3 IXXX300N60C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 TO-264 Outline 52 S nF pF pF Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 13.5 743 237 Qg Qge Qgc IC = 300A, VGE = 15V, VCE = 0.5 • VCES 438 124 208 nC nC nC 50 85 3.35 160 82 1.90 ns ns mJ ns ns mJ td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 400V, RG = 1Ω Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 400V, RG = 1Ω Note 2 RthJC RthCS 2.80 48 80 4.25 188 90 2.35 ns ns mJ ns ns mJ 0.15 0.065 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK300N60C3 IXXX300N60C3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 300 VGE = 15V 13V 12V 250 300 250 11V 11V 200 IC - Amperes IC - Amperes VGE = 15V 13V 12V 10V 150 100 50 7V 0.5 1 1.5 2 2.5 9V 8V 50 8V 0 10V 150 100 9V 0 200 0 3 7V 0 1 2 3 4 300 7 8 9 10 150 175 1.8 VGE = 15V 13V 12V VGE = 15V 11V 1.6 200 VCE(sat) - Normalized IC - Amperes 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 250 5 VCE - Volts VCE - Volts 10V 150 9V 100 I C = 300A 1.4 1.2 I C = 200A 1.0 8V 50 0.8 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 I C = 100A 0.6 -50 4 -25 0 VCE - Volts 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 5.0 TJ = 25ºC 4.5 180 160 4.0 C = 300A IC - Amperes VCE - Volts 140 I 3.5 3.0 2.5 200A TJ = 150ºC 25ºC 120 - 40ºC 100 80 60 2.0 40 1.5 20 100A 1.0 0 8 9 10 11 12 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE - Volts 8 9 10 IXXK300N60C3 IXXX300N60C3 Fig. 8. Gate Charge Fig. 7. Transconductance 120 16 TJ = - 40ºC, 25ºC, 150ºC 80 14 VCE = 300V 12 I G = 10mA I C = 300A 10 VGE - Volts g f s - Siemens 100 60 40 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 150 Fig. 9. Capacitance 250 300 350 400 450 Fig. 10. Reverse-Bias Safe Operating Area 700 100,000 f = 1 MHz 600 500 10,000 Cies IC - Amperes Capacitance - PicoFarads 200 QG - NanoCoulombs IC - Amperes Coes 1,000 400 300 200 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 100 Cres 0 100 100 0 5 10 15 20 25 30 35 40 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Maximum Transient Thermal Impedance 10,000 0.1 VCE(sat) Limit ID - Amperes Z(th)JC - ºC / W 1,000 0.01 100 25µs External Lead Current Limit 100µs 10 1ms TJ = 175ºC 1 10ms 100ms TC = 25ºC Single Pulse 0.001 0.00001 DC 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXXK300N60C3 IXXX300N60C3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4 3.0 8 Eoff 4 Eon - Eoff --2.5 TJ = 150ºC , VGE = 15V VCE = 400V 4 2 1 I C ---5 VCE = 400V Eoff - MilliJoules I C = 100A 2 6 2.0 4 TJ = 150ºC 1.5 1.0 3 2 TJ = 25ºC Eon - MilliJoules 3 Eon RG = 1Ω ,   VGE = 15V 6 Eon - MilliJoules Eoff - MilliJoules 3 Fig. 14. Inductive Switching Energy Loss vs. Collector Current 2 = 50A 0.5 1 1 0 0.0 0 1 2 3 4 5 6 7 8 9 50 10 55 60 65 RG - Ohms 3.0 Eon 3 1.0 2 I C = 50A 0.5 1 0.0 75 100 t f i - Nanoseconds 1.5 VCE = 400V 600 100 500 80 I C = 50A I 300 40 200 20 100 0 1 2 3 4 5 RG = 1Ω , VGE = 15V VCE = 400V 200 60 180 160 TJ = 25ºC 20 0 75 80 9 10 85 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 90 95 100 td(on) - - - - RG = 1Ω , VGE = 15V I C = 100A VCE = 400V 80 240 220 I C = 50A 60 200 I C = 100A 40 140 20 120 100 0 180 160 I C = 50A 25 50 75 100 TJ - Degrees Centigrade 125 140 150 t d(off) - Nanoseconds 220 80 70 8 260 tfi 240 TJ = 150ºC 65 7 120 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - t f i - Nanoseconds tfi 60 6 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 260 55 400 = 100A RG - Ohms 140 50 C 60 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 40 700 0 0 150 125 td(off) - - - - TJ - Degrees Centigrade 100 0 100 t d(off) - Nanoseconds 4 I C = 100A 120 95 TJ = 150ºC, VGE = 15V 120 Eon - MilliJoules Eoff - MilliJoules tfi 140 VCE = 400V 50 90 800 5 RG = 1Ω ,  VGE = 15V 25 85 160 ---- 2.0 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 6 Eoff 75 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 2.5 70 IXXK300N60C3 IXXX300N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 160 td(on) - - - - 140 TJ = 150ºC, VGE = 15V VCE = 400V 120 120 = 100A 100 80 I C = 50A 80 60 60 40 40 20 20 0 2 3 4 5 6 7 8 9 52 RG = 1Ω , VGE = 15V TJ = 25ºC VCE = 400V 70 50 60 48 TJ = 150ºC 50 46 40 44 30 42 20 0 1 td(on) - - - - 50 10 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds C t d(on) - Nanoseconds I 100 54 tri 80 t r i - Nanoseconds tri 140 t r i - Nanoseconds 90 160 40 100 IC - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 54 tri RG = 1Ω , VGE = 15V VCE = 400V 100 52 50 80 48 I C = 100A 60 46 40 44 I C = 50A 20 42 0 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds 120 td(on) - - - - 125 40 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_300N60C3(9D)10-11-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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