IXXX160N65C4

Preliminary Technical Information XPTTM 650V IGBTs GenX4TM IXXK160N65C4 IXXX160N65C4 VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 160A 2.1V 30ns TO-264 (IXXK) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC= 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms 290 160 160 800 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 320 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C 940 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 650 VGE(th) IC = 250μA, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC V G = 160A, VGE = 15V, Note 1 TJ = 150°C © 2012 IXYS CORPORATION, All Rights Reserved 1.7 2.1 G C E G = Gate C = Collector Tab E = Emitter Tab = Collector Features z z z z z Optimized for 20-60kHz Switching Square RBSOA Short Circuit Capability International Standard Packages High Current Handling Capability Advantages z z z z z z 25 μA 1.5 mA TJ = 150°C IGES PLUS247 (IXXX) High Power Density Low Gate Drive Requirement Applications V 6.5 Tab ±200 nA 2.1 V V z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100516A(02/13) IXXK160N65C4 IXXX160N65C4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 43 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 160A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 400V, RG = 1Ω Note 2 Inductive load, TJ = 150°C IC = 80A, VGE = 15V VCE = 400V, RG = 1Ω Note 2 RthJC RthCS TO-264 Outline 72 S 8270 510 290 pF pF pF 422 77 202 nC nC nC 52 67 3.50 197 30 1.30 ns ns mJ ns ns mJ 2.00 43 52 4.40 170 57 1.30 ns ns mJ ns ns mJ 0.15 0.16 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK160N65C4 IXXX160N65C4 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 320 VGE = 15V 13V 12V 11V 280 240 VGE = 15V 12V 11V 300 10V 10V 250 200 IC - Amperes IC - Amperes 350 9V 160 120 8V 200 9V 150 8V 100 80 40 50 7V 7V 0 0 0.5 1 1.5 2 2.5 0 3 0 2 4 VCE - Volts 2.2 VGE = 15V 14V 13V 12V 280 10 12 VGE = 15V 2.0 240 11V 200 VCE(sat) - Normalized IC - Amperes 8 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 320 6 VCE - Volts 10V 160 9V 120 1.8 I C = 320A 1.6 1.4 I 1.2 C = 160A 1.0 80 8V 0.8 40 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 I C = 80A 0.6 -50 4 -25 0 VCE - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 5.0 180 TJ = 25ºC 4.5 160 TJ = - 40ºC 25ºC 140 3.5 IC - Amperes VCE - Volts 4.0 3.0 I C = 320A 2.5 TJ = 150ºC 120 100 80 60 2.0 160A 40 1.5 20 80A 1.0 0 7 8 9 10 11 12 13 14 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 15 16 17 4 5 6 7 VGE - Volts 8 9 10 IXXK160N65C4 IXXX160N65C4 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40ºC VCE = 325V 14 100 I C = 160A I G = 10mA 25ºC 80 60 VGE - Volts g f s - Siemens 12 150ºC 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 150 Fig. 9. Capacitance 250 300 350 400 450 Fig. 10. Reverse-Bias Safe Operating Area 10,000 350 Cies 300 250 IC - Amperes Capacitance - PicoFarads 200 QG - NanoCoulombs IC - Amperes 1,000 Coes 200 150 100 TJ = 150ºC Cres f = 1 MHz 50 100 0 5 10 15 20 VCE - Volts 25 30 35 0 100 40 RG = 1Ω dv / dt < 10V / ns 200 300 Fig. 11. Maximum Transient Thermal Impedance 400 500 600 700 VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaaa 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXK160N65C4 IXXX160N65C4 Eoff Eon - Eoff 2.2 8 VCE = 400V 2 4 1 I C 2 = 40A 0 3 4 5 6 7 8 9 6 1.8 1.4 4 TJ = 25ºC 1.0 0.2 40 10 50 60 70 1.8 ---- RG = 1Ω , VGE = 15V VCE = 400V 8 140 7 120 6 1.0 4 0.8 3 I C = 40A 0.6 2 0.4 1 0.2 125 600 VCE = 400V I C 500 = 80A 80 I C 400 = 40A 60 300 40 200 20 100 0 150 0 0 1 2 3 4 5 6 7 8 9 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature td(off) - - - - RG = 1Ω , VGE = 15V VCE = 400V 210 120 80 105 70 90 75 TJ = 150ºC 190 60 180 45 TJ = 25ºC 170 30 tfi td(off) - - - - RG = 1Ω , VGE = 15V 210 VCE = 400V 50 220 200 I C = 40A 40 190 30 180 I C = 80A 20 170 I C = 40A 160 15 TJ = 150ºC 150 40 50 60 70 80 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 90 0 100 10 160 0 25 50 75 100 TJ - Degrees Centigrade 125 150 150 t d(off) - Nanoseconds 200 10 230 60 t d(off) - Nanoseconds t f i - Nanoseconds 100 td(off) - - - - TJ = 150ºC, VGE = 15V TJ - Degrees Centigrade tfi 220 75 t f i - Nanoseconds 230 50 tfi 700 t d(off) - Nanoseconds 5 I C = 80A Eon - MilliJoules 1.2 25 1 100 90 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 100 t f i - Nanoseconds 1.4 Eoff - MilliJoules Eon 80 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 3 2 RG - Ohms 1.6 5 TJ = 150ºC 0.6 0 2 ---- Eon - MilliJoules 6 I C = 80A Eon RG = 1Ω , VGE = 15V VCE = 400V Eon - MilliJoules 3 1 7 --- TJ = 150ºC , VGE = 15V 4 2.6 10 Eoff - MilliJoules 5 Eoff - MilliJoules Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance IXXK160N65C4 IXXX160N65C4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 140 td(on) - - - - VCE = 400V I C 80 60 60 40 40 I C = 40A 20 0 1 2 3 4 5 6 7 8 9 80 60 TJ = 25ºC 60 50 40 40 TJ = 150ºC 20 20 0 70 VCE = 400V 100 = 80A td(on) - - - - RG = 1Ω , VGE = 15V 30 0 10 40 RG - Ohms t d(on) - Nanoseconds 80 100 t d(on) - Nanoseconds 100 80 tri 120 TJ = 150ºC, VGE = 15V t r i - Nanoseconds tri 120 t r i - Nanoseconds 120 140 50 60 70 80 90 20 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 60 tri 70 td(on) - - - - RG = 1Ω , VGE = 15V 55 60 50 I 50 C = 80A 45 40 40 I C = 40A 30 35 20 30 10 25 50 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 400V 25 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_160N65C4(E9)12-12-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.