IXXX110N65B4H1

IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 110A 2.10V 43ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 IF110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 250 160 110 78 570 A A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 220 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs G = Gate C = Collector PC TC = 25°C Features 880 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G C E PLUS247 (IXXX) G        Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V V 6.5 25 A 3 mA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 110A, VGE = 15V, Note 1 TJ = 150C V 100 1.72 2.05 2.10 nA V V C E Tab E = Emitter Tab = Collector Optimized for 10-30kHz Switching Square RBSOA Short Circuit Capability Anti-Parallel Sonic Diode High Current Handling Capability International Standard Packages High Power Density Low Gate Drive Requirement Applications          ©2019 IXYS CORPORATION, All Rights Reserved G Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Tab Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100502D(4/19 ) IXXK110N65B4H1 IXXX110N65B4H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 110A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 55A, VGE = 15V VCE = 400V, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 55A, VGE = 15V VCE = 400V, RG = 2 Note 2 RthJC RthCS 52 S 5500 470 80 pF pF pF 183 nC 32 nC 83 nC 26 40 2.20 146 43 1.05 ns ns mJ ns ns mJ 1.70 25 40 3.00 140 110 2.16 ns ns mJ ns ns mJ 0.15 0.17 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 100A, VGE = 0V, Note 1 IRM IF = 100A, VGE = 0V, -diF/dt = 1500A/sVR = 300V trr Characteristic Values Min. Typ. Max. TJ = 150C 1.7 1.8 TJ = 150C 95 A 100 ns V V 0.38 C/W RthJC Notes: 2.3 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK110N65B4H1 IXXX110N65B4H1 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 500 VGE = 15V 13V 12V 200 400 160 14V 350 13V 10V I C - Amperes I C - Amperes VGE = 15V 450 11V 120 9V 80 8V 40 7V 0 300 12V 250 11V 200 150 10V 100 9V 50 8V 0 0 0.5 1 1.5 2 2.5 3 3.5 7V 0 2 4 6 8 10 2.0 VGE = 15V 14V 13V 10V 80 9V 40 VCE(sat) - Normalized I C - Amperes 120 8V 2.5 3 3.5 4 1.6 I C = 220A 1.4 1.2 I C = 110A 1.0 0.6 -50 4.5 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.5 24 I C = 55A 7V 2 22 0.8 0 1.5 20 VGE = 15V 1.8 11V 1 18 12V 160 0.5 16 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 0 14 VCE - Volts VCE - Volts 200 12 Fig. 6. Input Admittance 350 o TJ = 25 C 4.0 300 o TJ = - 40 C o 3.5 25 C 250 3.0 I C - Amperes VCE - Volts o I C = 220A 2.5 2.0 TJ = 150 C 200 150 100 110A 1.5 50 55A 0 1.0 8 9 10 11 12 VGE - Volts ©2019 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 10 VGE - Volts 11 12 13 14 15 IXXK110N65B4H1 IXXX110N65B4H1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 90 o TJ = - 40 C 80 VCE = 325V 14 I C = 110A 70 60 25 C V GE - Volts g f s - Siemens I G = 10mA 12 o 50 o 150 C 40 30 10 8 6 4 20 2 10 0 0 0 50 100 150 200 250 300 0 350 20 40 I C - Amperes 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 240 10,000 Cies 200 1,000 I C - Amperes Capacitance - PicoFarads 60 Coes 160 120 80 100 o Cres TJ = 150 C 40 RG = 2Ω dv / dt < 10V / ns f = 1 MHz 10 0 0 5 10 15 1 20 25 VCE - Volts 30 35 40 100 200 300 400 Fig. 13. Maximum Transient Thermal Impedance 500 600 700 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) AAAAA 0.3 Z(th)JC - K / W 0.1 D = 0.5 D = 0.2 D = 0.1 0.01 D = tp / T D = 0.05 tp D = 0.02 D = 0.01 T Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1.E-01 1.E+00 1.E+01 IXXK110N65B4H1 IXXX110N65B4H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 7 Eoff 6 Eon o 14 6 12 5 TJ = 150 C , VGE = 15V 10 3 6 2 4 I C = 55A 1 4 6 8 10 12 14 o TJ = 150 C 4 6 o TJ = 