IXYH30N65C3

IXYP30N65C3 IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 30A 2.7V 24ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 60 30 118 A A A IA EAS TC = 25°C TC = 25°C 10 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 60 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-247 270 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 3 6 g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V G VCE(sat) IC        Tab C = Collector Tab = Collector 6.0 V 15 200 A A 100 nA 2.35 2.58 2.70 Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Packages High Power Density Extremely Rugged Low Gate Drive Requirement Applications     V V     © 2014 IXYS CORPORATION, All Rights Reserved E Advantages  = 30A, VGE = 15V, Note 1 TJ = 150C C G = Gate E = Emitter V TJ = 150C VCE = 0V, VGE = 20V Tab TO-247  IGES CE Features TJ TJM Tstg TL TSOLD G Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100539C(10/14) IXYP30N65C3 IXYH30N65C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 11 IC = 30A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS RthCS Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 TO-220 TO-247 TO-220 Outline 19 S 1225 75 28 pF pF pF 44 7 24 nC nC nC 21 42 1.00 75 24 0.27 ns ns mJ ns ns mJ 19 40 1.50 90 30 0.41 ns ns mJ ns ns mJ 0.50 0.21 0.55 °C/W °C/W °C/W Pins: 1 - Gate 3 - Emitter TO-247 Outline 1 Notes: 2 - Collector 2 P 3 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYP30N65C3 IXYH30N65C3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 60 VGE = 15V 13V 12V 50 140 VGE = 15V 120 14V 11V 100 30 10V 20 9V I C - Amperes I C - Amperes 40 13V 80 12V 60 11V 40 10 8V 20 0 0.5 1 1.5 2 2.5 3 3.5 4 9V 8V 7V 0 10V 0 4.5 0 5 10 VCE - Volts 20 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 1.8 60 VGE = 15V 13V 12V 50 15 VCE - Volts VGE = 15V 1.6 VCE(sat) - Normalized 11V I C - Amperes 40 10V 30 9V 20 1.4 I C =60A 1.2 I C = 30A 1.0 8V I C = 15A 0.8 10 7V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VCE - Volts -50 5 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade 6V Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 60 8 TJ = 25ºC 7 50 6 I C - Amperes V CE - Volts 40 5 I C = 60A 4 30 TJ = 150ºC 25ºC - 40ºC 20 3 30A 10 2 15A 1 8 9 10 11 12 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 0 13 14 15 5 6 7 8 VGE - Volts 9 10 11 175 IXYP30N65C3 IXYH30N65C3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 28 TJ = - 40ºC VCE = 10V 24 VGE - Volts g f s - Siemens 150ºC 16 I C = 30A I G = 10mA 12 25ºC 20 VCE = 325V 14 12 8 10 8 6 4 4 2 0 0 0 5 10 15 20 25 30 35 40 45 50 55 0 60 5 10 I C - Amperes 15 20 25 30 35 40 45 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 70 f = 1 MHz 50 1,000 C ies I C - Amperes Capacitance - PicoFarads 60 C oes 100 40 30 20 TJ = 150ºC RG = 10Ω dv / dt < 10V / ns 10 C res 10 0 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYP30N65C3 IXYH30N65C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 2.4 Eoff 2.0 Eon - 12 1.2 10 1.0 6 --- Eoff TJ = 150ºC , VGE = 15V VCE = 400V ---5 8 1.2 6 0.8 4 0.4 0.8 4 0.6 3 TJ = 150ºC 0.4 2 0.2 0 0.0 2 0.0 10 20 30 40 50 60 70 80 0 15 25 30 35 40 45 50 55 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eoff Eon 7 80 6 70 tfi ---- RG = 10Ω , VGE = 15V td(off) - - - 300 TJ = 150ºC, VGE = 15V VCE = 400V E 0.6 3 0.4 2 0.2 - MilliJoules 4 on I C = 60A t f i - Nanoseconds 5 60 250 50 200 I C = 60A 40 150 I C = 30A 30 1 t d(off) - Nanoseconds 1.0 0.8 60 350 VCE = 400V Eoff - MilliJoules 20 RG - Ohms 1.4 1.2 1 TJ = 25ºC I C = 30A Eon - MilliJoules I C = 60A 1.6 E off - MilliJoules VCE = 400V E on - MilliJoules Eoff - MilliJoules Eon RG = 10Ω , VGE = 15V 100 I C = 30A 0.0 25 50 75 100 20 0 150 125 50 10 20 30 40 TJ - Degrees Centigrade 80 140 70 100 TJ = 150ºC 30 80 TJ = 25ºC 20 60 10 0 15 20 25 30 35 40 45 I C - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 50 55 60 100 tfi td(off) - - - - 95 60 90 VCE = 400V 50 85 I C = 60A 40 80 I C = 30A 30 75 20 70 40 10 65 20 0 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 120 40 80 RG = 10Ω , VGE = 15V t f i - Nanoseconds VCE = 400V 160 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - RG = 10Ω , VGE = 15V 50 70 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 70 tfi 60 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 60 50 IXYP30N65C3 IXYH30N65C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 280 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 120 140 tri 240 td(on) - - - - 120 80 120 60 I C = 60A 80 40 40 0 20 30 40 50 60 70 26 TJ = 25ºC 60 22 TJ = 150ºC 40 14 10 15 80 20 25 30 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 55 60 80 100 24 80 22 60 20 I C = 30A 40 Triangular Wave 70 I C - Amperes 26 I C = 60A 60 50 TJ = 150ºC 40 TC = 75ºC 30 VCE = 400V 20 VGE = 15V 10 RG = 10Ω D = 0.5 18 20 50 50 90 28 VCE = 400V 25 45 100 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 10Ω , VGE = 15V 120 40 Fig. 21. Maximum Peak Load Current vs. Frequency 30 tri 35 I C - Amperes RG - Ohms 140 18 0 0 10 80 20 20 I C = 30A 30 VCE = 400V t r i - Nanoseconds t r i - Nanoseconds 160 t d(on) - Nanoseconds 100 td(on) - - - - RG = 10Ω , VGE = 15V t d(on) - Nanoseconds VCE = 400V tri 100 TJ = 150ºC, VGE = 15V 200 34 75 100 125 16 150 TJ - Degrees Centigrade Square Wave 0 1 10 100 1,000 fmax - KiloHertzs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_30N65C3(4D-R47) 8-26-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.