IXXN100N60B3H1

IXXN100N60B3H1 XPTTM 600V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 10-30kHz Switching VCES IC90 VCE(sat) tfi(typ) SOT-227B, miniBLOC E153432 Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IF110 ICM TC TC TC TC 170 100 50 440 A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load ICM = 200 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C = 25°C (Chip Calability) = 90°C = 110°C = 25°C, 1ms Md Mounting Torque Terminal Connection Torque Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z z TJ TJM Tstg 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Weight 500 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g z z z z z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved z V 50 μA 4 mA TJ = 125°C 1.50 1.77 High Power Density Low Gate Drive Requirement Applications V 5.5 Optimized for Low Switching Losses International Standard Package Square RBSOA Isolation Voltage 2500V~ Anti-Parallel Ultra Fast Diode Optimized for 10-30kHz Switching Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages z IGES 600V 100A 1.80V 150ns E Symbol VISOL = = ≤ = ±100 nA 1.80 V V z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100421B(04/13) IXXN100N60B3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 70A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 Inductive load, TJ = 150°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 RthJC RthCS SOT-227B miniBLOC (IXXN) 40 S 4860 475 83 pF pF pF 143 37 60 nC nC nC 30 70 1.9 120 150 2.0 ns ns mJ ns ns mJ 2.8 32 60 2.3 150 200 2.8 ns ns mJ ns ns mJ 0.05 0.25 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. TJ = 150°C 1.6 1.4 TJ = 100°C 8.3 A 140 ns V V 0.42 °C/W RthJC Notes: 2.5 1.8 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXN100N60B3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 140 350 VGE = 15V 13V 12V 120 VGE = 15V 11V 100 13V 250 80 10V 60 9V IC - Amperes IC - Amperes 14V 300 40 12V 200 11V 150 10V 100 8V 20 9V 50 7V 6V 0 0 0.4 0.8 1.2 1.6 2 2.4 8V 7V 0 2.8 0 2 4 6 8 Fig. 3. Output Characteristics @ T J = 150ºC VGE = 15V 13V 12V 120 IC - Amperes 80 9V 60 40 8V 7V 5V 1 1.5 2 2.5 3 1.2 18 20 150 175 = 140A C = 70A 1.0 I C = 35A 0.6 -50 3.5 -25 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 TJ = 25ºC 4.5 160 140 4.0 120 3.5 I 3.0 C IC - Amperes VCE - Volts C I VCE - Volts 5.0 16 1.4 0.8 20 0 I 1.6 10V 0.5 14 VGE = 15V 11V 100 0 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.8 VCE(sat) - Normalized 140 10 VCE - Volts VCE - Volts = 140A 2.5 80 60 70A 2.0 TJ = 150ºC 25ºC - 40ºC 100 40 1.5 20 35A 1.0 0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXN100N60B3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 25ºC 60 150ºC 50 I C = 70A I G = 10mA 12 VGE - Volts g f s - Siemens VCE = 300V 14 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 220 10,000 180 Cies 160 1,000 IC - Amperes Capacitance - PicoFarads 200 Coes 100 140 120 100 80 60 Cres 40 f = 1 MHz 20 5 10 15 20 25 30 35 RG = 2Ω dv / dt < 10V / ns 0 100 10 0 TJ = 150ºC 40 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 1 VCE(sat) Limit 25µs 100µs 10 1ms 1 TJ = 150ºC 0.1 0.01 10ms TC = 25ºC Single Pulse 100ms DC 0.1 1 Z (th)JC - ºC / W ID - Amperes 100 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXXN100N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4.5 5 7 Eoff 4.0 Eon - Eoff --6 TJ = 150ºC , VGE = 15V 4 2.5 3 I C 2.0 3 3 4 5 6 7 1 2 8 9 10 11 12 13 14 2 TJ = 25ºC 1 0 1 2 3 2 = 50A 1.5 4 VCE = 360V TJ = 150ºC Eoff - MilliJoules Eoff - MilliJoules I C = 100A 20 15 30 40 50 RG - Ohms 5 3 2 2 I C = 50A 1 1 0 75 100 I 260 220 180 I 3 4 5 6 7 120 TJ = 25ºC 100 80 50 60 70 9 10 11 12 13 14 15 80 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved tfi 90 40 100 td(off) - - - - 240 220 RG = 2Ω , VGE = 15V 200 VCE = 360V I C = 100A 220 180 200 160 180 140 I C = 50A 160 120 140 100 120 80 100 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 200 150 50 8 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 260 280 160 40 180 = 100A 100 240 200 30 C 140 280 320 240 TJ = 150ºC 20 260 220 2 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 360V 250 = 50A 100 t f i - Nanoseconds tfi RG = 2Ω , VGE = 15V 300 C RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 350 300 140 0 150 125 340 td(off) - - - - TJ - Degrees Centigrade 400 0 100 VCE = 360V t f i - Nanoseconds 3 50 90 t d(off) - Nanoseconds I C = 100A 25 80 TJ = 150ºC, VGE = 15V 300 4 VCE = 360V Eon - MilliJoules Eoff - MilliJoules tfi ---- RG = 2Ω , VGE = 15V 4 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 340 5 Eon 60 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 5 ---- Eon - MilliJoules 5 Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 4 VCE = 360V 3.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXXN100N60B3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 76 TJ = 150ºC, VGE = 15V VCE = 360V 140 60 100 52 80 I C 44 = 50A 60 36 40 28 20 3 4 5 6 7 8 9 10 11 12 13 14 180 37 td(on) - - - - 36 RG = 2Ω , VGE = 15V 35 VCE = 360V 120 34 100 I C 33 = 100A 80 32 60 31 I C = 50A 40 t d(on) - Nanoseconds t r i - Nanoseconds 140 30 20 29 0 25 50 75 80 32 TJ = 150ºC, 25ºC 60 30 40 28 20 26 30 40 50 60 70 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 34 20 15 RG - Ohms tri 100 0 20 2 36 RG = 2Ω , VGE = 15V 100 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 80 90 24 100 t d(on) - Nanoseconds C = 100A t d(on) - Nanoseconds I td(on) - - - - VCE = 360V 68 120 38 tri 120 t r i - Nanoseconds 160 t r i - Nanoseconds 140 84 tri IXXN100N60B3H1 Fig. 22. Forward Current IF Versus VF Fig. 25. Dynamic Parameters Qr, IRM Versus TVJ Fig. 23. Reverse Recovery Charge Qr Versus -diF/dt Fig. 24. Peak Reverse Current IRM Versus -diF/dt Fig. 26. Recovery Time trr Versus -diF/dt 1.00 Z(th)JC - [ /ºC Z (th)JC ºC W / W] 1.00 0.10 0.10 0.01 0.01 0.0001 0.0001 0.001 0.001 0.01 0.01 Pulse [ms] PulseWidth Width Seconds 0.1 0.1 1 10 1 10 Maximum Transient Thermal Impedance Fig. 26. Maximum Transient Thermal Impedance junction to case (for diode) Fig.Fig. 2627. Maximum transient thermal impedance © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_100N60B3(7D)12-01-11-B Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: IXXN100N60B3H1