IXYH24N170C

Advance Technical Information IXYH24N170C High Voltage XPTTM IGBT VCES = IC110 = VCE(sat)  tfi(typ) = 1700V 24A 3.8V 50ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings VGES VGEM 1700 1700 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 58 24 145 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 48 VCE  1360 A V PC TC = 25°C 500 W -55 ... +175 175 -55 ... +175 °C °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 300 260 °C °C 1.13/10 Nm/lb.in 6 g Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features     High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages   Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V V 3.0 5.0 VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C © 2016 IXYS CORPORATION, All Rights Reserve V 25 A 3.5 mA TJ = 150C IGES  100 3.2 5.0 3.8     Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches nA V V DS100763(11/16) IXYH24N170C Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 12 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 24A, VCE = 10V, Note 1 Inductive load, TJ = 25°C IC = 24A, VGE = 15V VCE = 850V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 24A, VGE = 15V VCE = 850V, RG = 5 Note 2 S nC 11 nC 44 nC 12 30 4.90 160 50 1.95 ns ns mJ ns ns mJ 11 33 6.30 150 120 2.70 ns ns mJ ns ns mJ 0.21 0.30 °C/W °C/W B E Q pF pF pF 96 IC = 24A, VGE = 15V, VCE = 0.5 • VCES RthJC RthCS Notes: 20 2000 106 40 VCE = 25V, VGE = 0V, f = 1MHz TO-247 (IXYH) Outline D A A2 R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH24N170C Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 48 200 VGE = 15V 13V 12V 11V 10V 14V 160 13V 140 32 8V I C - Amperes I C - Amperes 40 VGE = 15V 180 9V 24 7V 16 12V 120 11V 100 10V 80 60 9V 40 8 6V 8V 20 0 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 5 10 15 2.2 48 VGE = 15V 13V 12V 11V 10V 30 VGE = 15V 2.0 9V V CE(sat) - Normalized 1.8 8V 32 I C - Amperes 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 40 20 VCE - Volts VCE - Volts 24 7V 16 I C = 48A 1.6 1.4 I C = 24A 1.2 1.0 0.8 I C = 12A 8 0.6 6V 0 0 1 8.0 2 3 4 5 6 7 8 5V 0.4 -50 9 -25 0 25 50 75 100 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 125 150 175 60 TJ = 25ºC 7.0 50 I C - Amperes VCE - Volts 6.0 I C = 48A 5.0 4.0 24A 40 30 20 3.0 TJ = 150ºC 25ºC 10 - 40ºC 12A 0 2.0 6 7 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserve 13 14 15 3 4 5 6 7 VGE - Volts 8 9 10 IXYH24N170C Fig. 7. Transconductance Fig. 8. Gate Charge 16 30 TJ = - 40ºC 27 VCE = 850V 14 I C = 24A 24 g f s - Siemens 18 V GE - Volts 25ºC 21 I G = 10mA 12 150ºC 15 12 10 8 6 9 4 6 2 3 0 0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 80 90 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 100 10,000 50 40 Cies 1,000 I C - Amperes Capacitance - PicoFarads f = 1 MHz Coes 100 30 20 TJ = 150ºC 10 RG = 5Ω dv / dt < 10V / ns Cres 10 0 0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 1400 1600 1800 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH24N170C Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff VCE = 850V 15 4 10 15 4 12 TJ = 150ºC 3 9 2 I C = 24A 2 6 TJ = 25ºC 5 1 0 10 15 20 25 30 35 40 45 50 3 0 0 5 0 10 55 15 20 25 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 7 Eon 18 160 16 140 RG = 5ΩVGE = 15V VCE = 850V 12 4 10 3 8 2 6 I C = 24A 0 50 75 100 125 tfi td(off) VCE = 850V 600 500 I C = 48A VCE = 850V 300 200 100 5 140 190 120 180 10 15 20 25 160 TJ = 150ºC 60 150 140 TJ = 25ºC 20 0 25 30 35 35 40 45 50 40 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserve 45 50 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) 55 VCE = 850V 170 80 160 I C = 24A 60 150 40 130 20 120 0 190 180 RG = 5Ω, VGE = 15V 100 t f i - Nanoseconds 80 20 30 140 I C = 48A 130 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 170 t d(off) - Nanoseconds t f i - Nanoseconds 200 100 15 400 I C = 24A 60 20 RG = 5Ω, VGE = 15V 10 700 80 2 150 td(off) 40 800 RG - Ohms tfi 120 50 100 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 45 TJ = 150ºC, VGE = 15V TJ - Degrees Centigrade 160 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 120 4 1 25 35 t d(off) - Nanoseconds 5 t f i - Nanoseconds 14 I C = 48A E on - MilliJoules E off - MilliJoules 6 30 I C - Amperes RG - Ohms 8 E on - MilliJoules 6 18 VCE = 850V 5 I C = 48A 21 Eon RG = 5ΩVGE = 15V 20 E on - MilliJoules E off - MilliJoules Eoff 6 TJ = 150ºC , VGE = 15V 8 7 25 Eon E off - MilliJoules 10 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH24N170C Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 140 tri 120 td(on) 70 80 60 70 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current tri 40 60 30 I C = 24A 30 11 20 10 9 10 0 0 15 20 25 30 35 40 45 50 tri 60 8 10 55 15 20 25 30 35 40 45 50 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 70 12 TJ = 25ºC 10 10 13 40 20 RG - Ohms 15 td(on) 14 RG = 5Ω, VGE = 15V VCE = 850V I C = 48A 50 13 40 12 30 11 I C = 24A 20 t d(on) - Nanoseconds t r i - Nanoseconds 50 20 5 14 TJ = 150ºC 40 0 VCE = 850V 60 t r i - Nanoseconds 80 15 t d(on) - Nanoseconds 50 t d(on) - Nanoseconds t r i - Nanoseconds I C = 48A VCE = 850V td(on) RG = 5Ω, VGE = 15V TJ = 150ºC, VGE = 15V 100 16 10 10 25 50 75 100 125 9 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_24N170C (5P-AT653) 11-15-16