IXYH12N250CV1HV

Advance Technical Information IXYH12N250CV1HV High Voltage XPTTM IGBT w/ Diode Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM Continuous Transient IC25 IC110 IF110 ICM TC TC TC TC SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load PC TC = 25°C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 2500 2500 V V ±20 ±30 V V 28 12 14 80 A A A A ICM = 48 1500 A V 310 W -55 ... +175 175 -55 ... +175 °C °C °C Features 300 260 °C °C  1.13/10 Nm/lb.in. 6 g Weight 2500V 12A 4.50V 136ns TO-247HV (IXYH) Maximum Ratings = 25°C = 110°C = 110°C = 25°C, 1ms VCES = IC110 = VCE(sat)  tfi(typ) = G E C G = Gate E = Emitter    C (Tab) C = Collector Tab = Collector High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 2500 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC V 5.0 25 A 3.5 mA TJ = 150C = 12A, VGE = 15V, Note 1 TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved. V 100 3.70 5.55 4.50 nA V V Low Gate Drive Requirement High Power Density Applications      Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100792(2/17) IXYH12N250CV1HV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 12A, VCE = 10V, Note 1 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. 7 VCE = 25V, VGE = 0V, f = 1MHz VCE = 0.5 • VCES, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 12A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 RthJC RthCS E R 12 S 7.5  1370 65 16 pF pF pF 56 6 28 nC nC nC 12 16 3.56 167 136 1.70 ns ns mJ ns ns mJ 12 20 4.78 195 138 1.95 ns ns mJ ns ns mJ 0.21 0.48 °C/W °C/W IC = 12A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 12A, VGE = 15V TO-247HV Outline 0P A A2 E1 0P1 Q S D1 D 4 D2 1 2 3 L1 D3 L e e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector 3X Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 12A,VGE = 0V, Note 1 IRM IF = 12A,VGE = 0V, -diF/dt = 500A/μs, trr VR = 1200V, TJ = 150°C 4.5 TJ = 150°C 4.2 V V 22 A 165 ns RthJC Notes: 0.80 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXYH12N250CV1HV Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 24 20 VGE = 15V 140 VGE = 15V 12V 10V 9V 14V 120 8V 13V 100 I C - Amperes I C - Amperes 16 12 7V 8 4 6V 80 11V 60 10V 40 9V 8V 20 0 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 0 4 8 12 16 24 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.4 VGE = 15V 12V 10V 9V 2.2 16 7V 12 28 VGE = 15V 2.0 8V VCE(sat) - Normalized 20 8 6V 1.8 I C = 24A 1.6 1.4 I C = 12A 1.2 1.0 4 I C = 6A 0.8 5V 0.6 0 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 VCE - Volts 25 50 75 100 125 150 175 7.5 8.0 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 9 Fig. 6. Input Admittance 35 TJ = 25ºC 8 30 25 6 I C - Amperes 7 VCE - Volts 20 VCE - Volts 24 I C - Amperes 12V I C = 24A 5 20 15 12A 4 10 3 5 6A TJ = 150ºC 25ºC - 40ºC 0 2 5 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved. 