IXXX100N60B3H1

IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V IGBTs GenX3TM w/ Diode VCES IC100 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC100 IF110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 100°C TC = 110°C TC = 25°C, 1ms 200 160 100 65 440 A A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load ICM = 200 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C 695 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g G C E PLUS247 (IXXX) G Characteristic Values Min. Typ. Max. BVCES 600 IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V 5.5 IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved V 50 μA 4 mA TJ = 125°C 1.50 1.77 C E Tab E = Emitter Tab = Collector Features z z z z z z Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages z High Power Density Low Gate Drive Requirement Applications V 3.0 G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab ±100 nA 1.80 V V z z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100285D(04/13) IXXK100N60B3H1 IXXX100N60B3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 22 VCE = 25V, VGE = 0V, f = 1MHz IC = 70A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 Inductive load, TJ = 150°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 RthJC RthCS TO-264 Outline 40 S 4860 475 83 pF pF pF 143 nC 37 nC 60 nC 30 70 1.9 120 150 2.0 ns ns mJ ns ns mJ 2.8 32 60 2.3 150 200 2.8 ns ns mJ ns ns mJ 0.15 0.18 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. TJ = 150°C 1.6 1.4 2.5 1.8 TJ = 100°C 8.3 A 140 ns V V Terminals: 1 - Gate 2 - Collector 3 - Emitter 0.30 °C/W RthJC Dim. Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK100N60B3H1 IXXX100N60B3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 140 350 VGE = 15V 13V 12V 120 VGE = 15V 11V 100 13V 250 80 10V 60 9V IC - Amperes IC - Amperes 14V 300 40 12V 200 11V 150 10V 100 8V 9V 20 50 7V 6V 0 0 0.4 0.8 1.2 1.6 2 2.4 8V 7V 0 2.8 0 2 4 6 8 Fig. 3. Output Characteristics @ T J = 150ºC VGE = 15V 13V 12V 120 IC - Amperes 80 60 9V 40 8V 7V 5V 1 1.5 2 2.5 3 1.2 18 20 150 175 = 140A C = 70A 1.0 I C = 35A 0.6 -50 3.5 -25 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 TJ = 25ºC 4.5 160 140 4.0 120 3.5 I 3.0 C IC - Amperes VCE - Volts C I VCE - Volts 5.0 16 1.4 0.8 20 0 I 1.6 10V 0.5 14 VGE = 15V 11V 100 0 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.8 VCE(sat) - Normalized 140 10 VCE - Volts VCE - Volts = 140A 2.5 80 60 70A 2.0 TJ = 150ºC 25ºC - 40ºC 100 40 1.5 20 35A 1.0 0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXK100N60B3H1 IXXX100N60B3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 25ºC 60 150ºC 50 I C = 70A I G = 10mA 12 VGE - Volts g f s - Siemens VCE = 300V 14 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 220 10,000 180 Cies 160 1,000 IC - Amperes Capacitance - PicoFarads 200 Coes 100 140 120 100 80 60 Cres 40 f = 1 MHz 20 5 10 15 20 25 30 35 RG = 2Ω dv / dt < 10V / ns 0 100 10 0 TJ = 150ºC 40 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 25µs External Lead Limit 100µs 10 1ms 1 TJ = 150ºC 0.1 0.01 10ms TC = 25ºC Single Pulse DC 0.1 1 Z (th)JC - ºC / W ID - Amperes 100 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXK100N60B3H1 IXXX100N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4.5 5 7 Eoff 4.0 Eon - Eoff --6 TJ = 150ºC , VGE = 15V 4 2.5 3 I C 2.0 3 3 4 5 6 7 1 2 8 9 10 11 12 13 14 2 TJ = 25ºC 1 0 1 2 3 2 = 50A 1.5 4 VCE = 360V TJ = 150ºC Eoff - MilliJoules Eoff - MilliJoules I C = 100A 20 15 30 40 50 RG - Ohms 5 3 2 2 I C = 50A 1 1 0 75 100 I 260 220 180 I 3 4 5 6 7 120 TJ = 25ºC 100 80 50 60 70 9 10 11 12 13 14 15 80 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved tfi 90 40 100 td(off) - - - - 240 220 RG = 2Ω , VGE = 15V 200 VCE = 360V I C = 100A 220 180 200 160 180 140 I C = 50A 160 120 140 100 120 80 100 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 200 150 50 8 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 260 280 160 40 180 = 100A 100 240 200 30 C 140 280 320 240 TJ = 150ºC 20 260 220 2 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 360V 250 = 50A 100 t f i - Nanoseconds tfi RG = 2Ω , VGE = 15V 300 C RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 350 300 140 0 150 125 340 td(off) - - - - TJ - Degrees Centigrade 400 0 100 VCE = 360V t f i - Nanoseconds 3 50 90 t d(off) - Nanoseconds I C = 100A 25 80 TJ = 150ºC, VGE = 15V 300 4 VCE = 360V Eon - MilliJoules Eoff - MilliJoules tfi ---- RG = 2Ω , VGE = 15V 4 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 340 5 Eon 60 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 5 ---- Eon - MilliJoules 5 Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 4 VCE = 360V 3.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXXK100N60B3H1 IXXX100N60B3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri VCE = 360V 140 76 120 C = 100A 60 100 52 80 44 I C = 50A 60 36 40 28 20 3 4 5 6 7 8 9 10 11 12 13 14 180 37 td(on) - - - - 36 RG = 2Ω , VGE = 15V 35 VCE = 360V 120 34 100 I C 33 = 100A 80 32 60 31 I C = 50A 40 t d(on) - Nanoseconds t r i - Nanoseconds 140 30 20 29 0 25 50 75 80 32 TJ = 150ºC, 25ºC 60 30 40 28 20 26 30 40 50 60 70 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 34 20 15 RG - Ohms tri 100 0 20 2 36 100 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 80 90 24 100 t d(on) - Nanoseconds I td(on) - - - - RG = 2Ω , VGE = 15V VCE = 360V 68 120 38 tri t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - TJ = 150ºC, VGE = 15V 140 t r i - Nanoseconds 160 84 IXXK100N60B3H1 IXXX100N60B3H1 Fig. 22. Forward Current IF Versus VF Fig. 25. Dynamic Parameters Qr, IRM Versus TVJ Fig. 23. Reverse Recovery Charge Qr Versus -diF/dt Fig. 24. Peak Reverse Current IRM Versus -diF/dt Fig. 26. Recovery Time trr Versus -diF/dt Z(th)JC - [ ºC / W ] 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width [ms] Seconds Fig. 27. 26 Maximum transient thermal impedance junction to case (for diode) © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_100N60B3(7D)12-01-11-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.