IXXX300N60B3

Advance Technical Information XPTTM 600V IGBTs GenX3TM IXXK300N60B3 IXXX300N60B3 VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 300A 1.6V 95ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC= 25°C (Chip Capability) Leads Current Limit TC = 110°C (Chip Capability) TC = 25°C, 1ms 550 160 300 1140 A A A A IA EAS TC = 25°C TC = 25°C 100 500 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 600 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C 2300 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G C E PLUS247 (IXXX) G Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC V = 100A, VGE = 15V, Note 1 TJ = 150°C © 2012 IXYS CORPORATION, All Rights Reserved 1.3 1.4 E Tab E = Emitter Tab = Collector Features z z z z z z Optimized for 10-30kHz Switching Square RBSOA International Standard Packages Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages z z z z 25 μA 2.5 mA TJ = 150°C C High Power Density Low Gate Drive Requirement Applications V 5.5 G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab ±200 nA 1.6 V V z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100503(10/12) IXXK300N60B3 IXXX300N60B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 TO-264 Outline 50 S nF pF pF Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 13.3 757 246 Qg Qge Qgc IC = 300A, VGE = 15V, VCE = 0.5 • VCES 460 137 196 nC nC nC 50 87 3.45 190 95 2.86 ns ns mJ ns ns mJ td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 400V, RG = 1Ω Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 400V, RG = 1Ω Note 2 RthJC RthCS 4.40 50 87 4.47 230 200 3.70 ns ns mJ ns ns mJ 0.15 0.065 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK300N60B3 IXXX300N60B3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 300 350 VGE = 15V 13V VGE = 15V 13V 12V 300 11V 200 150 10V 9V 100 11V 250 IC - Amperes IC - Amperes 250 12V 200 10V 150 9V 100 8V 50 8V 50 7V 0 0 0.4 0.8 1.2 1.6 2 2.4 0 2.8 7V 0 1 2 3 4 6 7 8 9 10 150 175 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 300 1.6 VGE = 15V 13V 12V VGE = 15V 11V 1.4 VCE(sat) - Normalized 250 IC - Amperes 5 VCE - Volts VCE - Volts 200 10V 150 9V 100 50 7V 0 0.5 1 1.5 2 2.5 3 C = 300A 1.2 I C = 200A 1.0 I 0.8 8V 0 I C = 100A 0.6 -50 3.5 -25 0 25 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 5.0 180 TJ = 25ºC 4.5 160 4.0 I C IC - Amperes VCE - Volts 140 3.5 = 300A 3.0 2.5 - 40ºC 100 80 60 200A 2.0 TJ = 150ºC 25ºC 120 40 1.5 20 100A 0 1.0 9 10 11 12 13 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXK300N60B3 IXXX300N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40ºC, 25ºC, 150ºC VCE = 300V 14 100 I C = 300A I G = 10mA 80 VGE - Volts g f s - Siemens 12 60 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 150 200 IC - Amperes 300 350 400 450 500 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 700 100,000 f = 1 MHz 600 500 10,000 Cies IC - Amperes Capacitance - PicoFarads 250 QG - NanoCoulombs Coes 1,000 400 300 200 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns 100 Cres 100 0 5 10 15 20 25 30 35 0 100 40 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Maximum Transient Thermal Impedance 10,000 0.1 VCE(sat) Limit IC - Amperes Z(th)JC - ºC / W 1,000 0.01 100 25µs External Lead Current Limit 100µs 10 1ms TJ = 175ºC 1 10ms 100ms TC = 25ºC Single Pulse 0.001 0.00001 DC 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VCE - Volts 1000 IXXK300N60B3 IXXX300N60B3 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eon - --I C = 100A VCE = 400V 4.0 7 Eoff 4.0 TJ = 150ºC , VGE = 15V 6 4 2.5 2.0 I C VCE = 400V 5 TJ = 150ºC 3.0 1.0 2.5 3 TJ = 25ºC 2 2 3 4 5 6 7 8 9 1 1.0 0 1 50 10 55 60 65 70 RG - Ohms Eon ---- RG = 1Ω ,  VGE = 15V VCE = 400V I C = 100A 380 6 340 5 300 Eon - MilliJoules 2 180 1 140 0 150 100 1.0 75 100 125 td(off) - - - - VCE = 400V 600 I 2 3 4 5 td(off) - - - 350 250 200 TJ = 25ºC 100 150 50 80 9 10 85 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 90 95 100 100 td(on) - - - 320 VCE = 400V 200 280 I C = 50A 150 240 100 200 I C = 100A 50 25 50 75 100 TJ - Degrees Centigrade 125 160 150 t d(off) - Nanoseconds 300 200 75 8 RG = 1Ω , VGE = 15V 250 t d(off) - Nanoseconds TJ = 150ºC 70 7 360 tfi VCE = 400V 65 6 300 t f i - Nanoseconds tfi RG = 1Ω , VGE = 15V 60 300 = 100A Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 400 55 C RG - Ohms 350 50 = 50A 100 1 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 150 C 200 TJ - Degrees Centigrade 300 700 400 2.0 I C = 50A tfi TJ = 150ºC, VGE = 15V 220 3 250 0 100 500 2.5 50 95 260 4 25 90 800 I 3.0 1.5 85 t d(off) - Nanoseconds 3.5 7 t f i - Nanoseconds Eoff 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 4.5 4.0 75 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules 4 1.5 1.5 t f i - Nanoseconds 6 2.0 2 = 50A ---- Eon - MilliJoules 3.0 Eon - MilliJoules 3.5 Eon RG = 1Ω ,   VGE = 15V 3.5 Eoff - MilliJoules Eoff 4.5 Eoff - MilliJoules 4.5 8 IXXK300N60B3 IXXX300N60B3 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 120 120 tri 140 td(on) - - - - tri 110 100 TJ = 150ºC, VGE = 15V VCE = 400V C = 100A 80 80 60 70 I C = 50A 40 60 20 50 t r i - Nanoseconds I 90 54 VCE = 400V 80 52 60 50 TJ = 25ºC 40 48 TJ = 150ºC 20 0 2 3 4 5 6 7 8 9 46 0 40 1 50 10 t d(on) - Nanoseconds 100 td(on) - - - - RG = 1Ω , VGE = 15V 100 t d(on) - Nanoseconds t r i - Nanoseconds 120 56 55 60 65 70 75 80 85 90 95 44 100 IC - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 53 tri 140 52 VCE = 400V 120 51 I C = 100A 100 50 80 49 60 48 40 47 I C = 50A 20 46 0 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 1Ω , VGE = 15V 125 45 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_300N60B3(9D)10-10-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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