IXYA20N120B4HV

IXYA20N120B4HV IXYP20N120B4 1200V XPTTM GenX4TM IGBT Extreme Light Punch Throungh IGBT for up to 5 - 30kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = 1200V 20A 2.1V 90ns TO-263HV (IXYA..HV) G Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM E Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 76 20 130 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 40 VCE  0.8 • VCES A PC TC = 25°C 375 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md FC Mounting Torque (TO-220) Mounting Force (TO-263HV) Weight TO-263HV TO-220 1.13/10 10..65 / 22..14.6 Nm/lb.in N/lb 2.5 3.0 g g C (Tab) TO-220 (IXYP) G C G = Gate E = Emitter E C (Tab) D = Collector Tab = Collector Features    Optimized for 5-30kHz Switching Positive Thermal Coefficient of Vce(sat) International Standard Packages Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V V 6.5 25 A 5 mA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C © 2020 IXYS CORPORATION, All Rights Reserved V 100 1.83 2.18 2.10 nA V V High Power Density Low Gate Drive Requirement Applications        Power Inverters UPS Motor Drives SMPS Battery Chargers Welding Machines Lamp Ballasts DS100926B(2/20) IXYA20N120B4HV IXYP20N120B4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 7.5 IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Notes: Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 0.8 • VCES, RG = 10 Note 2 Inductive load, TJ = 125°C IC = 20A, VGE = 15V VCE = 0.8 • VCES, RG = 10 Note 2 TO-220 12.5 S 890 58 33 pF pF pF 44 8 20 nC nC nC 15 47 3.9 200 90 1.6 ns ns mJ ns ns mJ 13 35 4.6 270 170 2.7 ns ns mJ ns ns mJ 0.50 0.40 °C/W °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYA20N120B4HV IXYP20N120B4 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 40 VGE = 15V 13V 12V 35 11V 14V 10V 30 80 25 I C - Amperes I C - Amperes VGE = 15V 100 9V 20 15 8V 13V 12V 60 11V 40 10V 10 20 5 0 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 40 2.0 VGE = 15V 13V 12V 35 18 20 150 175 VGE = 15V 1.8 11V I C = 40A VCE(sat) - Normalized 30 10V I C - Amperes 9V 7V 25 20 9V 15 8V 10 7V 1.6 1.4 I C = 20A 1.2 1.0 0.8 5 I C = 10A 6V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.0 25 Fig. 6. Input Admittance 60 o o TJ = 25 C TJ = - 40 C 3.5 50 3.0 40 o 25 C o I C - Amperes VCE - Volts TJ = 150 C I C = 40A 2.5 20A 2.0 30 20 10 1.5 10A 0 1.0 7 8 9 10 11 12 VGE - Volts © 2020 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 11 12 13 IXYA20N120B4HV IXYP20N120B4 Fig. 8. Gate Charge Fig. 7. Transconductance 16 18 o 16 TJ = - 40 C 14 I C = 20A I G = 10mA 12 12 o 25 C V GE - Volts g f s - Siemens VCE = 600V 14 10 8 o 150 C 6 10 8 6 4 4 2 2 0 0 0 10 20 30 40 50 0 5 10 15 I C - Amperes 20 25 30 35 40 45 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 1,000 45 Cies 40 Capacitance - PicoFarads 35 I C - Amperes 30 100 Coes 25 20 15 10 Cres f = 1 MHz 5 10 0 5 10 15 20 VCE - Volts 25 30 35 0 200 40 o TJ = 150 C RG = 10Ω dv / dt < 10V / ns 300 400 500 Fig. 11. Maximum Transient Thermal Impedance 600 700 800 900 1000 1100 1200 VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaa Z (th)JC - K / W 0.6 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYA20N120B4HV IXYP20N120B4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 12 Eoff 10 7 26 Eon 4 10 2 Eoff - MilliJoules 14 10 4 8 o TJ = 125 C 3 6 2 4 Eon - MilliJoules I C = 40A 6 E on - MilliJoules 18 12 VCE = 960V 5 8 Eon RG = 10Ω,VGE = 15V VCE = 960V E off - MilliJoules Eoff 6 22 o TJ = 125 C , VGE = 15V 14 o 6 TJ = 25 C 1 2 I C = 20A 0 2 10 20 30 40 50 60 70 0 80 0 10 15 20 25 RG - Ohms Eoff 7 Eon 16 220 14 200 12 180 tfi 4 8 3 6 td(off) 500 o VCE = 960V 450 160 400 I C = 20A 140 350 I C = 40A 120 300 4 100 250 2 80 200 0 125 60 2 t d(off) - Nanoseconds 10 E on - MilliJoules 5 t f i - Nanoseconds VCE = 960V 550 TJ = 125 C, VGE = 15V I C = 40A Eoff - MilliJoules 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance RG = 10Ω,VGE = 15V 6 35 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 8 30 I C = 20A 1 0 25 50 75 100 150 10 20 30 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 240 td(off) tfi 400 250 200 o TJ = 25 C t f i - Nanoseconds t f i - Nanoseconds 120 300 120 250 I C = 20A 80 200 I C = 40A 40 40 150 150 0 100 10 15 20 25 30 I C - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 35 40 0 25 50 75 TJ - Degrees Centigrade 100 100 125 t d(off) - Nanoseconds 300 350 VCE = 960V t d(off) - Nanoseconds 350 160 80 80 td(off) RG = 10Ω, VGE = 15V 160 VCE = 960V o TJ = 125 C 70 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 200 450 RG = 10Ω,VGE = 15V 200 60 RG - Ohms T J - Degrees Centigrade 280 50 IXYA20N120B4HV IXYP20N120B4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 320 tri 280 120 80 t d(on) tri 70 100 o TJ = 125 C, VGE = 15V 50 160 40 I C = 40A 120 30 80 20 40 0 30 40 50 60 70 20 60 16 o TJ = 125 C 40 12 20 8 4 15 20 25 30 35 40 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri 100 30 td(on) RG = 10Ω, VGE = 15V 26 VCE = 960V 80 22 60 18 40 14 t d(on) - Nanoseconds I C = 40A t r i - Nanoseconds TJ = 25 C 80 10 80 RG - Ohms 120 o 0 0 20 24 VCE = 960V 10 I C = 20A 10 td(on) t d(on) - Nanoseconds 200 28 RG = 10Ω, VGE = 15V 60 t r i - Nanoseconds VCE = 960V t d(on) - Nanoseconds t r i - Nanoseconds 240 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current I C = 20A 20 10 0 25 50 75 100 6 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_20N120B4 (Y14-RY92) 8-21-18 IXYA20N120B4HV IXYP20N120B4 TO-263HV Outline 1 = Gate 2 = Emitter 3 = Collector TO-220 Outline 1 = Gate 2 = Collector 3 = Emitter © 2020 IXYS CORPORATION, All Rights Reserved IXYA20N120B4HV IXYP20N120B4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.