IXYH24N90C3D1

Preliminary Technical Information IXYH24N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES = = IC90 VCE(sat)  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 900 900 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IF110 ICM TC TC TC TC 44 24 15 105 A A A A IA EAS TC = 25°C TC = 25°C 15 150 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 48 @VCE  VCES A PC TC = 25°C 200 W -55 ... +150 150 -55 ... +150 °C °C °C  300 260 °C °C  1.13/10 Nm/lb.in. 6 g = 25°C = 90° = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G     IC = 250A, VGE = 0V 950 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved   6.0 V 75 400 A μA  100 nA      2.30 2.95 3.00 C = Collector Tab = Collector Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated High Current Handling Capability International Standard Package High Power Density Low Gate Drive Requirement Applications V TJ = 125C Tab Advantages  BVCES E Features  Characteristic Values Min. Typ. Max. C G = Gate E = Emitter  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) 900V 24A 3.0V 90ns V V High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100396B(02/17) IXYH24N90C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 8 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 24A, VCE = 10V, Note 1 TO-247 (IXYH) Outline 14 S 1190 64 22 VCE = 25V, VGE = 0V, f = 1MHz IC = 24A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 24A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 Inductive load, TJ = 125°C IC = 24A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 RthJC RthCS D A A2 Q pF pF pF 40 10 18 nC nC nC 20 36 1.35 73 90 0.40 ns ns mJ ns ns mJ 0.70 22 38 2.60 85 130 0.55 ns ns mJ ns ns mJ 0.21 0.62 °C/W °C/W B E R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 15A,VGE = 0V, Note 1 TJ = 150°C 2.0 V V IRM IF = 15A,VGE = 0V, -diF/dt = 250A/μs, TJ = 100°C 14 A trr VR = 600V 340 ns 3.25 TJ = 100°C RthJC Notes: 1.6 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH24N90C3D1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 120 50 VGE = 15V 13V 12V 45 40 VGE = 15V 100 14V 11V 30 10V 25 20 15 12V 60 11V 40 9V 10V 10 20 8V 5 0 0.5 1 1.5 2 2.5 3 3.5 9V 8V 7V 0 6V 0 4 0 5 15 20 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.2 VGE = 15V 14V 13V 12V 40 1.8 11V 35 30 10V 25 20 9V 15 8V 7V 5 5V 1 1.5 2 2.5 3 3.5 4 4.5 5 1.6 1.4 I C = 24A 1.2 1.0 I C = 12A 0.6 0.4 0 0.5 I C = 48A 0.8 10 30 VGE = 15V 2.0 V CE(sat) - Normalized 45 0 10 VCE - Volts 50 I C - Amperes 13V 80 I C - Amperes I C - Amperes 35 -50 5.5 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 60 9 TJ = 25ºC 8 50 40 6 I C - Amperes VCE - Volts 7 5 I C = 48A 4 3 30 TJ = 150ºC 25ºC - 40ºC 20 24A 10 2 12A 1 0 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved 13 14 15 4.5 5.5 6.5 7.5 8.5 VGE - Volts 9.5 10.5 11.5 IXYH24N90C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 22 16 TJ = - 40ºC, 25ºC, 150ºC 20 VCE = 450V 14 I C = 24A 18 14 V GE - Volts g f s - Siemens I G = 10mA 12 16 12 10 8 6 10 8 6 4 4 2 2 0 0 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 45 10,000 50 Cies 40 1,000 I C - Amperes Capacitance - PicoFarads f = 1 MHz Coes 100 30 20 TJ = 150ºC 10 Cres 10 0 5 10 15 20 25 RG = 10Ω dv / dt < 10V / ns 0 30 35 40 200 300 400 500 600 700 800 900 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYH24N90C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.4 0.9 12 Eoff 1.2 Eon 6 0.6 4 E off - MilliJoules 0.8 0.4 0.2 20 25 30 35 40 45 50 0.6 4 0.5 3 2 0.3 0 0.2 1 0 12 55 16 20 24 7 Eon 3 0.5 2 t f i - Nanoseconds Eoff - MilliJoules 0.6 1 0.3 180 VCE = 450V 140 160 I C = 24A 120 100 120 80 100 60 80 40 60 40 10 15 20 25 220 55 140 100 120 90 80 TJ = 25ºC 80 70 60 60 TJ = 125ºC 40 50 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 40 44 48 85 RG = 10Ω, VGE = 15V 120 t f i - Nanoseconds 110 td(off) 80 I C = 24A 100 75 80 70 60 65 I C = 48A 40 60 20 25 50 75 TJ - Degrees Centigrade 100 55 125 t d(off) - Nanoseconds t f i - Nanoseconds 50 VCE = 450V t d(off) - Nanoseconds VCE = 450V 36 140 120 160 32 45 90 tfi 130 td(off) RG = 10Ω, VGE = 15V 28 40 160 140 24 35 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 20 30 RG - Ohms TJ - Degrees Centigrade 16 140 20 0 125 100 tfi 200 I C = 48A I C = 24A 0.4 75 td(off) t d(off) - Nanoseconds 4 E on - MilliJoules 0.7 12 48 5 I C = 48A 100 44 TJ = 125ºC, VGE = 15V 160 180 40 220 tfi 180 VCE = 450V 200 36 200 6 RG = 10ΩVGE = 15V 50 32 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.0 25 28 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 0.8 2 TJ = 25ºC RG - Ohms 0.9 5 TJ = 125ºC 0.4 I C = 24A Eoff 6 E on - MilliJoules 8 I C = 48A E on - MilliJoules E off - MilliJoules Eon RG = 10ΩVGE = 15V 0.7 1.0 15 7 VCE = 450V VCE = 450V 10 Eoff 0.8 10 TJ = 125ºC , VGE = 15V Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH24N90C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 240 120 70 tri TJ = 125ºC, VGE = 15V 200 29 tri td(on) RG = 10Ω, VGE = 15V 100 60 40 80 40 0 20 25 30 35 40 45 50 25 TJ = 125ºC TJ = 25ºC 60 23 40 21 20 20 19 10 0 30 I C = 24A t r i - Nanoseconds t r i - Nanoseconds 120 80 17 12 55 t d(on) - Nanoseconds 50 I C = 48A t d(on) - Nanoseconds 160 15 27 VCE = 450V VCE = 450V 10 td(on) 16 20 24 28 32 36 40 44 48 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 32 tri 140 30 RG = 10Ω, VGE = 15V VCE = 450V 120 28 I C = 48A 100 80 26 24 60 22 I C = 24A 40 20 20 t d(on) - Nanoseconds t r i - Nanoseconds td(on) 18 0 25 50 75 100 16 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_24N90C3(4D) 10-13-11 IXYH24N90C3D1 TVJ = 100°C VR = 600V TVJ = 100°C VR = 600V Fig. 21. Typ forward current IF vs VF Fig. 22. Fig. 23. TVJ = 100°C VR = 600V Fig. 24. Fig. 27. © 2017 IXYS CORPORATION, All Rights Reserved Fig. 25. TVJ = 100°C IF = 15A Fig. 26. Fig. 28. Maximum transient thermal resistance junction to case Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.