IXXN200N60C3H1

Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic IXXN200N60C3H1 VCES IC110 VCE(sat) tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 200 98 30 1000 A A A A IA EAS TC = 25°C TC = 25°C 100 1 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 400 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Md 50/60Hz IISOL ≤ 1mA G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z z TJ TJM Tstg VISOL Ec t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight 780 W -55 ... +150 150 -55 ... +150 °C °C °C z 2500 3000 V~ V~ z 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate miniBLOC, with Aluminium Nitride Isolation Optimized for Low Switching Losses Isolated Mounting Surface Anti-Parallel Sonic Diode 2500V~ Electrical Isolation Optimized for 20-60kHz Switching Avalanche Rated Short Circuit Capability Very High Current Capability Square RBSOA Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES V 6.0 50 μA 3 mA VCE = VCES, VGE = 0V Note 1, TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved V 1.60 1.93 ±200 nA 2.10 V V High Power Density Low Gate Drive Requirement Applications z z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100511A(02/13) IXXN200N60C3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 200A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 2 RthJC RthCS SOT-227B miniBLOC (IXXN) 35 S 9900 570 185 pF pF pF 315 134 98 nC nC nC 47 100 3.0 125 80 1.7 ns ns mJ ns ns mJ 2.6 47 96 4.0 150 90 2.1 ns ns mJ ns ns mJ 0.05 0.16 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 100A, VGE = 0V, Note 1 IRM IF = 100A, VGE = 0V, -diF/dt = 1500A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. 2.5 TJ = 150°C 2.3 V V TJ = 150°C 95 A 100 ns 0.70 °C/W RthJC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXN200N60C3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 200 VGE = 15V VGE = 15V 13V 300 12V 150 12V 250 11V IC - Amperes IC - Amperes 13V 100 10V 200 11V 150 10V 100 50 9V 9V 50 8V 7V 0 0 0.4 0.8 1.2 1.6 2 8V 7V 0 2.4 0 2 4 6 Fig. 3. Output Characteristics @ T J = 150ºC VGE = 15V 13V 12V IC - Amperes VCE(sat) - Normalized 1.4 11V 10V 100 9V 50 8V 0.8 1.2 1.6 2 2.4 2.8 I 150 175 = 200A I 1.0 C = 150A I C = 100A 0.7 -50 -25 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 6. Input Admittance 200 TJ = 25ºC 5.5 180 160 4.5 140 IC - Amperes 5.0 = 200A 3.5 150A 3.0 C 1.1 3.2 6.0 C 18 1.2 0.8 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I 16 1.3 VCE - Volts 4.0 14 0.9 7V 6V 0 0.4 12 VGE = 15V 1.5 150 0 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.6 200 VCE - Volts 8 VCE - Volts VCE - Volts 100A 120 100 2.5 60 2.0 40 1.5 20 1.0 TJ = 150ºC 25ºC 80 - 40ºC 0 9 10 11 12 13 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXN200N60C3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 110 16 100 80 12 70 10 VGE - Volts g f s - Siemens 90 VCE = 300V 14 TJ = - 40ºC, 25ºC, 150ºC 60 50 40 30 I C = 200A I G = 10mA 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 150 200 250 300 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 100,000 400 Cies 10,000 IC - Amperes Capacitance - PicoFarads f = 1 MHz 300 200 Coes 1,000 100 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns Cres 100 0 5 10 15 20 25 30 35 0 100 40 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 25µs 100µs 10 1ms 1 0.1 Z(th)JC - ºC / W ID - Amperes 100 10ms TJ = 150ºC 0.1 0.001 100ms TC = 25ºC Single Pulse DC 0.01 1 0.01 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.0001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXXN200N60C3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3.5 2.5 7 Eon - Eoff 3.