IXXN200N60B3H1

Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 200 98 30 1000 A A A A IA EAS TC = 25°C TC = 25°C 100 1 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 400 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Md 50/60Hz IISOL ≤ 1mA G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z z TJ TJM Tstg VISOL Ec t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight 780 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g z z z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate miniBLOC, with Aluminium Nitride Isolation Optimized for Low Conduction and Switching Losses Isolated Mounting Surface Anti-Parallel Ultra Fast Diode 2500V~ Electrical Isolation Optimized for 10-30kHz Switching Avalanche Rated Short Circuit Capability Very High Current Capability Square RBSOA Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved V 50 μA 3 mA Note 2, TJ = 150°C IGES Applications V 6.0 1.40 1.58 High Power Density Low Gate Drive Requirement ±200 nA 1.70 V V z z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100471A(02/13) IXXN200N60B3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 200A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 3 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 3 RthJC RthCS SOT-227B miniBLOC (IXXN) 45 S 9970 570 183 pF pF pF 315 98 130 nC nC nC 48 100 2.85 160 110 2.90 ns ns mJ ns ns mJ 4.40 46 94 4.40 180 215 3.45 ns ns mJ ns ns mJ 0.05 0.16 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 100A, VGE = 0V, Note 1 IRM IF = 100A, VGE = 0V, -diF/dt = 1500A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. 2.5 TJ = 150°C 2.3 V V TJ = 150°C 95 A 100 ns 0.70 °C/W RthJC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXN200N60B3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 200 VGE = 15V 13V 12V 300 150 11V 100 10V 11V 200 10V 150 100 9V 50 12V 250 IC - Amperes IC - Amperes VGE = 15V 13V 9V 50 8V 8V 7V 6V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2 4 6 Fig. 3. Output Characteristics @ T J = 150ºC 200 VGE = 15V 13V 12V 10 12 14 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.5 VGE = 15V 1.4 11V VCE(sat) - Normalized 150 IC - Amperes 8 VCE - Volts VCE - Volts 10V 100 9V I 1.3 C = 200A 1.2 1.1 I 1.0 C = 150A I C 0.9 50 8V = 100A 0.8 7V 5V 0 0 0.4 0.8 1.2 1.6 2 2.4 0.7 -50 2.8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 4.5 140 IC - Amperes VCE - Volts 125 150 175 180 160 4.0 3.5 C 100 Fig. 6. Input Admittance 5.0 I 75 200 TJ = 25ºC 5.5 3.0 50 TJ - Degrees Centigrade = 200A 120 100 TJ = 150ºC 25ºC 80 - 40ºC 60 2.5 150A 2.0 40 100A 1.5 20 1.0 0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXN200N60B3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 110 16 100 TJ = - 40ºC, 25ºC, 150ºC 80 12 70 10 VGE - Volts g f s - Siemens VCE = 300V 14 90 60 50 40 I C = 200A I G = 10mA 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 200 40 80 120 160 200 240 280 320 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 450 100,000 f = 1 MHz 400 Capacitance - PicoFarads 350 Cies 300 IC - Amperes 10,000 Coes 1,000 250 200 150 100 50 Cres 100 0 5 10 15 20 25 30 35 0 100 40 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 150 200 250 300 VCE - Volts 400 450 500 550 600 650 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 350 VCE - Volts 1 VCE(sat) Limit 25µs 100 ID - Amperes 100µs 10 1ms Z(th)JC - ºC / W 0.1 External Lead Limit 10ms 1 TJ = 175ºC 0.001 100ms TC = 25ºC Single Pulse DC 0.1 1 0.01 10 