IXXX160N65B4

XPTTM 650V IGBTs GenX4TM IXXK160N65B4 IXXX160N65B4 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 160A 1.80V 90ns TO-264 (IXXK) G C E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC= 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms 310 160 160 860 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 320 @V CE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive 10 µs PC TC = 25°C 940 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C TJ TJM Tstg TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in. N/lb. 10 6 g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC 6.5 V 1.54 1.85 1.80 C E Tab E = Emitter Tab = Collector Features     Optimized for 10-30kHz Switching Square RBSOA Short Circuit Capability International Standard Packages High Current Handling Capability Advantages      25 A 1.5 mA 200 G G = Gate C = Collector  = 160A, VGE = 15V, Note 1 TJ = 150C © 2021 Littelfuse, Inc. G High Power Density Low Gate Drive Requirement Applications V TJ = 150C IGES PLUS247 (IXXX)  20..120 /4.5..27 Tab nA     Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100517B(1/21) IXXK160N65B4 IXXX160N65B4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 160A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 400V, RG = 1 Note 2 Inductive load, TJ = 150°C IC = 80A, VGE = 15V VCE = 400V, RG = 1 Note 2 RthJC RthCS Notes: 70 S 8220 500 295 pF pF pF 425 82 193 nC nC nC 52 64 3.30 220 90 1.88 ns ns mJ ns ns mJ 3.00 43 50 4.30 220 160 2.36 ns ns mJ ns ns mJ 0.15 0.16 °C/W °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK160N65B4 IXXX160N65B4 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 320 350 VGE = 15V 13V 12V 11V 280 10V 10V 240 250 200 IC - Amperes IC - Amperes VGE = 15V 12V 11V 300 9V 160 120 9V 150 100 8V 80 200 8V 50 40 7V 0 0 0.5 1 1.5 2 2.5 7V 0 3 0 1 2 3 4 6 7 8 9 10 150 175 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 2.2 320 VGE = 15V 13V 12V 280 V GE = 15V 2.0 11V 200 1.8 VCE(sat) - Normalized 240 I C - Amperes 5 VCE - Volts VCE - Volts 10V 160 9V 120 I C = 320A 1.6 1.4 1.2 I C = 160A 1.0 80 8V 0.8 40 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 I C = 80A 0.6 -50 4 -25 0 VCE - Volts 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 4.5 180 TJ = 25oC 4.0 160 3.5 TJ = - 40oC 25oC 3.0 I C - Amperes VCE - Volts 140 I C = 320A 2.5 2.0 160A TJ = 150oC 120 100 80 60 1.5 40 80A 1.0 20 0.5 0 7 8 9 10 11 VGE - Volts © 2021 Littelfuse, Inc. 12 13 14 15 4 5 6 7 VGE - Volts 8 9 10 IXXK160N65B4 IXXX160N65B4 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40oC VCE = 325V I C = 160A I G = 10mA 14 100 80 60 VGE - Volts g f s - Siemens 12 25oC 150oC 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 200 250 300 350 400 450 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 350 Cies 300 250 1,000 C oes I C - Amperes Capacitance - PicoFarads 150 QG - NanoCoulombs I C - Amperes 200 150 100 50 Cres f = 1 MHz TJ = 150oC RG = 1Ω dv / dt < 10V / ns 0 100 0 5 10 15 20 25 100 200 3011. Maximum 35 40 Fig. Transient Thermal Impedance VCE - Volts 1 300 400 500 600 700 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXXK160N65B4 IXXX160N65B4 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 5.0 3.4 9 Eoff Eon TJ = 150ºC , VGE = 15V VCE = 400V 4.5 4.0 8 7 Eoff Eon RG = 1Ω , VGE = 15V VCE = 400V 3.0 7 6 5 2.5 4 2.0 3 I C = 40A 1.5 1 0.5 3 4 5 6 7 8 4 1.8 3 TJ = 25oC 1.4 2 1.0 1 0.6 0 2 2.2 2 1.0 1 5 TJ = 150oC 9 0 40 10 50 60 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff Eon RG = 1Ω ,V GE = 15V VCE = 400V 1.6 2.5 1.4 2.0 1.2 t f i - Nanoseconds 3.0 600 200 500 I C = 40A 180 400 I C = 80A 160 300 140 200 t d(off) - Nanoseconds 3.5 I C = 80A 700 220 4.0 2.0 td(off) TJ = 150oC, VGE = 15V VCE = 400V 240 4.5 Eon - MilliJoules 1.5 I C = 40A 1.0 1.0 0.8 120 0.5 25 50 75 100 125 100 1 150 2 3 4 5 6 7 8 9 T J - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 300 td(off) RG = 1Ω , VGE = 15V VCE = 400V 280 220 160 220 120 TJ = 25oC 300 180 280 I C = 40A 160 260 140 240 120 220 I C = 80A 100 200 320 200 80 80 180 40 50 60 70 I C - Amperes © 2021 Littelfuse, Inc. 80 90 40 100 180 60 160 25 50 75 100 TJ - Degrees Centigrade 125 150 t d(off) - Nanoseconds 240 td(off) RG = 1Ω , VGE = 15V VCE = 400V 200 200 TJ = 150oC 340 tfi 240 t d(off) - Nanoseconds 260 10 240 280 tfi t f i - Nanoseconds Eoff - MilliJoules 100 800 tf i 5.0 2.2 t f i - Nanoseconds 90 260 5.5 1.8 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.8 2.4 70 I C - Amperes RG - Ohms 2.6 Eon - MilliJoules 3.0 Eoff - MilliJoules 6 I C = 80A Eon - MilliJoules Eoff - MilliJoules 2.6 3.5 IXXK160N65B4 IXXX160N65B4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 140 100 I C = 80A 80 70 I C = 40A 60 40 50 20 40 0 30 2 3 4 5 6 7 8 9 td(on) 65 70 60 55 TJ = 25oC 60 50 50 45 TJ = 150oC 40 40 30 35 20 30 10 10 40 RG - Ohms 50 60 70 80 90 t d(on) - Nanoseconds 80 1 tri RG = 1Ω , VGE = 15V VCE = 400V 80 100 60 70 90 90 t d(on) - Nanoseconds t r i - Nanoseconds td(on) TJ = 150oC, V GE = 15V V CE = 400V t r i - Nanoseconds tri 120 100 25 100 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 90 57 tri 80 70 54 51 60 48 I C = 80A 50 45 40 42 30 39 I C = 40A 20 36 10 t d(on) - Nanoseconds t r i - Nanoseconds t d(on) RG = 1Ω , VGE = 15V VCE = 400V 33 0 30 25 50 75 100 125 150 TJ - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXX_160N65B4(E9) 1-7-21 IXXK160N65B4 IXXX160N65B4 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 3 L1 C L A1 b1 J M C A M b b2 c e 0P1 BACK SIDE A 4 0P = Gate 2,4 = Collector 3 = Emitter 1 PLUS247 Outline 1 - Gate 2,4 - Collector 3 - Emitter © 2021 Littelfuse, Inc. KM D BM IXXK160N65B4 IXXX160N65B4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions, and dimensions.