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Eoff --6 TJ = 150ºC , VGE = 15V 2.0 1.5 3 I 1.0 C = 50A Eoff - MilliJoules Eoff - MilliJoules 4 I C = 100A 2 3 4 5 6 7 8 9 1.5 3 TJ = 25ºC 1.0 1 50 10 55 60 65 70 RG - Ohms 3.0 Eon 1.5 3 1.0 2 0.5 I C = 50A 0.0 75 100 125 t f i - Nanoseconds Eoff - MilliJoules 4 Eon - MilliJoules 2.0 VCE = 360V 350 90 300 I C = 50A 70 250 I 50 30 0 150 10 tfi VCE = 360V 190 140 180 120 100 2 3 4 5 140 40 130 20 120 0 70 75 80 85 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 95 110 100 t f i - Nanoseconds 150 TJ = 25ºC 65 6 7 8 9 10 180 tfi td(off) - - - - 170 RG = 1Ω , VGE = 15V VCE = 360V 100 160 80 150 I C = 100A 60 140 40 130 I C = 50A 20 120 0 25 50 75 100 TJ - Degrees Centigrade 125 110 150 t d(off) - Nanoseconds 160 TJ = 150ºC 60 200 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 170 100 55 = 100A 150 1 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - RG = 1Ω , VGE = 15V 50 C RG - Ohms 160 60 400 TJ = 150ºC, VGE = 15V 110 1 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 80 0 100 td(off) - - - - TJ - Degrees Centigrade 120 95 t d(off) - Nanoseconds I C = 100A 140 90 450 tfi 130 5 VCE = 360V 50 85 150 ---- RG = 1Ω ,  VGE = 15V 25 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 6 Eoff 75 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 2.5 2 0.0 1 1 TJ = 150ºC 0.5 2 0.5 4 VCE = 360V Eon - MilliJoules 2.0 Eon - MilliJoules 5 ---- RG = 1Ω ,   VGE = 15V VCE = 360V 2.5 Eon 5 IXXN200N60C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri td(on) - - - - tri 105 TJ = 150ºC, VGE = 15V 85 100 75 80 65 I C = 50A 60 55 40 45 t r i - Nanoseconds = 100A 80 46 TJ = 25ºC TJ = 150ºC 60 44 40 20 35 1 2 3 4 5 6 7 8 9 20 10 50 RG - Ohms 160 54 140 52 VCE = 360V 50 I 100 C = 100A 48 80 46 60 44 40 42 I C = 50A 20 0 25 50 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 1Ω  , VGE = 15V 120 55 60 65 70 75 80 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature tri 42 40 38 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 85 90 95 40 100 t d(on) - Nanoseconds C t d(on) - Nanoseconds I 120 48 VCE = 360V 95 50 td(on) - - - - RG = 1Ω  , VGE = 15V 100 VCE = 360V 140 t r i - Nanoseconds 120 115 160 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current IXXN200N60C3H1 Fig. 22. Typ. Forward characteristics Fig. 23. Typ. Reverse Recovery Charge Qrr vs. -diF/dt 200 20 180 18 TVJ = 150ºC 160 IF 16 TVJ = 25ºC 140 200A 14 TVJ = 150ºC 120 Qrr 100 [A] VR = 300V 12 [µC] 80 100A 10 60 8 40 6 20 4 1000 0 0 0.5 1 1.5 2 2.5 3 3.5 4 50A 1100 1200 1300 VF - [V] 1400 1500 1600 1700 Fig. 24. Typ. Peak Reverse Current IRM vs. -diF/dt 1900 Fig. 25. Typ. Recovery Time trr vs. -diF/dt 140 350 TVJ = 150ºC 200A VR = 300V TVJ = 150ºC 300 120 100A VR = 300V 250 100 trr IRM 200 50A [ns] [A] 80 200A 150 100A 60 40 1000 1800 -diF/ dt [A/µs] 100 1100 1200 1300 1400 1500 1600 1700 1800 1900 diF/dt [A/µs] 50 1000 50A 1100 1200 1300 1400 1500 1600 1700 1800 1900 -diF/dt [A/µs] Fig. 26. Typ. Recovery Energy Erec vs. -diF/dt 5 TVJ = 150ºC VR = 300V 200A 4 Erec 3 100A [mJ] 2 50A 1 0 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 -diF/dt [A/µs] © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_200N60C3(91)11-05-12-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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