IXYH100N65C3

Preliminary Technical Information XPTTM 650V IGBT GenX3TM IXYH100N65C3 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 100A 2.3V 60ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C ( Chip Capability ) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 200 160 100 420 A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 200 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive 7 μs PC TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight        IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved  6.0 V 25 750 A A 100 nA TJ = 150C IGES  V 1.8 2.2 2.3 Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability International Standard Package High Power Density Low Gate Drive Requirement Applications  BVCES C = Collector Tab = Collector Advantages  Characteristic Values Min. Typ. Max. Tab E Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C G = Gate E = Emitter  TJ TJM Tstg TL TSOLD G    Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100561B(10/14) IXYH100N65C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 100A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS Notes: TO-247 (IXYH) Outline 55 S 4780 280 102 pF pF pF 172 nC 30 nC 80 nC 23 42 1.30 107 60 0.83 ns ns mJ ns ns mJ 1.30 24 38 2.55 134 66 1.15 ns ns mJ ns ns mJ 0.21 0.18 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH100N65C3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 140 VGE = 15V 13V 12V 11V 120 300 10V VGE = 15V 13V 12V 250 11V 200 80 9V I C (A) I C (A) 100 60 8V 40 20 10V 150 100 9V 50 8V 7V 0 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 140 2.0 VGE = 15V 13V 12V 11V VCE(sat) - Normalized 9V 80 8V 60 40 7V 20 16 18 20 150 175 I C = 140A 1.6 1.4 I C = 70A 1.2 1.0 0.8 I C = 35A 6V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 0 25 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 5.5 Fig. 6. Input Admittance 200 TJ = 25ºC 180 5.0 160 4.5 140 4.0 120 3.5 I C (A) V CE (V) 14 VGE = 15V 1.8 10V 100 I C (A) 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 120 10 VCE - Volts VCE - Volts I C = 140A 3.0 100 TJ = 150ºC 25ºC - 40ºC 80 2.5 70A 2.0 60 40 1.5 35A 1.0 20 0.5 0 7 8 9 10 11 12 VGE (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE (V) 9 10 11 IXYH100N65C3 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 TJ = - 40ºC 80 70 25ºC 12 150ºC 10 VGE (V) 60 g f s (S) VCE = 325V 14 50 40 I C = 70A I G = 10mA 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 I C (A) QG (nC) Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 200 Cies I C (A) Capacitance (pF) 160 1,000 Coes 120 80 100 Cres TJ = 150ºC 40 RG = 3Ω dv / dt < 10V / ns f = 1 MHz 10 0 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE (V) VCE (V) Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance (IGBT) 1000 1 VCE(sat) Limit I D (A) 25µs 100µs 10 Z (th)JC - ºC / W 100 1ms 1 0.1 0.01 TJ = 175ºC 10ms DC TC = 25ºC Single Pulse 0.1 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 IXYH100N65C3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 6 Eoff 5 Eon - 4.0 12 --- Eoff 3.5 10 TJ = 150ºC , VGE = 15V 6 E off (mJ) 5 2.0 4 TJ = 150ºC 1.5 3 1.0 I C = 50A 1 2 0 6 9 12 15 18 21 24 27 30 2 TJ = 25ºC 0.5 1 0.0 0 3 50 33 55 60 65 70 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 5 Eon 7 160 4 2 3 0 100 1 2 0 75 100 700 600 140 500 120 400 I C = 100A 300 I C = 50A 200 60 100 40 1 150 125 800 td(off) - - - - 80 I C = 50A 0 3 6 9 12 15 18 21 24 27 30 33 RG (Ω) TJ (ºC) Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 160 180 td(off) - - - - tfi 140 160 RG = 3Ω , VGE = 15V VCE = 400V td(off) - - - - 150 140 RG = 3Ω , VGE = 15V VCE = 400V 120 130 140 80 100 120 I C = 100A 80 110 I C = 50A 100 TJ = 25ºC 60 80 40 50 55 60 65 70 75 80 85 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 90 95 60 100 60 100 40 90 20 25 50 75 100 TJ (ºC) 125 80 150 t d(off) (ns) 120 t d(off) (ns) TJ = 150ºC 100 t f i (ns) 120 t f i (ns) 95 VCE = 400V 100 140 90 t d(off) (ns) 3 E on (mJ) I C = 100A t f i (ns) 5 160 85 TJ = 150ºC, VGE = 15V VCE = 400V Eoff (mJ) tfi 180 6 4 50 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 200 ---- RG = 3Ω , VGE = 15V 25 75 I C (A) RG (Ω) 6 Eon (mJ) 4 E on (mJ) 2 7 2.5 I C = 100A 6 ---- VCE = 400V 3.0 8 3 Eon 8 RG = 3Ω , VGE = 15V VCE = 400V 4 E off (mJ) Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYH100N65C3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 240 tri 200 120 140 100 120 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri td(on) - - - - TJ = 150ºC, VGE = 15V td(on) - - - 30 RG = 3Ω , VGE = 15V VCE = 400V VCE = 400V 120 60 I C = 100A 80 100 t r i (ns) 80 28 80 26 TJ = 150ºC 40 60 20 40 0 20 TJ = 25ºC t d(on) (ns) 160 t d(on) (ns) t r i (ns) 32 24 I C = 50A 40 0 3 6 9 12 15 18 21 24 27 30 33 22 50 55 60 RG (Ω) 140 tri 120 VCE = 400V td(on) - - - - 90 95 20 100 90 32 80 26 60 24 I C = 50A 40 I C - Amperes 70 28 t d(on) (ns) t r i (ns) 85 Fig. 22. Maximum Peak Load Current vs. Frequency 80 20 0 75 100 Triangular Wave 60 50 TJ = 150ºC 40 TC = 75ºC 30 VCE = 400V 20 VGE = 15V 10 RG = 3Ω D = 0.5 22 20 50 80 30 I C = 100A 25 75 100 34 RG = 3Ω , VGE = 15V 100 70 I C (A) Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 65 125 18 150 TJ (ºC) Square Wave 0 10 100 1,000 fmax (kH) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_100N65C3(7D-Y42) 10-14-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.