IXYF30N450

Advance Technical Information High Voltage XPTTM IGBT IXYF30N450 VCES = 4500V IC110 = 17A VCE(sat)  3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M 4500 V VGES Continuous ± 20 V VGEM Transient ± 30 V 1 5 IC25 TC = 25°C 23 A IC110 TC = 110°C 17 A ICM TC = 25°C, 1ms 190 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load ICM = 90 3600 A V PC TC = 25°C 230 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C  20..120 / 4.5..27 Nm/lb.in.  TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds FC Mounting Force VISOL 50/60Hz, 1 Minute Weight 4000 V~ 5 g 1 = Gate 2 = Emitter     BVCES IC = 250μA, VGE = 0V 4500 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V Note 2, TJ = 100°C IGES VCE = 0V, VGE = ± 25V VCE(sat) IC = 30A, VGE = 15V, Note 1 3.2 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved 4.5 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Low Gate Drive Requirement High Power Density Applications V 5.0 V 25 μA μA 100 5 = Collector Advantages  Characteristic Values Min. Typ. Max. Isolated Tab Features  Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) 2 ±200 nA 3.9 V      Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100569(11/13) IXYF30N450 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 11 Cies ISOPLUS i4-PakTM (HV) Outline 18 S 1840 pF 83 pF Cres 35 pF Qg 88 nC 11 nC 40 nC Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 30A, VGE = 15V VCE = 960V, RG = 15 Resistive Switching Times, TJ = 125°C IC = 30A, VGE = 15V VCE = 960V, RG = 15 38 ns 318 ns 168 ns 1220 ns 42 ns 590 ns 180 ns 1365 ns RthJC Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated 0.54 °C/W RthCS 0.15 °C/W Notes: 1. Pulse test, t < 300s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYF30N450 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 280 60 VGE = 25V 19V 15V 13V 11V 50 VGE = 25V 23V 21V 240 19V 17V 200 I C - Amperes I C - Amperes 40 9V 30 15V 160 13V 120 20 11V 80 7V 10 9V 40 7V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 5 10 15 60 2.4 VGE = 25V 19V 15V 13V 11V 2.2 VCE(sat) - Normalized I C - Amperes 30 VGE = 15V 2.0 40 9V 30 20 7V I C = 60A 1.8 1.6 I C = 30A 1.4 1.2 1.0 I C = 15A 0.8 10 0.6 5V 0 0.4 0 1 2 3 4 5 6 -50 7 -25 0 VCE - Volts 25 50 75 125 150 Fig. 6. Input Admittance 80 TJ = 25ºC 70 7 TJ = - 40ºC 25ºC 125ºC 60 I C - Amperes 6 I C = 60A 5 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 VCE - Volts 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 50 20 VCE - Volts VCE - Volts 50 40 30 4 30A 20 15A 10 3 0 2 6 7 8 9 10 11 12 13 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 14 15 3.5 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 10 IXYF30N450 Fig. 7. Transconductance Fig. 8. Gate Charge 30 16 TJ = - 40ºC VCE = 1000V 14 25 I C = 30A I G = 10mA 25ºC 15 125ºC VGE - Volts g f s - Siemens 12 20 10 10 8 6 4 5 2 0 0 0 10 20 30 40 50 60 70 0 80 10 20 30 I C - Amperes 50 60 70 80 90 Reverse-Bias Safe Safe Operating Operating Area Area Fig. 10. Reverse-Bias Fig. 9. Capacitance 10,000 100 100 f = 1 MHz 90 90 80 80 70 70 Cies 1,000 IICC -- Amperes Amperes Capacitance Capacitance -- PicoFarads PicoFarads 40 QG - NanoCoulombs Coes C oes 100 100 60 60 50 50 40 40 30 30 20 20 Cres C res 10 10 10 10 0 0 5 5 10 10 15 15 20 20 25 25 30 30 35 35 40 40 00 500 500 125ºC TTJJ == 125ºC RG = 15Ω 15Ω G= R dv // dt dt