IXYB82N120C3H1
1200V XPTTM IGBT
GenX3TM w/ Diode
VCES =
IC110 =
VCE(sat)
tfi(typ) =
High-Speed IGBT
for 20-50 kHz Switching
1200V
82A
3.2V
93ns
PLUS264TM
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
1200
1200
V
V
Continuous
Transient
±20
±30
V
V
IC25
ILRMS
IC110
IF110
ICM
TC = 25°C (Chip Capability)
Lead Current Limit
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
164
160
82
42
320
A
A
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 2
Clamped Inductive Load
ICM = 164
@VCE VCES
A
PC
TC = 25°C
1040
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
30..120 / 6.7..27
N/lb.
10
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
FC
Mounting Force
Weight
G
C
E
Tab
G = Gate
E = Emitter
C
= Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
Positive Thermal Coefficient of
Vce(sat)
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250A, VGE = 0V
1200
VGE(th)
IC
= 250A, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = 20V
VCE(sat)
IC
= 82A, VGE = 15V, Note 1
TJ = 125C
© 2018 IXYS CORPORATION, All Rights Reserved
V
5.0
V
50 A
3 mA
TJ = 125C
IGES
100
2.75
3.50
3.20
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
nA
V
V
DS100355F(7/18)
IXYB82N120C3H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
30
IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 82A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
Inductive load, TJ = 125°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
RthJC
RthCS
PLUS264TM (IXYB) Outline
50
S
4060
285
110
pF
pF
pF
215
26
84
nC
nC
nC
29
78
4.95
192
93
2.78
ns
ns
mJ
ns
ns
mJ
280
5.00
29
90
7.45
200
95
3.70
ns
ns
mJ
ns
ns
mJ
0.13
0.12 °C/W
°C/W
Pin 1 = Gate
Pin 2,4 = Collector
Pin 3 = Emitter
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VF
IRM
trr
IF = 60A, VGE = 0V, Note 1
IF = 60A, VGE = 0V,
-diF/dt = 700A/μs, VR = 600V
Characteristic Values
Min.
Typ.
Max.
2.7
TJ = 125°C
TJ = 125°C
1.9
V
V
41
A
420
ns
RthJC
Notes:
0.35 °C/W
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYB82N120C3H1
o
o
Fig. 2. Extended Output Characteristics @ TJ = 25 C
Fig. 1. Output Characteristics @ TJ = 25 C
300
160
VGE = 15V
13V
11V
10V
9V
140
250
100
80
11V
10V
9V
200
8V
I C - Amperes
I C - Amperes
120
VGE = 15V
13V
12V
7V
60
150
8V
100
7V
6V
40
50
20
6V
5V
0
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
2.2
VGE = 15V
13V
11V
10V
9V
VGE = 15V
2.0
I C = 164A
1.8
VCE(sat) - Normalized
I C - Amperes
120
30
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
o
Fig. 3. Output Characteristics @ TJ = 125 C
140
25
VCE - Volts
VCE - Volts
160
20
8V
100
80
7V
60
40
1.6
1.4
I C = 82A
1.2
1.0
0.8
6V
I C = 41A
20
0.6
5V
0
0
1
2
3
4
5
0.4
-50
6
-25
0
VCE - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
160
8.5
o
TJ = 25 C
7.5
140
120
5.5
I C - Amperes
VCE - Volts
6.5
I C = 164A
4.5
80
60
o
TJ = 125 C
82A
3.5
100
40
o
25 C
o
- 40 C
2.5
20
41A
1.5
0
5
6
7
8
9
10
11
12
VGE - Volts
© 2018 IXYS CORPORATION, All Rights Reserved
13
14
15
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
7.5
8.0
IXYB82N120C3H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
80
16
o
TJ = - 40 C
70
60
I C = 82A
I G = 10mA
12
o
25 C
50
V GE - Volts
g f s - Siemens
VCE = 600V
14
o
125 C
40
30
10
8
6
20
4
10
2
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
I C - Amperes
80
100
120
140
160
180
200
220
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
180
10,000
140
120
1,000
I C - Amperes
Capacitance - PicoFarads
