IXYH40N120A4

IXYH40N120A4 1200V XPTTM GenX4TM IGBT VCES = IC110 = VCE(sat)  tfi(typ) = Ultra Low-Vsat PT IGBT for up to 5kHz Switching 1200V 40A 1.80V 220ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 140 40 275 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 80 0.8 • VCES A PC TC = 25°C 600 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 1.13 / 10 Nm/lb.in VCE  TJ TJM Tstg TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features 6 g    Optimized for Low Conduction Positive Thermal Coefficient of Vce(sat) International Standard Package Advantages   High Power Density Low Gate Drive Requirement Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 TJ = 150C ©2020 Littelfuse, Inc.   V 6.5 V 10 A 1 mA TJ = 150C IGES  100 1.56 1.80 1.80      Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits nA V V DS100931D(5/20) IXYH40N120A4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 12 IC = 32A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 32A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 32A, VGE = 15V VCE = 600V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 32A, VGE = 15V VCE = 600V, RG = 5 Note 2 22 S 1650 105 60 pF pF pF 90 15 40 nC nC nC 22 50 2.30 204 346 3.75 ns ns mJ ns ns mJ 17 50 3.55 280 760 6.46 ns ns mJ ns ns mJ 0.21 0.25 °C/W C/W RthJC RthCS Notes: 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N120A4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 220 64 VGE = 15V 13V 12V 11V 56 180 10V 40 I C - Amperes I C - Amperes 48 V GE = 15V 200 9V 32 24 8V 160 14V 140 13V 120 12V 100 11V 80 60 16 10V 40 8 7V 8V 7V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 0 2.8 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 64 1.8 V GE = 15V 13V 12V 56 11V 18 20 150 175 VGE = 15V 1.6 I C = 64A V CE(sat) - Normalized 10V 48 I C - Amperes 9V 20 40 9V 32 8V 24 1.4 1.2 I C = 32A 1.0 16 7V 8 0.8 I C = 16A 6V 0 0.6 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 -50 -25 0 25 VCE - Volts 50 75 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 125 Fig. 6. Input Admittance 4.0 90 o TJ = 25 C 80 3.5 o TJ = - 40 C 70 3.0 o 25 C 60 2.5 I C - Amperes VCE - Volts 100 TJ - Degrees Centigrade I C = 64A 2.0 o 150 C 50 40 30 32A 20 1.5 10 16A 1.0 0 7 8 9 10 11 VGE - Volts ©2020 Littelfuse, Inc. 12 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYH40N120A4 Fig. 7. Transconductance Fig. 8. Gate Charge 30 16 o TJ = - 40 C VCE = 600V 14 25 I C = 32A I G = 10mA o 20 25 C V GE - Volts g f s - Siemens 12 o 15 150 C 10 10 8 6 4 5 2 0 0 0 10 20 30 40 50 60 70 80 0 10 20 30 I C - Amperes 50 60 70 80 90 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 90 10,000 f = 1 MHz 80 70 1,000 60 Cies I C - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs C oes 100 50 40 30 C res 10 o 20 TJ = 150 C 10 RG = 5Ω dv / dt < 10V / ns 0 0 1 5 10 15 20 25 35 40 200 300 400 500 Fig.3011. Maximum Transient Thermal Impedance VCE - Volts 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaa 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH40N120A4 Fig. 12. Inductive Switching Energy Loss vs. Collector Current Eoff 8 10 Eoff o TJ = 150 C VCE = 600V Eon 6 o TJ = 150 C 5 RG = 5Ω,VGE = 15V I C = 32A 6 6 4 8 4 o TJ = 25 C 6 3 o Eon - MilliJoules 8 E on - MilliJoules E off - MilliJoules 12 Eon RG = 5Ω,VGE = 15V 10 10 E off - MilliJoules 12 Fig. 13. Inductive Switching Energy Loss vs. Collector-Emitter Voltage TJ = 25 C 4 2 16 24 32 40 48 56 0 2 400 500 14 14 12 12 Eoff Eon 900 6 I C = 32A 4 20 25 30 35 40 45 50 E off - MilliJoules 8 15 10 I C = 64A 8 4 2 2 4 25 50 o TJ = 150 C, VGE = 15V 800 1000 700 900 400 I C = 64A 300 600 200 560 100 20 25 30 35 RG - Ohms ©2020 Littelfuse, Inc. 40 45 50 55 t f i - Nanoseconds 680 tfi td(off) 400 VCE = 600V 350 o TJ = 150 C 700 300 600 250 500 200 o TJ = 25 C 400 150 300 100 200 50 16 24 32 40 I C - Amperes 48 56 64 t d(off) - Nanoseconds 500 t d(off) - Nanoseconds I C = 32A 15 0 150 125 450 800 600 10 100 RG = 5Ω,VGE = 15V VCE = 600V 760 640 75 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current td(off) 720 2 I C = 32A TJ - Degrees Centigrade Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 800 6 6 4 55 8 RG - Ohms tfi 10 E on - MilliJoules 10 Eon - MilliJoules 10 10 12 VCE = 600V 12 8 1 1000 Eon RG = 5Ω,VGE = 15V I C = 64A 6 t f i - Nanoseconds 800 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature VCE = 600V 5 700 Fig. 14. Inductive Switching Energy Loss vs. Gate Resistance o 840 600 VCE - Volts TJ = 150 C , VGE = 15V 5 2 I C - Amperes Eoff E off - MilliJoules 4 64 16 14 2 IXYH40N120A4 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 900 tfi 800 td(off) RG = 5Ω, VGE = 15V 360 350 320 300 I C = 32A I C = 64A 500 200 400 t r i - Nanoseconds t f i - Nanoseconds 240 160 300 25 50 75 100 125 td(on) VCE = 600V 250 60 I C = 64A 150 45 I C = 32A 100 30 50 15 120 150 0 0 5 10 15 36 td(on) 32 RG = 5Ω, VGE = 15V 80 24 60 20 o TJ = 150 C 40 16 20 12 0 8 32 40 45 50 55 td(on) 31 29 40 48 56 VCE = 600V 140 120 27 25 I C = 64A 100 23 80 21 60 19 I C = 32A 40 17 20 64 I C - Amperes t d(on) - Nanoseconds TJ = 25 C 24 35 tri 160 t r i - Nanoseconds 28 o 16 30 RG = 5Ω, VGE = 15V VCE = 600V 100 25 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 180 t d(on) - Nanoseconds t r i - Nanoseconds 120 20 RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri 75 200 TJ - Degrees Centigrade 140 90 o t d(on) - Nanoseconds 600 t d(off) - Nanoseconds 280 tri 105 TJ = 150 C, VGE = 15V VCE = 600V 700 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 25 50 75 100 125 15 150 TJ - Degrees Centigrade Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_40N120A4 (N6-RY92) 4-30-20-A IXYH40N120A4 TO-247 Outline 1 - Gate 2,4 - Collector 3 - Emitter ©2020 Littelfuse, Inc. IXYH40N120A4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions.