IXYH40N65C3D1

Preliminary Technical Information IXYH40N65C3D1 IXYQ40N65C3D1 XPTTM 650V IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.35V 20ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 80 40 50 180 A A A A IA EAS TC = 25°C TC = 25°C 20 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 80 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 5 μs PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms G G C E G = Gate E = Emitter 300 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6.0 5.5 g g     Md Mounting Torque Weight TO-247 TO-3P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE(sat) IC     = 40A, VGE = 15V, Note 1 TJ = 150C © 2018 IXYS CORPORATION, All Rights Reserved C = Collector Tab = Collector 6.0 V 10 A 1.5 mA 100 2.0 2.4 2.35 Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Fast Diode Avalanche Rated Short Circuit Capability High Power Density Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C VCE = 0V, VGE = 20V Tab Advantages  IGES Tab TO-3P (IXYQ)  Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s E Features TJ TJM Tstg TL TSOLD C nA V V        Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100625A(11/18) IXYH40N65C3D1 IXYQ40N65C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 16 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 40A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz TO-247 Outline 26 S 1950 205 40 pF pF pF 66 13 32 nC nC nC 23 40 0.83 110 20 0.36 ns ns mJ ns ns mJ D A A2 A2 Q + R A + 0K M D B M 0P O B E S D2 0P1 1 2 3 ixys option VCE = 400V, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 RthJC RthCS 0.65 24 40 1.60 130 30 0.53 ns ns mJ ns ns mJ 0.25 0.50 °C/W °C/W E1 L A1 c b b2 b4 Inductive load, TJ = 25°C IC = 30A, VGE = 15V 4 L1 C IC = 40A, VGE = 15V, VCE = 0.5 • VCES + D1 D e + J M C AM O PINS: 1 - Gate 2, 4 - Collector 3 - Emitter TO-3P Outline Reverse Fast Recovery Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 Irr trr IF = 30A, VGE = 0V, -diF/dt = 500A/μs, VR = 400V Characteristic Values Min. Typ. Max. TJ = 150°C 1.2 2.5 V V TJ = 150°C TJ = 150°C 23 120 A ns RthJC 0.60 °C/W Pins: Notes: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N65C3D1 IXYQ40N65C3D1 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 80 240 VGE = 15V 13V 12V 70 VGE = 15V 200 11V 14V 60 I C (A) I C (A) 160 10V 50 40 13V 12V 120 11V 9V 30 80 10V 20 8V 10 9V 40 8V 7V 0 0 0.5 1 1.5 2 2.5 3 0 3.5 4 0 5 10 15 VCE (V) 80 2.0 VGE = 15V 13V 12V 30 VGE = 15V 1.8 I C = 80A 11V 60 VCE(sat) - Normalized 1.6 50 I C (A) 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 70 20 VCE (V) 10V 40 30 9V 1.4 1.2 I C = 40A 1.0 0.8 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 I C = 20A 0.6 8V 7V 4.5 0.4 -50 5 -25 0 25 50 75 100 125 150 175 TJ (oC) VCE (V) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 6 70 o TJ = 25 C 60 5 4 I C = 80A I C (A) VCE (V) 50 3 40 30 o TJ = 150 C 20 40A o 25 C o - 40 C 2 10 20A 1 0 8 9 10 11 12 VGE - (V) © 2018 IXYS CORPORATION, All Rights Reserved 13 14 15 4.5 5.5 6.5 7.5 8.5 VGE (V) 9.5 10.5 11.5 IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 40 16 o TJ = - 40 C 35 VCE = 325V 14 30 I C = 40A I G = 10mA 12 o 25 C 10 o 150 C V GE (V) g f s (S) 25 20 8 15 6 10 4 5 2 0 0 0 10 20 30 40 50 60 70 80 0 10 20 30 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 90 10,000 f = 1 MHz 80 Cies 70 60 1,000 I C (A) Capacitance (pF) 40 QG (nC) IC (A) Coes 100 50 40 30 Cres 10 20 TJ = 150 C 10 RG = 10Ω dv / dt < 10V / ns o 0 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE (V) VCE (V) Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 1 1000 VCE(sat) Limit 100 25μs 100μs 1 1ms 0.1 0.1 Z (th)JC (K / W) I D (A) 10 10ms 100ms o TJ = 175 C 0.01 DC o TC = 25 C Single Pulse 0.001 1 0.01 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 1.8 Eoff TJ = 150 C , VGE = 15V I C = 60A 6 1.2 5 1.0 4 0.8 3 I C = 30A 0.6 2 0.4 1 0.2 15 20 25 30 35 40 45 50 4 VCE = 400V 1.2 3 o TJ = 150 C 0.8 2 0.4 0 15 55 20 25 30 35 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 1.4 Eon 50 55 60 4.5 90 4.0 80 tfi 400 td(off) 360 o TJ = 150 C, VGE = 15V 3.5 70 3.0 60 VCE = 400V 320 280 I C = 60A 50 240 0.8 2.5 0.6 2.0 40 1.5 30 160 1.0 20 120 0.5 150 10 0.4 200 I C = 30A t d(off) (ns) E on (mJ) I C = 60A t f i (ns) VCE = 400V 1.0 E off (mJ) 45 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance RG = 10Ω , VGE = 15V 1.2 40 I C (A) RG (Ω) 1.6 1 o TJ = 25 C 0.0 0 10 Eon Eon (mJ) 1.4 5 RG = 10Ω , VGE = 15V 1.6 7 VCE = 400V Eon (mJ) Eoff (mJ) Eoff 8 Eon o 1.6 2.0 9 E off (mJ) 2.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current I C = 30A 0.2 0.0 25 50 75 100 125 80 10 15 20 25 30 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 70 td(off) 200 80 180 70 RG = 10Ω , VGE = 15V VCE = 400V 60 160 45 50 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) 55 150 140 RG = 10Ω , VGE = 15V VCE = 400V 60 130 140 120 30 100 o TJ = 25 C 20 80 10 60 0 40 15 20 25 30 35 40 45 I C (A) © 2018 IXYS CORPORATION, All Rights Reserved 50 55 60 50 120 40 110 I C = 30A, 60A 30 100 20 90 10 25 50 75 TJ (oC) 100 125 80 150 t d(off) (ns) 40 t d(off) (ns) o TJ = 150 C t f i (ns) 50 t f i (ns) 40 RG (Ω) TJ (ºC) 80 35 IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 180 110 td(on) 120 100 o TJ = 150 C, VGE = 15V VCE = 400V 80 I C = 60A 70 100 60 I C = 30A 80 50 60 40 40 30 20 20 0 15 20 25 30 35 40 45 50 38 tri td(on) RG = 10Ω , VGE = 15V VCE = 400V 36 34 32 I C = 60A 30 80 28 60 26 40 24 I C = 30A 22 0 25 50 t d(on) (ns) t r i (ns) 120 20 75 o o 25 40 20 20 15 10 20 25 30 35 40 I C (A) 180 100 o TJ = 25 C, 150 C 60 15 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 30 0 55 RG (Ω) 160 35 80 10 10 td(on) RG = 10Ω , VGE = 15V 100 125 20 150 TJ ( C) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 45 50 55 60 t d(on) (ns) 120 40 VCE = 400V t d(on) (ns) t r i (ns) 140 tri 100 90 t r i (ns) 160 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current IXYH40N65C3D1 IXYQ40N65C3D1 Fig. 22. Diode Forward Characteristics Fig. 23. Reverse Recovery Charge vs. -diF/dt 80 1.8 70 1.7 IF = 60A VR = 400V 1.6 60 o TJ = 150 C QRR (μC) 1.5 50 I F (A) o TVJ = 150 C o TJ = 25 C 40 30 30A 1.4 1.3 1.2 20 15A 1.1 10 1 0.9 0 0 0.5 1 1.5 2 250 2.5 300 350 400 Fig. 24. Reverse Recovery Current vs. -diF/dt 500 550 600 650 700 Fig. 25. Reverse Recovery Time vs. -diF/dt 30 220 28 o o TVJ = 150 C 30A VR = 400V 26 TVJ = 150 C 200 15A 24 VR = 400V 180 tRR (ns) 22 I RR (A) 450 -diF/ dt (A/μs) VF (V) 20 18 160 IF = 60A 140 30A 16 120 14 IF = 60A 15A 100 12 10 80 250 300 350 400 450 500 550 600 650 250 700 300 350 400 Fig. 26. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.2 450 500 550 600 650 700 -diF/dt (A/μs) diF/dt (A/μs) Fig. 27. Maximum Transient Thermal Impedance (Diode) 1 VR = 400V 1 I F = 30A -dIF /dt = 500 A/μs Z(th)JC (K / W) KF 0.8 0.6 0.4 0.1 KF IRR KF QRR 0.2 0 0 20 40 60 80 100 TJ (ºC) © 2018 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) IXYS REF: IXY_40N65C3D1(51) 8-12-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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