160
Cies
Coes
100
100
80
60
Cres
40
o
TJ = 125 C
20
f = 1 MHz
10
RG = 2Ω
0
0
5
10
15
20
25
30
35
40
200
400
600
800
1000
1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - K / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
IXYB82N120C3H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
8
Eon
VCE = 600V
6
4.0
4
8
3
6
9
8
VCE = 600V
3.5
7
o
3.0
6
TJ = 125 C
2.5
5
2.0
4
E on - MilliJoules
10
E on - MilliJoules
I C = 80A
Eon
RG = 2ΩVGE = 15V
12
5
10
Eoff
4.5
14
o
TJ = 125 C , VGE = 15V
E off - MilliJoules
7
E off - MilliJoules
5.0
16
Eoff
o
2
TJ = 25 C
4
1.5
3
2
1.0
2
0
0.5
I C = 40A
1
0
2
4
6
8
10
12
14
16
40
18
50
60
VCE = 600V
8
180
7
160
6
I C = 80A
2.5
5
2.0
4
I C = 40A
1.5
0.5
50
75
100
780
tfi
td(off)
700
o
TJ = 125 C, VGE = 15V
3
1.0
25
VCE = 600V
620
140
540
I C = 40A
120
460
100
380
80
2
60
1
125
40
300
I C = 80A
4
6
8
240
240
14
16
18
230
200
280
tfi
td(off)
td(off)
RG = 2Ω, VGE = 15V
260
VCE = 600V
VCE = 600V
160
210
o
TJ = 125 C
120
200
80
190
160
240
I C = 40A
120
220
I C = 80A
80
200
o
TJ = 25 C
40
180
0
40
50
60
70
80
I C - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved
90
170
100
40
180
0
25
50
75
TJ - Degrees Centigrade
100
160
125
t d(off) - Nanoseconds
220
t d(off) - Nanoseconds
t f i - Nanoseconds
12
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
t f i - Nanoseconds
tfi
RG = 2Ω, VGE = 15V
200
10
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
240
220
140
2
TJ - Degrees Centigrade
280
1
100
t d(off) - Nanoseconds
3.0
200
t f i - Nanoseconds
Eon
RG = 2ΩVGE = 15V
9
E on - MilliJoules
E off - MilliJoules
4.5
3.5
90
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff
80
I C - Amperes
RG - Ohms
4.0
70
IXYB82N120C3H1
tri
140
VCE = 600V
40
60
35
40
30
I C = 40A
20
25
0
6
8
10
12
14
16
40
o
TJ = 125 C
80
30
o
TJ = 25 C
60
20
40
10
20
20
4
100
40
18
50
60
70
80
90
t d(on) - Nanoseconds
80
50
VCE = 600V
t d(on) - Nanoseconds
45
I C = 80A
td(on)
RG = 2Ω, VGE = 15V
120
50
100
2
60
tri
55
o
TJ = 125 C, VGE = 15V
120
140
60
td(on)
t r i - Nanoseconds
160
t r i - Nanoseconds
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
100
I C - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
140
36
tri
34
RG = 2Ω, VGE = 15V
VCE = 600V
100
32
80
I C = 80A
30
60
28
40
26
I C = 40A
20
0
25
50
75
100
t d(on) - Nanoseconds
t r i - Nanoseconds
120
td(on)
24
22
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_82N120C3(8M)12-13-12-A
IXYB82N120C3H1
Fig. 22. Reverse Recovery Charge Qrr vs. -diF/dt
Fig. 21. Forward Characteristics
12
120
o
o
TVJ = 25 C
100
VR = 600V
120A
10
o
TVJ = 125 C
80
9
Qrr - [μC]
IF - [A]
TVJ = 125 C
11
60
60A
8
7
40
6
20
30A
5
0
4
0
0.5
1
1.5
2
2.5
3
600
700
800
VF - Volts
900
1000
1100
1200
1300
-diF/dt - [A/μs]
Fig. 23. PeakReverse Current IRM vs. -diF/dt
Fig. 24. Recovery Time trr vs. -diF/dt
90
700
o
TVJ = 125 C
80
o
TVJ = 125 C
120A
VR = 600V
VR = 600V
600
60
60A
50
30A
trr - [ns]
IRM - [A]
70
500
400
120A
40
60A
300
30A
30
200
20
600
700
800
900
1000
1100
1200
600
1300
700
-diF/dt - [A/μs]
800
900
1000
1100
1200
1300
-diF/dt - [A/μs]
Fig. 25. Recovery Energy Erec vs. -diF/dt
Fig. 26. Maximum Transient Thermal Impedance
1
4.0
o
3.6
TVJ = 125 C
120A
VR = 600V
Z(th)JC - K / W
Erec - [mJ]
3.2
2.8
60A
2.4
2.0
1.6
0.1
30A
1.2
0.8
600
700
800
900
1000
1100
-diF/dt - [A/μs]
© 2018 IXYS CORPORATION, All Rights Reserved
1200
1300
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.