IXYH16N170CV1

Advance Technical Information IXYH16N170CV1 High Voltage XPTTM IGBT w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = 1700V 16A 3.8V 120ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1700 1700 V V Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 40 16 22 100 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 64 1360 A V PC TC = 25°C 310 W -55 ... +175 175 -55 ... +175 °C °C °C Features 300 260 °C °C  1.13/10 Nm/lb.in. 6 g = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G   BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0.8 • VCES, VGE = 0V, IGES VCE = 0V, VGE = 20V VCE(sat) IC = 16A, VGE = 15V, Note 1 TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved. V 25 A 5 mA TJ = 150C 100 3.2 4.4 3.8 C = Collector Tab = Collector High Voltage Package High Blocking Voltage Low Saturation Voltage Low Gate Drive Requirement High Power Density Applications V 5.0 Tab Advantages  Characteristic Values Min. Typ. Max. E G = Gate E = Emitter  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C      nA Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V V DS100786(1/17) IXYH16N170CV1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 16A, VCE = 10V, Note 1 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. 7 TO-247 (IXYH) Outline 12 VCE = 25V, VGE = 0V, f = 1MHz 7  1165 88 23 pF pF pF 56 7 27 nC nC nC 11 19 2.10 140 120 1.50 ns ns mJ ns ns mJ 15 20 2.90 175 140 1.95 ns ns mJ ns ns mJ 0.21 0.48°C/W °C/W IC = 16A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 16A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 16A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 RthJC RthCS S D A A2 B E Q R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 16A,VGE = 0V, Note 1 IRM IF = 16A,VGE = 0V, -diF/dt = 500A/μs, trr VR = 1200V, TJ = 150°C 3.3 TJ = 150°C 3.0 V V 22 A 150 ns RthJC Notes: 0.70 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH16N170CV1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 32 120 VGE = 15V 13V 12V 11V 10V 28 100 14V 13V 80 8V 20 I C - Amperes I C - Amperes 24 VGE = 15V 9V 16 12 7V 12V 11V 60 10V 40 9V 8 6V 0 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.2 32 VGE = 15V 13V 12V 11V 10V 24 20 1.8 8V 16 7V 12 30 VGE = 15V 2.0 9V VCE(sat) - Normalized 28 I C - Amperes 8V 20 4 I C = 32A 1.6 1.4 I C = 16A 1.2 1.0 8 6V 0.8 4 I C = 8A 5V 0.6 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8.0 50 75 100 125 150 175 10 11 TJ - Degrees Centigrade Fig. 6. Input Admittance 50 TJ = 25ºC 7.0 40 I C - Amperes VCE - Volts 6.0 I C = 32A 5.0 4.0 30 20 16A TJ = 150ºC 25ºC 10 3.0 - 40ºC 8A 0 2.0 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved. 13 14 15 3 4 5 6 7 VGE - Volts 8 9 IXYH16N170CV1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 18 TJ = - 40ºC 16 14 V GE - Volts 12 10 I C = 16A I G = 10mA 12 25ºC g f s - Siemens VCE = 850V 14 150ºC 8 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 I C - Amperes 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 70 f = 1 MHz Cies 50 1,000 I C - Amperes Capacitance - PicoFarads 60 Coes 40 30 100 20 TJ = 150ºC RG = 10Ω dv / dt < 10V / ns 10 Cres 10 0 0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 1400 1600 1800 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH16N170CV1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 Eoff 5 Eon TJ = 150ºC , VGE = 15V 12 6 10 5 8 4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Eoff 6 VCE = 850V 6 2 4 E off - MilliJoules 3 5 3 4 TJ = 150ºC 2 3 I C = 16A TJ = 25ºC 1 0 20 30 40 50 60 70 2 1 0 0 2 1 10 80 12 14 16 18 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 200 7 tfi 180 6 24 26 28 30 32 2 3 t f i - Nanoseconds 4 600 500 140 400 I C = 16A 120 300 I C = 32A 100 200 t d(off) - Nanoseconds 3 Eon - MilliJoules 5 td(off) VCE = 850V 160 I C = 32A 4 700 TJ = 150ºC, VGE = 15V VCE = 850V E off - MilliJoules 22 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eon RG = 10ΩVGE = 15V 5 20 I C - Amperes RG - Ohms 6 E on - MilliJoules I C = 32A E on - MilliJoules Eoff - MilliJoules Eon RG = 10ΩVGE = 15V VCE = 850V 4 10 7 I C = 16A 1 2 0 25 50 75 100 80 60 1 150 125 100 0 10 20 30 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 300 220 250 180 tfi td(off) t f i - Nanoseconds 200 TJ = 150ºC 100 150 TJ = 25ºC 60 20 14 16 18 20 22 24 26 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 28 30 32 200 td(off) RG = 10Ω, VGE = 15V 180 140 100 100 60 50 20 160 I C = 16A 140 I C = 32A 120 25 50 75 100 TJ - Degrees Centigrade 125 100 150 t d(off) - Nanoseconds 140 12 80 VCE = 850V t d(off) - Nanoseconds VCE = 850V 10 70 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds tfi RG = 10Ω, VGE = 15V 180 60 RG - Ohms TJ - Degrees Centigrade 220 50 IXYH16N170CV1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri tri td(on) 50 TJ = 150ºC, VGE = 15V 80 I C = 32A 40 30 I C = 16A 20 20 0 20 30 40 50 60 70 tri 10 5 0 10 12 14 16 18 20 22 24 26 28 30 32 22 18 I C = 32A 40 16 30 14 I C = 16A 20 12 10 10 0 50 TJ = 25ºC 20 20 VCE = 850V 25 15 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 10Ω, VGE = 15V 50 TJ = 150ºC 30 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 60 20 0 80 RG - Ohms 70 40 10 10 10 25 t d(on) - Nanoseconds 40 td(on) VCE = 850V t d(on) - Nanoseconds 60 30 RG = 10Ω, VGE = 15V 50 VCE = 850V t r i - Nanoseconds 60 60 t r i - Nanoseconds 100 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 8 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_16N170C(4P-AT653) 1-26-17 IXYH16N170CV1 Fig. 21. Diode Forward Characteristics Fig. 22. Reverse Recovery Charge vs. -diF/dt 3.5 70 TJ = 150ºC 60 3.0 VR = 1200V 50 2.5 Q RR (µC) I F (A) TJ = 25ºC 40 TJ = 150ºC 30 2.0 I F = 32A 1.5 20 16A 8A 1.0 10 0 0.5 0 1 2 3 4 5 6 7 0 200 400 600 800 1000 1200 1400 1600 -diF/ dt (A/µs) VF (V) Fig. 23. Reverse Recovery Current vs. -diF/dt Fig. 24. Reverse Recovery Time vs. -diF/dt 300 40 TJ = 150ºC 35 VR = 1200V TJ = 150ºC I F = 32A 250 VR = 1200V tRR (ns) I RR (A) 30 25 20 16A 200 8A 150 15 I F = 32A 16A 8A 10 100 5 50 0 200 1.1 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 diF/dt (A/µs) -diF/dt (A/µs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature Fig. 26. Maximum Transient Thermal Impedance (Diode) 1 1600 VR = 1200V IF = 16A -diF /dt = 500A/µs 1.0 KF Z(th)JC - K / W 0.9 0.8 KF QRR KF IRR 0.7 0.6 0 20 40 60 80 100 TJ (ºC) © 2017 IXYS CORPORATION, All Rights Reserved. 120 140 160 0.1 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.