IXYH16N250CV1HV

Advance Technical Information IXYH16N250CV1HV High Voltage XPTTM IGBT w/ Diode Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM VCES = IC110 = VCE(sat)  tfi(typ) = TO-247HV (IXYH) Maximum Ratings 2500 2500 V V Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 38 16 14 126 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 64 1500 A V PC TC = 25°C 500 W -55 ... +175 175 -55 ... +175 °C °C °C Features 300 260 °C °C  1.13/10 Nm/lb.in. 6 g = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight 2500V 16A 4.0V 250ns G E C G = Gate E = Emitter    C (Tab) C = Collector Tab = Collector High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 2500 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC V 5.0 50 A 4 mA TJ = 150C = 16A, VGE = 15V, Note 1 TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved. V 100 3.30 4.75 4.00 nA V V Low Gate Drive Requirement High Power Density Applications      Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100794A(5/17) IXYH16N250CV1HV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 16A, VCE = 10V, Note 1 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. 11 VCE = 25V, VGE = 0V, f = 1MHz VCE = 0.5 • VCES, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 16A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 RthJC RthCS E R 18 S 5.8  1980 94 28 pF pF pF 97 13 43 nC nC nC 14 19 4.75 260 250 3.90 ns ns mJ ns ns mJ 15 24 5.80 305 236 4.40 ns ns mJ ns ns mJ 0.21 0.30 °C/W °C/W IC = 16A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 16A, VGE = 15V TO-247HV Outline 0P A A2 E1 0P1 Q S D1 D 4 D2 1 2 3 L1 D3 L e e1 A3 2X A1 E2 E3 4X b c 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector 3X Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 16A,VGE = 0V, Note 1 IRM IF = 16A, VGE = 0V, -diF/dt = 500A/μs, trr VR = 1200V, TJ = 150°C 5.0 TJ = 150°C 4.8 V V 28 A 165 ns RthJC Notes: 0.80 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 b1 IXYH16N250CV1HV o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 32 250 24 8V 14V 200 20 I C - Amperes 28 I C - Amperes VGE = 15V VGE = 15V 12V 10V 9V 7V 16 12 13V 12V 150 11V 10V 100 9V 8 6V 50 8V 4 7V 6V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 4 8 12 32 2.2 VGE = 15V 12V 10V 9V 24 28 VGE = 15V 2.0 8V I C = 32A 1.8 VCE(sat) - Normalized I C - Amperes 24 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 28 16 VCE - Volts VCE - Volts 7V 20 16 12 6V 8 1.6 I C = 16A 1.4 1.2 1.0 I C = 8A 0.8 4 5V 0 0 1 2 3 4 5 6 7 0.6 -50 8 -25 0 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 25 Fig. 6. Input Admittance 80 o TJ = 25 C 70 7 60 I C - Amperes VCE - Volts 6 I C = 32A 5 4 16A 50 40 30 20 3 o TJ = 150 C o 25 C 10 2 5 6 7 8 9 o - 40 C 8A 0 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved. 13 14 15 3 4 5 6 VGE - Volts 7 8 9 IXYH16N250CV1HV Fig. 7. Transconductance Fig. 8. Gate Charge 16 35 TJ = - 40ºC 25 I C = 16A I G = 10mA 12 25ºC V GE - Volts g f s - Siemens VCE = 1250V 14 30 20 150ºC 15 10 10 8 6 4 5 2 0 0 0 10 20 30 40 50 60 70 80 0 10 20 I C - Amperes 30 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 70 f = 1 MHz 50 Cies 1,000 I C - Amperes Capacitance - PicoFarads 60 Coes 40 30 100 20 TJ = 150ºC RG = 10Ω dv / dt < 10V / ns 10 Cres 10 0 0 5 10 15 20 25 30 35 40 250 500 750 1000 1250 1500 1750 2000 2250 2500 