25 C 2 Eoff 2 50 16 12 55 60 65 70 2 4 0 100 tfi 100 80 250 I C = 55A 60 150 20 100 50 3 4 5 6 o TJ = 25 C 40 120 20 90 95 I C - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 100 105 100 110 t f i - Nanoseconds t f i - Nanoseconds 140 85 7 8 9 10 11 12 13 14 15 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) 240 220 RG = 2Ω , VGE = 15V VCE = 400V 200 100 180 80 160 I C = 55A, 110A 60 140 40 120 20 100 0 25 50 75 100 TJ - Degrees Centigrade 125 80 150 t d(off) - Nanoseconds 60 t d(off) - Nanoseconds 160 80 200 40 120 o 75 300 I C = 110A 140 TJ = 150 C 70 400 350 200 180 65 450 120 160 220 td(off) 100 60 500 VCE = 400V 2 VCE = 400V 55 0 110 RG - Ohms RG = 2Ω , VGE = 15V 50 105 0 0 150 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 80 100 td(off) TJ - Degrees Centigrade 120 95 2 I C = 55A 140 90 o t f i - Nanoseconds 6 75 85 t d(off) - Nanoseconds I C = 110A 3 E on - MilliJoules 8 50 80 TJ = 150 C, VGE = 15V 140 4 E off - MilliJoules tfi 160 10 VCE = 400V 25 75 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 180 Eon RG = 2Ω , VGE = 15V 1 4 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 5 8 3 RG - Ohms 6 10 0 0 2 Eon RG = 2Ω , VGE = 15V 1 2 0 12 E on - MilliJoules 8 E on - MilliJoules 4 Eoff VCE = 400V E off - MilliJoules VCE = 400V 5 E off - MilliJoules I C = 110A Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXK110N65B4H1 IXXX110N65B4H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 180 td(on) 100 180 90 160 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current tri o TJ = 150 C, VGE = 15V 140 70 120 60 100 50 I C = 55A 80 40 140 36 VCE = 400V o TJ = 25 C 120 33 100 30 80 27 o TJ = 150 C 60 24 60 30 40 21 40 20 20 18 10 0 20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 50 RG - Ohms tri 60 td(on) RG = 2Ω , VGE = 15V 160 50 VCE = 400V 40 I C = 110A 80 30 I C = 55A 20 0 25 t d(on) - Nanoseconds 120 40 50 75 100 55 60 65 70 75 80 85 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 200 t r i - Nanoseconds 39 RG = 2Ω , VGE = 15V 125 10 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 90 95 100 105 15 110 t d(on) - Nanoseconds I C = 110A t r i - Nanoseconds 80 VCE = 400V t d(on) - Nanoseconds t r i - Nanoseconds 160 td(on) 42 IXXK110N65B4H1 IXXX110N65B4H1 Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt Fig. 21. Typ. Forward characteristics 20 200 o TVJ = 150 C 175 VR = 300V 16 150 IF = 200A o TVJ = 25 C o TVJ = 150 C 12 Q RM [μC] I F [A] 125 100 100A 8 75 50A 50 4 25 0 1000 0 0 0.5 1 1.5 2 2.5 3 1200 1400 1800 2000 Fig. 24. Typ. Recovery Time trr vs. -diF/dt Fig. 23. Typ. Peak Reverse Current IRM vs. -diF/dt 350 140 IF = 200A o TVJ = 150 C 120 1600 -diF/ dt [A/μs] VF - [V] o TVJ = 150 C VR = 300V VR = 300V 300 250 100A trr [ns] I RM [A] 100 50A 80 200 IF = 200A 150 100A 60 100 40 1000 1200 1400 1600 1800 50A 50 1000 2000 diF/dt [A/μs] 1200 1400 1600 1800 2000 -diF/dt [A/μs] Fig. 26. Maximum Transient Thermal Impedance (Diode) Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt 1 5 o TVJ = 150 C IF = 200A VR = 300V D = 0.5 3 Z (th)JC - K / W E rec [mJ] 4 100A 2 0.1 D = 0.2 D = 0.1 D = 0.05 D = tp / T D = 0.02 0.01 tp D = 0.01 50A 1 0 1000 1200 1400 1600 -diF/dt [A/μs] ©2019 IXYS CORPORATION, All Rights Reserved 1800 Single Pulse 2000 0.001 1.E-05 1.E-04 T 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Pulse Width - Seconds IXYS REF: IXX_110N65B4 (E8-RZ43) 4-12-19-A IXXK110N65B4H1 IXXX110N65B4H1 PLUS247 Outline PINS: 1 - Gate 2,4 - Collector 3 - Emitter TO-264 Outline PINS: 1 - Gate 2,4 - Collector 3 - Emitter IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXXK110N65B4H1 IXXX110N65B4H1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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