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 IXYH12N250CV1HV Fig. 7. Transconductance Fig. 8. Gate Charge 16 20 TJ = - 40ºC 18 VCE = 1250V 14 I C = 12A 16 25ºC 12 10 V GE - Volts g f s - Siemens 14 I G = 10mA 12 150ºC 8 10 8 6 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 f = 1 MHz 50 1,000 40 I C - Amperes Capacitance - PicoFarads Cies Coes 100 10 30 20 Cres TJ = 150ºC 10 1 RG = 10Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 250 500 750 1000 1250 1500 1750 2000 2250 2500 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH12N250CV1HV Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eoff 7 6 18 Eon 16 3 8 2 6 I C = 12A 1 4 0 2 10 7 20 30 40 50 60 70 8 3 6 TJ = 25ºC 2 4 1 2 0 0 6 80 8 10 12 190 14 Eon 20 22 10 170 6 2 4 I C = 12A 2 0 75 100 150 140 350 I C = 12A 130 300 120 250 110 200 100 150 100 10 20 30 40 240 240 220 200 tfi 180 TJ = 25ºC 80 40 14 16 18 20 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 22 24 t f i - Nanoseconds 200 TJ = 150ºC 12 70 80 230 td(off) RG = 10Ω, VGE = 15V 210 160 190 I C = 12A 120 170 I C = 24A 160 80 140 40 150 25 50 75 100 TJ - Degrees Centigrade 125 130 150 t d(off) - Nanoseconds 160 10 60 VCE = 1250V t d(off) - Nanoseconds VCE = 1250V 8 50 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature td(off) RG = 10Ω, VGE = 15V 120 400 I C = 24A RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 500 450 TJ - Degrees Centigrade 200 550 td(off) 90 0 150 125 600 VCE = 1250V 160 Eon - MilliJoules 3 50 tfi TJ = 150ºC, VGE = 15V 24 t d(off) - Nanoseconds I C = 24A 8 25 180 12 1 t f i - Nanoseconds 18 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4 6 16 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature VCE = 1250V 240 14 I C - Amperes RG = 10ΩVGE = 15V 5 TJ = 150ºC 4 RG - Ohms Eoff 6 E off - MilliJoules Eoff - MilliJoules 10 t f i - Nanoseconds Eoff - MilliJoules 4 10 E on - MilliJoules 12 Eon VCE = 1250V E on - MilliJoules 5 12 RG = 10ΩVGE = 15V 14 I C = 24A VCE = 1250V Eoff 5 TJ = 150ºC , VGE = 15V 6 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH12N250CV1HV Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 100 tri td(on) 50 TJ = 150ºC, VGE = 15V t r i - Nanoseconds 30 I C = 24A 40 20 I C = 12A 20 0 40 50 60 70 12 TJ = 25ºC 10 8 8 10 12 14 16 18 20 22 24 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri TJ = 150ºC 20 6 80 RG - Ohms 50 14 0 0 30 30 10 10 60 16 t d(on) - Nanoseconds 40 20 td(on) RG = 10Ω, VGE = 15V 40 t d(on) - Nanoseconds 80 10 18 VCE = 1250V VCE = 1250V 60 50 60 t r i - Nanoseconds 120 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 16 td(on) 15 RG = 10Ω, VGE = 15V 40 14 I C = 24A 30 13 20 12 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 1250V I C = 12A 10 11 0 25 50 75 100 125 10 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_12N250CV1HV(4P-AT628) 1-31-17 IXYH12N250CV1HV Fig. 21. Diode Forward Characteristics Fig. 22. Reverse Recovery Charge vs. -diF/dt 5 50 TJ = 150ºC VR = 1200V 4 40 I F = 24A TJ = 25ºC Q RR (µC) 30 I F (A) TJ = 150ºC 20 10 3 12A 2 6A 1 0 0 0 1 2 3 4 5 6 7 8 9 10 300 500 700 900 1100 1300 1500 -diF/ dt (A/µs) VF (V) Fig. 23. Reverse Recovery Current vs. -diF/dt Fig. 24. Reverse Recovery Time vs. -diF/dt 300 60 TJ = 150ºC TJ = 150ºC VR = 1200V 50 I F = 24A I RR (A) tRR (ns) 12A 40 VR = 1200V 250 6A 200 I F = 24A 30 150 20 100 12A 10 6A 50 300 500 1.1 700 900 1100 1300 1500 300 500 700 900 1100 1300 diF/dt (A/µs) -diF/dt (A/µs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature Fig. 26. Maximum Transient Thermal Impedance (Diode) 1 1500 VR = 1200V I F = 12A -diF/dt = 500A/µs 1.0 KF Z(th)JC - K / W 0.9 KF QRR 0.8 KF IRR 0.7 0.6 0 20 40 60 80 100 TJ (ºC) © 2017 IXYS CORPORATION, All Rights Reserved. 120 140 160 0.1 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1