IXYH40N120B3D1

IXYH40N120B3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 86 40 25 180 A A A A IA EAS TC = 25°C TC = 25°C 20 400 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load ICM = 80 @VCE ≤ VCES A PC TC = 25°C 480 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G z z z z z z = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V Advantages IGES VCE = 0V, VGE = ±20V VCE(sat) IC z V z z TJ = 125°C = 40A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved 2.4 3.1 Optimized for 5-30kHZ Switching Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated International Standard Package High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. IC C = Collector Tab = Collector Features z BVCES Tab E G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C 5.0 V 50 500 μA μA z ±100 nA z 2.9 V V z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100413B(03/13) IXYH40N120B3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 13 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 10Ω Note 2 Inductive load, TJ = 125°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 10Ω Note 2 RthJC RthCS TO-247 (IXYH) Outline 22 S 1690 157 47 pF pF pF 87 12 38 nC nC nC 22 50 2.70 177 183 1.60 ns ns mJ ns ns mJ 3.00 24 60 5.25 205 206 2.05 ns ns mJ ns ns mJ 0.21 0.26 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 30A,VGE = 0V, Note 1 IRM IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C trr VR = 300V TJ = 150°C TJ = 100°C 100 RthJC Notes: 3.0 V V 4 A 1.6 ns 0.9 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N120B3D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 240 80 60 14V 200 9V 13V 160 50 IC - Amperes IC - Amperes VGE = 15V VGE = 15V 13V 12V 11V 10V 70 8V 40 30 7V 12V 11V 120 10V 80 9V 20 8V 40 10 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 20 25 VCE - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature VGE = 15V 2.0 1.8 50 VCE(sat) - Normalized 60 30 2.2 VGE = 15V 13V 11V 10V 9V 8V 70 7V 40 30 6V 20 I C = 80A 1.6 1.4 I 1.2 C = 40A 1.0 0.8 10 I C = 20A 0.6 5V 0.4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 5.5 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 8 TJ = 25ºC 90 7 TJ = - 40ºC 25ºC 150ºC 80 6 70 IC - Amperes VCE - Volts 15 VCE - Volts 80 IC - Amperes 7V 6V 5 I C = 80A 4 3 60 50 40 30 40A 20 2 10 20A 1 0 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 3 4 5 6 7 VGE - Volts 8 9 10 IXYH40N120B3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 30 16 VCE = 600V 14 TJ = - 40ºC 25ºC I C = 80A I G = 10mA 12 20 VGE - Volts g f s - Siemens 25 150ºC 15 10 10 8 6 4 5 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 90 10,000 70 60 1,000 IC - Amperes Capacitance - PicoFarads 80 Cies Coes 50 40 30 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 20 TJ = 150ºC 10 RG = 10Ω dv / dt < 10V / ns 0 200 300 400 500 600 700 800 900 1000 1100 1200 1300 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH40N120B3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6 4.0 20 Eoff Eon - --3.5 TJ = 125ºC , VGE = 15V 5 14 Eoff ---12 RG = 10Ω , VGE = 15V 16 VCE = 600V Eon VCE = 600V TJ = 125ºC 12 3 8 I 2 C = 40A Eoff - MilliJoules 4 2.5 20 25 30 35 40 45 2.0 6 1.5 4 1.0 2 0.5 0 15 8 TJ = 25ºC 4 1 10 50 0 20 55 30 40 RG - Ohms 12 RG = 10Ω , VGE = 15V TJ = 125ºC, VGE = 15V 240 2.5 6 2.0 4 I C = 40A 1.5 75 500 I C = 40A 160 400 120 300 200 40 100 10 15 20 25 260 240 220 200 200 180 TJ = 25ºC 100 160 50 140 0 120 50 60 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 50 55 70 80 td(off) - - - - 210 RG = 10Ω , VGE = 15V VCE = 600V 250 200 I C = 40A 200 190 150 180 I C = 80A 100 170 50 160 0 25 50 75 TJ - Degrees Centigrade 100 150 125 t d(off) - Nanoseconds TJ = 125ºC 40 45 220 tfi 300 t f i - Nanoseconds RG = 10Ω , VGE = 15V t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 600V 30 40 350 280 400 300 35 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 350 30 RG - Ohms TJ - Degrees Centigrade tfi C = 80A 80 0 125 100 200 I 2 1.0 50 t f i - Nanoseconds Eoff - MilliJoules 8 I C = 80A Eon - MilliJoules 3.0 20 600 t d(off) - Nanoseconds 10 150 td(off) - - - - VCE = 600V 3.5 250 80 700 tfi ---- VCE = 600V 25 70 280 14 4.0 60 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.5 Eon 50 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 10 Eon - MilliJoules I C = 80A Eon - MilliJoules Eoff - MilliJoules 3.0 IXYH40N120B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 250 td(on) - - - - 200 80 VCE = 600V C = 80A I 100 C = 40A 40 50 38 VCE = 600V 34 TJ = 125ºC 100 30 80 26 TJ = 25ºC 60 22 40 18 20 14 t d(on) - Nanoseconds 60 td(on) - - - - RG = 10Ω , VGE = 15V 120 t d(on) - Nanoseconds 150 I 42 tri 140 TJ = 125ºC, VGE = 15V t r i - Nanoseconds tri t r i - Nanoseconds 160 100 20 0 0 0 10 15 20 25 30 35 40 45 50 10 20 55 30 40 50 60 70 80 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 45 tri 140 td(on) - - - 40 RG = 10Ω , VGE = 15V 120 35 I 100 C = 80A 30 80 25 I C = 40A 60 20 40 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 600V 15 20 25 50 75 100 10 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_40N120B3(4A-C91) 11-10-11 IXYH40N120B3D1 1000 60 A 50 IF 30 TVJ= 100°C nC V = 300V R 800 Qr TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 40 600 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A 0 1 0 100 3 V 2 5 A/μs 1000 -diF /dt VF Fig. 21. Forward Current IF Versus VF Fig. 22. Reverse Recovery Charge Qr Versus -diF/dt 2.0 90 Kf IF= 60A IF= 30A IF= 15A IRM 400 600 A/μs 800 -diF /dt 1000 1.00 TVJ= 100°C IF = 30A μs VFR tfr 80 1.0 200 Fig. 23. Peak Reverse Current IRM Versus -diF/dt V V FR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 tfr 0.75 10 0.50 5 0.25 70 0.5 Qr 0.0 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 -diF /dt Fig. 24. Dynamic Parameters Qr, IRM Versus TVJ Fig. 25. Recovery Time trr Versus -diF/dt 1 K/W 0.1 Z thJC 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 Fig. 27. Transient Thermal Resistance Junction to Case © 2013 IXYS CORPORATION, All Rights Reserved 0.1 t s 1 0 0 200 400 0.00 600 A/μs 800 1000 diF /dt Fig. 26. Peak Forward Voltage VFR and tfr Versus diF/dt Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.