IXYH10N170CV1

Advance Technical Information IXYH10N170CV1 High Voltage XPTTM IGBT w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = 1700V 10A 3.8V 70ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM Continuous Transient IC25 IC110 IF110 ICM TC TC TC TC SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 1700 1700 V V ±20 ±30 V V 36 10 22 84 A A A A ICM = 40 1360 A V 280 W -55 ... +175 175 -55 ... +175 °C °C °C Features 300 260 °C °C  1.13/10 Nm/lb.in. 6 g Weight G   BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 10A, VGE = 15V, Note 1 TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved. V 25 A 5 mA TJ = 150C 100 3.2 4.4 3.8 C = Collector Tab = Collector High Voltage Package High Blocking Voltage Low Saturation Voltage Low Gate Drive Requirement High Power Density Applications V 5.0 Tab Advantages  Characteristic Values Min. Typ. Max. E G = Gate E = Emitter  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C      nA Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V V DS100784(1/17) IXYH10N170CV1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 10A, VCE = 10V, Note 1 5.4 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff TO-247 (IXYH) Outline 9.0 VCE = 25V, VGE = 0V, f = 1MHz 10  930 74 20 pF pF pF 46 6 22 nC nC nC 14 17 1.4 130 70 0.7 ns ns mJ ns ns mJ 15 6 2.3 166 94 0.9 ns ns mJ ns ns mJ 0.21 0.53 °C/W °C/W IC = 10A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 10A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 10A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 RthJC RthCS S D A A2 B E Q R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 10A,VGE = 0V, Note 1 IRM IF = 10A,VGE = 0V, -diF/dt = 400A/μs, trr VR = 1200V, TJ = 150°C 3.0 TJ = 150°C 2.4 V V 18 A 160 ns RthJC Notes: 0.70 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH10N170CV1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 20 90 VGE = 15V VGE = 15V 12V 10V 9V 18 16 80 14V 70 8V 12 10 8 7V 6 12V 11V 50 40 10V 30 9V 20 4 6V 2 8V 10 0 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 6 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.2 20 VGE = 15V 12V 10V 9V 16 1.8 14 8V 12 10 7V 8 6 I C = 20A 1.6 1.4 I C = 10A 1.2 1.0 6V 4 0.8 2 30 VGE = 15V 2.0 VCE(sat) - Normalized 18 I C - Amperes 13V 60 I C - Amperes I C - Amperes 14 I C = 5A 5V 0.6 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 50 Fig. 6. Input Admittance 36 33 TJ = 25ºC 7 30 27 24 I C - Amperes VCE - Volts 6 I C = 20A 5 10A 4 21 18 15 12 TJ = 150ºC 25ºC 9 - 40ºC 6 3 5A 3 0 2 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved. 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXYH10N170CV1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 16 TJ = - 40ºC 14 12 I C = 10A I G = 10mA 12 25ºC 10 V GE - Volts g f s - Siemens VCE = 850V 14 150ºC 8 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 I C - Amperes Fig. 9. Capacitance 25 30 35 40 45 50 Fig. 10. Reverse-Bias Safe Operating Area 10,000 45 f = 1 MHz 40 35 Cies 1,000 30 I C - Amperes Capacitance - PicoFarads 20 QG - NanoCoulombs Coes 25 20 15 100 TJ = 150ºC 10 RG = 10Ω dv / dt < 10V / ns 5 Cres 10 0 0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 1400 1600 1800 