IXYA20N120A4HV

IXYA20N120A4HV IXYP20N120A4 1200V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = 1200V 20A 1.9V 160ns TO-263HV (IXYA..HV) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM G Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 80 20 135 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 40 0.8 • VCES A PC TC = 25°C 375 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 10..65 / 22..14.6 Nm/lb.in N/lb 2.5 3.0 g g VCE  TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md FC Mounting Torque (TO-220) Mounting Force (TO-263HV) Weight TO-263HV TO-220 E C (Tab) TO-220 (IXYP) G C G = Gate E = Emitter E C (Tab) D = Collector Tab = Collector Features    Optimized for Low Conduction Losses Positive Thermal Coefficient of Vce(sat) International Standard Packages Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V  VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C © 2020 IXYS CORPORATION, All Rights Reserved V 25 A 5 mA TJ = 150C IGES Applications V 6.5 100 1.65 1.94 1.90 High Power Density Low Gate Drive Requirement nA V V        Power Inverters UPS Motor Drives SMPS Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100925B(2/20) IXYA20N120A4HV IXYP20N120A4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 20A, VCE = 10V, Note 1 7 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Notes: Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 0.8 • VCES, RG = 10 Note 2 Inductive load, TJ = 125°C IC = 20A, VGE = 15V VCE = 0.8 • VCES, RG = 10 Note 2 TO-220 12 S 880 57 30 pF pF pF 46 7 21 nC nC nC 12 54 3.60 275 160 2.75 ns ns mJ ns ns mJ 14 36 4.50 360 286 4.85 ns ns mJ ns ns mJ 0.50 0.40 °C/W °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYA20N120A4HV IXYP20N120A4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 40 VGE = 15V 13V 12V 35 11V 100 10V 80 V GE = 15V 14V 30 I C - Amperes I C - Amperes 13V 25 9V 20 15 8V 12V 60 11V 40 10V 10 20 5 0 8V 7V 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 40 2.0 V GE = 15V 14V 13V 12V 30 11V 1.8 10V 1.6 18 20 150 175 VGE = 15V I C = 40A VCE(sat) - Normalized 35 I C - Amperes 9V 7V 25 20 9V 15 8V 10 1.4 1.2 I C = 20A 1.0 7V 0.8 5 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 I C = 10A 0.6 4 -50 -25 0 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.0 25 Fig. 6. Input Admittance 60 o o TJ = 25 C TJ = - 40 C 50 3.5 o 25 C o TJ = 150 C 40 I C - Amperes VCE - Volts 3.0 I C = 40A 2.5 2.0 30 20 20A 1.5 10 10A 1.0 0 7 8 9 10 11 12 VGE - Volts © 2020 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 11 12 13 IXYA20N120A4HV IXYP20N120A4 Fig. 7. Transconductance Fig. 8. Gate Charge 18 16 o TJ = - 40 C 16 14 I C = 20A I G = 10mA 12 12 o 25 C V GE - Volts g f s - Siemens VCE = 600V 14 10 o 150 C 8 6 10 8 6 4 4 2 2 0 0 0 10 20 30 40 50 0 5 10 15 I C - Amperes 20 25 30 35 40 45 50 1100 1200 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 1,000 45 Cies 40 Capacitance - PicoFarads 35 I C - Amperes 30 100 Coes 25 20 15 10 Cres f = 1 MHz 5 10 o TJ = 150 C RG = 10Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 35 40 200 300 400 500 Fig.3011. Maximum Transient Thermal Impedance VCE - Volts 600 700 800 900 1000 VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaa Z (th)JC - K / W 0.6 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYA20N120A4HV IXYP20N120A4 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 16 12 32 Eoff 14 Eon Eoff 28 o 10 TJ = 125 C , VGE = 15V VCE = 960V 8 16 6 12 4 8 30 40 50 60 70 o TJ = 125 C 6 4 4 o TJ = 25 C 15 20 25 14 340 12 320 35 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance tfi 800 td(off) o 700 TJ = 125 C, VGE = 15V VCE = 960V I C = 20A 8 8 6 6 4 4 300 600 I C = 20A 280 260 500 400 I C = 40A t d(off) - Nanoseconds 10 t f i - Nanoseconds VCE = 960V 14 E on - MilliJoules Eoff - MilliJoules Eon RG = 10Ω,VGE = 15V 10 30 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 2 0 10 80 RG - Ohms 12 6 0 0 20 8 4 0 10 8 2 I C = 20A 2 Eoff - MilliJoules 20 10 VCE = 960V Eon - MilliJoules I C = 40A 10 Eon RG = 10Ω,VGE = 15V 24 Eon - MilliJoules Eoff - MilliJoules 12 12 I C = 40A 2 240 2 0 25 50 75 220 0 125 100 300 200 10 20 30 12 t d(off) RG = 10Ω,VGE = 15V tfi 4 4 o 2 TJ = 25 C 0 0 15 20 25 30 I C - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 35 40 VCE = 960V 280 t f i - Nanoseconds t f i - Nanoseconds 6 450 400 I C = 20A 240 350 200 300 I C = 40A 160 250 120 200 80 25 50 75 TJ - Degrees Centigrade 100 150 125 t d(off) - Nanoseconds o TJ = 125 C t d(off) - Nanoseconds 8 td(off) RG = 10Ω, VGE = 15V VCE = 960V 10 80 500 320 10 8 2 70 360 12 6 60 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 50 RG - Ohms TJ - Degrees Centigrade 10 40 IXYA20N120A4HV IXYP20N120A4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 280 100 tri 60 120 40 I C = 20A 30 40 20 0 30 40 50 60 70 tri 40 12 20 9 6 15 20 25 30 35 40 VCE = 960V 32 28 24 I C = 40A 80 20 60 16 40 15 o TJ = 125 C 12 I C = 20A 20 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 10Ω, VGE = 15V 100 60 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 18 10 80 RG - Ohms 140 80 0 10 20 21 o TJ = 25 C t d(on) - Nanoseconds 50 80 td(on) RG = 10Ω, VGE = 15V VCE = 960V 160 10 24 I C = 40A VCE = 960V 200 70 t d(on) - Nanoseconds t r i - Nanoseconds t d(on) o TJ = 125 C, VGE = 15V 120 t r i - Nanoseconds tri 240 80 8 0 25 50 75 100 4 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_20N120A4 (Y14-Ry92) 8-20-18 IXYA20N120A4HV IXYP20N120A4 TO-263HV Outline 1 = Gate 2 = Emitter 3 = Collector TO-220 Outline 1 = Gate 2 = Collector 3 = Emitter © 2020 IXYS CORPORATION, All Rights Reserved IXYA20N120A4HV IXYP20N120A4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.