100 1000 0.0001 0.00001 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXXN200N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff --- 6 TJ = 150ºC , VGE = 15V VCE = 360V 3.0 3 2.5 2 I C 3 4 5 6 7 3.0 3 TJ = 25ºC 2.5 1 8 9 1.5 50 10 55 60 65 70 RG - Ohms 4.0 2 2.0 I C = 50A 1.5 75 100 125 t f i - Nanoseconds Eoff - MilliJoules 2.5 td(off) - - - 500 VCE = 360V I 1 200 0 150 160 I C VCE = 360V 450 260 400 240 350 100 2 3 4 5 220 220 200 180 TJ = 25ºC 10 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 95 VCE = 360V 260 240 I C = 50A I C = 100A 150 50 90 td(off) - - - - 180 120 100 85 tfi RG = 1Ω , VGE = 15V 200 100 60 280 200 140 80 9 250 100 75 8 220 160 70 7 300 140 65 6 160 140 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 260 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - 280 TJ = 150ºC 60 200 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds tfi RG = 1Ω , VGE = 15V 55 = 100A RG - Ohms 380 50 400 300 1 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 180 = 50A 240 TJ - Degrees Centigrade 300 C 280 t d(off) - Nanoseconds 3 Eon - MilliJoules I C = 100A 340 0 100 95 TJ = 150ºC, VGE = 15V 320 4 3.0 50 90 600 tfi VCE = 360V 25 85 360 ---- RG = 1Ω , VGE = 15V 3.5 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 5 Eon 75 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 2 1 0 2 TJ = 150ºC 2.0 = 50A 1.5 1 4 VCE = 360V Eon - MilliJoules 4 Eon - MilliJoules 3.5 5 ---- 5 I C = 100A 2.0 Eon RG = 1Ω , VGE = 15V 3.5 Eoff - MilliJoules Eon - Eoff 4.0 Eoff - MilliJoules 4.0 7 4.5 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXXN200N60B3H1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri td(on) - - - - 105 VCE = 360V I C 85 = 100A 100 75 I 80 C = 50A 65 60 55 40 45 20 35 1 2 3 4 5 6 7 8 9 52 tri VCE = 360V 50 48 = 100A 90 46 70 44 50 42 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 1Ω , VGE = 15V C I C = 50A 30 40 10 25 50 75 44 TJ = 150ºC 40 42 20 40 55 60 65 70 75 80 IC - Amperes 150 I 60 50 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 110 46 TJ = 25ºC 0 10 RG - Ohms 130 80 100 125 38 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 85 90 95 38 100 t d(on) - Nanoseconds 120 48 VCE = 360V t d(on) - Nanoseconds 95 50 td(on) - - - - RG = 1Ω , VGE = 15V 100 t r i - Nanoseconds tri TJ = 150ºC, VGE = 15V 140 t r i - Nanoseconds 120 115 160 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current IXXN200N60B3H1 Fig. 22. Typ. Forward characteristics Fig. 23. Typ. Reverse Recovery Charge Qrr vs. -diF/dt 200 20 180 18 TVJ = 150ºC 160 IF 16 TVJ = 25ºC 140 200A 14 TVJ = 150ºC 120 Qrr 100 [A] VR = 300V 12 [µC] 80 100A 10 60 8 40 6 20 4 1000 0 0 0.5 1 1.5 2 2.5 3 3.5 4 50A 1100 1200 1300 VF - [V] 1400 1500 1600 1700 Fig. 24. Typ. Peak Reverse Current IRM vs. -diF/dt 1900 Fig. 25. Typ. Recovery Time trr vs. -diF/dt 140 350 TVJ = 150ºC 200A VR = 300V TVJ = 150ºC 300 120 100A VR = 300V 250 100 trr IRM 200 50A [ns] [A] 80 200A 150 100A 60 40 1000 1800 -diF/ dt [A/µs] 100 1100 1200 1300 1400 1500 1600 1700 1800 1900 diF/dt [A/µs] 50 1000 50A 1100 1200 1300 1400 1500 1600 1700 1800 1900 -diF/dt [A/µs] Fig. 26. Typ. Recovery Energy Erec vs. -diF/dt 5 TVJ = 150ºC VR = 300V 200A 4 Erec 3 100A [mJ] 2 50A 1 0 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 -diF/dt [A/µs] © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_200N60B3(91) 6-13-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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