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH10N170CV1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.0 Eoff 3.5 Eon 8 4.0 7 3.5 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Eoff 2.5 I C = 20A 5 2.0 4 1.5 3 1.0 3.0 Eoff - MilliJoules E off - MilliJoules 6 0.5 0.0 40 50 60 70 6 VCE = 850V 2.5 4 1.5 3 1.0 1 0.5 0 0.0 TJ = 25ºC 0 10 80 12 14 16 18 Eoff 6 130 5 120 1.0 2 tfi 600 td(off) 500 50 75 100 125 110 400 I C = 20A 100 1 80 100 0 150 70 0 10 20 30 40 tfi 60 70 td(off) Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 140 220 tfi 200 120 RG = 10Ω, VGE = 15V 80 80 140 60 120 TJ = 25ºC 100 100 160 I C = 10A 80 140 60 120 I C = 20A 40 20 100 80 0 60 10 12 14 16 18 20 22 24 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 26 28 30 20 25 50 75 100 TJ - Degrees Centigrade 125 80 150 t d(off) - Nanoseconds 160 180 VCE = 850V t d(off) - Nanoseconds VCE = 850V TJ = 150ºC 200 td(off) RG = 10Ω, VGE = 15V 180 t f i - Nanoseconds 120 50 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 300 I C = 10A 200 TJ - Degrees Centigrade t f i - Nanoseconds 30 90 I C = 10A 0.0 t f i - Nanoseconds E off - MilliJoules 3 40 28 t d(off) - Nanoseconds I C = 20A 1.5 Eon - MilliJoules 4 100 26 VCE = 850V 2.0 160 24 TJ = 150ºC, VGE = 15V VCE = 850V 25 22 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eon RG = 10ΩVGE = 15V 0.5 20 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 2.5 2 1 RG - Ohms 3.0 5 TJ = 150ºC 2.0 2 I C = 10A 30 7 E on - MilliJoules VCE = 850V E on - MilliJoules 3.0 20 Eon RG = 10ΩVGE = 15V TJ = 150ºC , VGE = 15V 10 8 IXYH10N170CV1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 50 tri td(on) 35 TJ = 150ºC, VGE = 15V 30 25 20 20 I C = 10A 10 0 50 60 70 tri 12 12 14 16 18 20 22 24 26 28 30 18 17 VCE = 850V 16 20 15 I C = 20A 15 14 10 13 13 I C = 10A 5 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 10Ω, VGE = 15V 25 14 TJ = 25ºC I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 30 20 10 80 RG - Ohms 35 15 TJ = 150ºC 0 10 40 30 10 15 30 16 t d(on) - Nanoseconds I C = 20A 30 20 td(on) VCE = 850V 40 10 17 RG = 10Ω, VGE = 15V 40 t d(on) - Nanoseconds VCE = 850V t r i - Nanoseconds 50 40 t r i - Nanoseconds 60 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 12 0 25 50 75 100 125 11 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_10N170C(3T-AT653) 1-26-17 IXYH10N170CV1 Fig. 22. Reverse Recovery Charge vs. -diF/dt Fig. 21. Diode Forward Characteristics 2.6 50 TJ = 150ºC VR = 1200V 2.2 40 I F = 20A TJ = 25ºC Q RR (µC) 30 I F (A) TJ = 150ºC 20 10 1.8 15A 10A 1.4 1.0 0 0.6 0 1 2 3 4 5 200 6 400 600 800 1000 1200 1400 1600 -diF/ dt (A/µs) VF (V) Fig. 23. Reverse Recovery Current vs. -diF/dt Fig. 24. Reverse Recovery Time vs. -diF/dt 200 35 TJ = 150ºC TJ = 150ºC VR = 1200V 30 VR = 1200V 180 I F = 20A I RR (A) 10A tRR (ns) 15A 25 20 160 I F = 20A 140 15A 15 120 10 10A 100 200 400 1.1 600 800 1000 1200 1400 1600 200 400 600 800 1000 1200 1400 diF/dt (A/µs) -diF/dt (A/µs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature Fig. 26. Maximum Transient Thermal Impedance (Diode) 1 1600 VR = 1200V Z(th)JC - K / W I F = 10A -diF/dt = 400A/µs 1.0 KF 0.9 0.8 KF QRR KF IRR 0.7 0.6 0 20 40 60 80 100 TJ (ºC) © 2017 IXYS CORPORATION, All Rights Reserved. 120 140 160 0.1 0.0001 0.001 0.01 Pulse Width - Second 0.1 1