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH16N250CV1HV Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 24 12 20 10 10 16 8 8 12 Eoff 12 Eon TJ = 150ºC , VGE = 15V Eoff 14 Eon RG = 10ΩVGE = 15V 12 TJ = 150ºC VCE = 1250V I C = 32A 10 6 8 TJ = 25ºC 4 6 4 2 4 0 0 8 E on - MilliJoules 6 E on - MilliJoules Eoff - MilliJoules VCE = 1250V Eoff - MilliJoules 14 Fig. 13. Inductive Switching Energy Loss vs. Collector Current I C = 16A 4 2 10 20 30 40 50 60 70 2 8 80 12 16 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature VCE = 1250V 400 14 350 6 8 4 6 0 75 100 125 tfi td(off) 800 I C = 16A 250 700 200 600 I C = 32A 150 4 50 300 2 150 0 200 10 20 30 40 70 320 280 150 240 100 200 360 VCE = 1250V 250 320 I C = 32A 200 280 I C = 16A 150 50 160 12 16 20 24 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 28 32 400 240 100 25 50 75 100 TJ - Degrees Centigrade 125 200 150 t d(off) - Nanoseconds 360 TJ = 25ºC 8 80 td(off) RG = 10Ω, VGE = 15V 300 TJ = 150ºC 200 tfi 400 t d(off) - Nanoseconds t f i - Nanoseconds td(off) VCE = 1250V 250 60 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 350 440 RG = 10Ω, VGE = 15V 300 50 RG - Ohms t f i - Nanoseconds tfi 500 400 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 350 900 VCE = 1250V TJ - Degrees Centigrade 400 1000 100 I C = 16A 2 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 300 Eon - MilliJoules 10 50 32 TJ = 150ºC, VGE = 15V 12 I C = 32A 8 25 28 t d(off) - Nanoseconds 10 E off - MilliJoules Eon RG = 10ΩVGE = 15V 16 t f i - Nanoseconds Eoff 12 24 I C - Amperes RG - Ohms 14 20 IXYH16N250CV1HV Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri tri td(on) 50 TJ = 150ºC, VGE = 15V 80 I C = 32A I C = 16A 40 40 20 20 0 20 30 40 50 60 70 tri 16 TJ = 150ºC TJ = 25ºC 20 14 12 10 8 12 16 20 24 28 32 24 22 VCE = 1250V I C = 32A 20 40 18 30 16 20 I C = 16A 10 14 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 10Ω, VGE = 15V 50 30 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 60 18 0 80 RG - Ohms 70 40 10 0 10 20 t d(on) - Nanoseconds 60 td(on) VCE = 1250V t d(on) - Nanoseconds 60 22 RG = 10Ω, VGE = 15V 80 VCE = 1250V t r i - Nanoseconds 60 100 t r i - Nanoseconds 100 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 12 0 25 50 75 100 125 10 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_16N250CV1HV(5P-AT628) 4-05-17-A IXYH16N250CV1HV Fig. 21. Diode Forward Characteristics Fig. 22. Reverse Recovery Charge vs. -diF/dt 70 4.5 60 4.0 50 3.5 TJ = 150ºC VR = 1200V IF = 32A Q RR (μC) I F (A) TJ = 25ºC 40 TJ = 150ºC 30 3.0 2.5 20 2.0 10 1.5 0 16A 8A 1.0 0 1 2 3 4 5 6 7 8 9 10 11 12 200 400 600 800 VF (V) Fig. 23 Reverse Recovery Current vs. -diF/dt 1200 1400 1600 1800 Fig. 24. Reverse Recovery Time vs. -diF/dt 55 240 IF = 32A 50 TJ = 150ºC TJ = 150ºC 220 VR = 1200V 45 VR = 1200V 16A 200 40 tRR (ns) 8A I RR (A) 1000 -diF/ dt (A/μs) 35 30 180 160 32A 25 140 16A 20 8A 120 15 10 100 200 400 600 800 1000 1200 1400 1600 1800 200 400 600 diF/dt (A/μs) 1000 1200 1400 1600 1800 -diF/dt (A/μs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.05 800 1 Fig. 26. Maximum Transient Thermal Impedance (Diode) Z(th)JC - K / W 1.00 KF QRR KF 0.95 0.90 KF IRR VR = 1200V 0.85 IF = 16A -diF /dt = 500A/μs 0.80 0 20 40 60 80 100 TJ (ºC) © 2017 IXYS CORPORATION, All Rights Reserved. 120 140 160 0.1 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.