IXYH40N120C3D1

IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = = IC90 VCE(sat)  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 40A 3.5V 50ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC90 IF110 ICM TC TC TC TC 80 40 25 160 A A A A IA EAS TC = 25°C TC = 25°C 20 400 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 80 @VCE  VCES A PC TC = 25°C 480 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g = 25°C (Chip Capability) = 90°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features        Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated High Current Handling Capability International Standard Package Advantages   High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC  V   5.0 V 25 750 A μA 100 nA TJ = 125C IGES  = 40A, VGE = 15V, Note 1 TJ = 150C © 2016 IXYS CORPORATION, All Rights Reserved 2.9 3.7 3.5     High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100417C(5/16) IXYH40N120C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 11 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 40A, VCE = 10V, Note 1 TO-247 (IXYH) Outline 18 S 1870 107 38 VCE = 25V, VGE = 0V, f = 1MHz IC = 40A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 10 Note 2 RthJC RthCS D A A2 Q pF pF pF 80 14 37 nC nC nC 18 64 3.8 133 50 1.1 ns ns mJ ns ns mJ 22 73 6.6 160 143 2.1 ns ns mJ ns ns mJ 0.21 0.26 °C/W °C/W B E R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions VF IRM trr IF = 30A,VGE = 0V, Note 1 Characteristic Value Min. Typ. Max. TJ = 150°C IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C VR = 600V 195 TJ = 100°C RthJC Notes: 3.00 V V 9 A 1.75 ns 0.90 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N120C3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 180 VGE = 15V 13V 12V 70 14V 140 60 10V 13V 120 50 I C - Amperes I C - Amperes VGE = 15V 160 11V 9V 40 8V 30 20 12V 100 11V 80 10V 60 9V 40 7V 10 8V 20 6V 0 0 1 2 3 4 5 6 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.2 80 VGE = 15V 13V 12V 70 1.8 V CE(sat) - Normalized 10V 50 9V 40 30 8V 20 30 VGE = 15V 2.0 11V 60 I C - Amperes 7V 6V 0 I C = 80A 1.6 1.4 I C = 40A 1.2 1.0 0.8 7V 10 6V 0 0 1 2 3 4 5 6 7 I C = 20A 0.6 0.4 -50 8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 10 50 75 100 125 150 175 TJ - Degrees Centigrade 9 Fig. 6. Input Admittance 100 TJ = - 40ºC 25ºC 150ºC TJ = 25ºC 80 8 6 I C - Amperes VCE - Volts 7 I C = 80A 5 4 60 40 40A 3 20 2 20A 1 0 7 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 12 IXYH40N120C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 28 24 TJ = - 40ºC 14 25ºC 12 150ºC 10 V GE - Volts g f s - Siemens 20 16 12 8 VCE = 600V I C = 40A I G = 10mA 8 6 4 4 2 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0 10 20 I C - Amperes 30 40 50 60 70 80 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 90 70 1,000 I C - Amperes Capacitance - PicoFarads 80 Cies Coes 100 60 50 40 30 Cres f = 1 MHz 10 20 TJ = 150ºC 10 RG = 10Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 800 900 1000 1100 1200 1300 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH40N120C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff 6 Eoff 24 3 12 2 3 12 2 8 TJ = 25ºC 8 I C = 40A 1 1 4 4 0 0 10 15 20 25 30 35 40 45 50 0 0 20 55 30 40 RG - Ohms 5 Eon 70 80 8 140 350 I C = 40A 120 300 100 250 80 I C = 40A 1 400 200 I C = 80A 4 60 0 25 50 75 100 125 150 40 0 150 100 10 15 20 25 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 220 160 200 140 RG = 10Ω, VGE = 15V t f i - Nanoseconds 120 160 80 140 TJ = 25ºC 0 20 30 40 50 45 50 55 60 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 70 80 170 td(off) 160 RG = 10Ω, VGE = 15V I C = 40A 120 150 100 140 I C = 80A 80 120 60 100 40 130 120 25 50 75 100 TJ - Degrees Centigrade 125 110 150 t d(off) - Nanoseconds 180 t d(off) - Nanoseconds TJ = 150ºC 40 40 VCE = 600V VCE = 600V 160 35 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) t f i - Nanoseconds tfi 200 30 RG - Ohms TJ - Degrees Centigrade 240 t d(off) - Nanoseconds 2 Eon - MilliJoules 12 450 VCE = 600V 160 3 500 td(off) TJ = 150ºC, VGE = 15V 16 I C = 80A VCE = 600V t f i - Nanoseconds 4 tfi 180 RG = 10ΩVGE = 15V 60 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 200 20 Eoff 50 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules 16 TJ = 150ºC E on - MilliJoules 16 Eon VCE = 600V 20 4 20 RG = 10ΩVGE = 15V 4 I C = 80A VCE = 600V E on - MilliJoules E off - MilliJoules Eon TJ = 150ºC , VGE = 15V 5 5 28 E off - MilliJoules 7 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH40N120C3D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 350 td(on) 200 200 50 150 40 I C = 40A 100 30 50 20 0 20 25 30 35 40 45 50 140 30 TJ = 150ºC 120 100 24 80 60 18 40 15 20 12 9 20 55 30 tri 40 50 60 70 80 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 240 21 TJ = 25ºC RG - Ohms 280 27 0 10 15 33 t d(on) - Nanoseconds 60 t d(on) - Nanoseconds I C = 80A 36 VCE = 600V 70 250 39 td(on) RG = 10Ω, VGE = 15V 160 VCE = 600V 10 tri 180 80 TJ = 150ºC, VGE = 15V 300 t r i - Nanoseconds 90 t r i - Nanoseconds 400 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 40 td(on) 36 RG = 10Ω, VGE = 15V 200 32 160 28 I C = 80A 120 24 80 20 I C = 40A 40 16 0 25 50 75 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 600V 100 125 12 150 TJ - Degrees Centigrade Fig. 21. Maximum Transient Thermal Impedance (Diode) 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_40N120C3(4A-Z92) 5-09-16-A IXYH40N120C3D1 Fig. 23. Reverse Recovery Charge QRM vs. -diF/dt Fig. 22. Forward Current IF vs VF 70 5 TVJ = 100ºC 60 VR = 600V 4 50 IF = 60A TVJ = 150ºC IF [A] 100ºC 40 3 25ºC QRM [µC] 30 30A 2 15A 20 1 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 100 1000 500 VF [V] -diF/dt [A/µs] Fig. 25. Dynamic Parameters QRM, IRM vs. TVJ Fig. 24. Peak Reverse Current IRM vs. -diF/dt 2 60 TVJ = 100ºC I RM & QRM [normalized] VR = 600V 50 40 IF = 60A, 30A, 15A I RM 30 [A] 20 1.5 1 IRM 0.5 QRM 10 0 0 0 200 400 600 800 20 1000 40 60 80 160 1.2 TVJ = 100ºC 100 VR = 600V 1 IF = 30A trr 80 trr [ns] 140 120 TVJ = 100ºC 200 120 Fig. 27. Peak Forward Voltage VFR, trr vs -diF/dt Fig. 26. Recovery Time trr vs. -diF/dt 220 100 TVJ [ºC] -diF/dt [A/µs] 0.8 180 VFR [V] IF = 60A 30A 15A 160 0.6 trr 60 [µs] VFR 140 120 40 0.4 20 0.2 0 0 200 400 600 -diF/dt [A/µs] © 2016 IXYS CORPORATION, All Rights Reserved 800 1000 0 100 200 300 400 500 600 -diF/dt [A/µs] 700 800 900 0 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.