IXYH40N65C3

Preliminary Technical Information IXYH40N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.35V 20ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 80 40 180 A A A IA EAS TC = 25°C TC = 25°C 20 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 80 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 5 μs PC TC = 25°C 300 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features    TJ TJM Tstg TL TSOLD G   Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Package Advantages    High Power Density Extremely Rugged Low Gate Drive Requirement Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved  V   6.0 V  10 500 A A  100 nA TJ = 150C IGES  2.0 2.4 2.35  Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters V V DS100570C(8/14) IXYH40N65C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 16 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 RthJC RthCS Notes: TO-247 (IXYH) Outline 26 S 1950 118 40 pF pF pF 66 13 32 nC nC nC 23 40 0.83 110 20 0.36 ns ns mJ ns ns mJ 0.65 24 40 1.60 130 30 0.53 ns ns mJ ns ns mJ 0.21 0.50 °C/W °C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N65C3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 240 VGE = 15V 13V 12V 70 VGE = 15V 200 11V 14V 60 10V I C (A) 50 I C (A) 160 40 13V 12V 120 11V 9V 30 80 10V 20 8V 10 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0 5 10 15 20 25 VCE (V) VCE (V) Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 2.0 VGE = 15V 13V 12V 70 30 VGE = 15V 1.8 I C = 80A 11V VCE(sat) - Normalized 60 50 I C (A) 9V 40 10V 40 30 9V 1.6 1.4 1.2 I C = 40A 1.0 0.8 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 7V 4.5 I C = 20A 0.6 8V 0.4 -50 5 -25 0 25 50 VCE (V) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 75 100 125 150 175 TJ (ºC) Fig. 6. Input Admittance 70 TJ = 25ºC 60 5 4 I C (A) V CE (V) 50 I C = 80A 3 40 30 TJ = 150ºC 25ºC 20 40A - 40ºC 2 10 20A 1 0 8 9 10 11 12 VGE - (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4.5 5.5 6.5 7.5 8.5 VGE (V) 9.5 10.5 11.5 IXYH40N65C3 Fig. 8. Gate Charge Fig. 7. Transconductance 40 16 TJ = - 40ºC 35 VCE = 325V 14 30 I C = 40A I G = 10mA 12 25ºC 10 150ºC VGE (V) g f s (S) 25 20 8 15 6 10 4 5 2 0 0 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 QG (nC) I C (A) Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 90 f = 1 MHz 80 1,000 60 I C (A) Capacitance (pF) 70 Cies Coes 100 50 40 30 Cres 10 20 TJ = 150ºC 10 RG = 10Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 100 200 300 400 VCE (V) 500 600 700 VCE (V) Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 100 I D (A) 100µs 1 1ms 0.1 10ms 0.01 TJ = 175ºC 100ms TC = 25ºC Single Pulse DC Z (th)JC (ºC / W) 25µs 10 0.001 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 IXYH40N65C3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 1.8 Eoff 2.0 Eoff 8 --- TJ = 150ºC , VGE = 15V 1.6 I C = 60A 6 1.2 5 1.0 4 0.8 3 I C = 30A 0.6 2 0.4 1 0.2 15 20 25 30 35 40 45 50 1.2 3 TJ = 150ºC 0.8 2 0.4 0.0 0 15 55 20 25 30 35 Eoff Eon ---- 50 55 60 4.5 90 4.0 80 tfi 400 td(off) - - - - 360 TJ = 150ºC, VGE = 15V 3.5 70 3.0 60 VCE = 400V 320 280 I C = 60A 50 240 0.8 2.5 0.6 2.0 40 1.5 30 160 1.0 20 120 0.5 150 10 0.4 200 I C = 30A t d(off) (ns) E on (mJ) I C = 60A t f i (ns) VCE = 400V 1.0 Eoff (mJ) 45 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance RG = 10Ω , VGE = 15V 1.2 40 I C (A) Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 1.4 1 TJ = 25ºC RG (Ω) 1.6 4 VCE = 400V 0 10 ---- E on (mJ) 1.4 Eon 5 RG = 10Ω , VGE = 15V 1.6 7 VCE = 400V E on (mJ) E off (mJ) Eon - 9 E off (mJ) 2.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current I C = 30A 0.2 0.0 25 50 75 100 125 80 10 15 20 25 30 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 70 td(off) - - - - 200 80 180 70 RG = 10Ω , VGE = 15V VCE = 400V 60 160 45 50 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) - - - - 55 150 140 RG = 10Ω , VGE = 15V VCE = 400V 60 130 140 120 30 100 TJ = 25ºC 20 80 10 60 0 40 15 20 25 30 35 40 45 50 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 55 60 50 120 40 110 I C = 30A, 60A 30 100 20 90 10 25 50 75 100 TJ (ºC) 125 80 150 t d(off) (ns) 40 t d(off) (ns) TJ = 150ºC t f i (ns) 50 t f i (ns) 40 RG (Ω) TJ (ºC) 80 35 IXYH40N65C3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 180 110 td(on) - - - - 120 100 TJ = 150ºC, VGE = 15V 160 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri 100 90 60 I C = 30A 80 50 60 40 40 30 20 20 0 t r i (ns) t r i (ns) 100 80 10 10 15 20 25 30 35 40 45 50 30 TJ = 25ºC, 150ºC 60 25 40 20 20 15 0 55 10 15 RG (Ω) t d(on) (ns) 70 t d(on) (ns) 120 35 VCE = 400V 80 I C = 60A td(on) - - - - RG = 10Ω , VGE = 15V VCE = 400V 140 40 20 25 30 35 40 45 50 55 60 I C (A) Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 180 38 tri 160 td(on) - - - - RG = 10Ω , VGE = 15V 140 VCE = 400V 34 32 I C = 60A 100 30 80 28 60 26 40 24 I C = 30A 20 22 0 25 50 t d(on) (ns) t r i (ns) 120 36 75 100 125 20 150 TJ (ºC) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_40N65C3D1(51) 8-12-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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