IXYH50N120C3
1200V XPTTM IGBT
GenX3TM
VCES
IC110
VCE(sat)
tfi(typ)
High-Speed IGBT
for 20-50 kHz Switching
=
=
≤
=
1200V
50A
3.5V
43ns
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
VGES
VGEM
1200
1200
V
V
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C (Chip Capability)
TC = 110°C
TC = 25°C, 1ms
100
50
240
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 5Ω
Clamped Inductive Load
ICM = 100
@VCE ≤ VCES
A
PC
TC = 25°C
750
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
6
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
G
C
E
G = Gate
E = Emitter
Tab
C
= Collector
Tab = Collector
Features
z
z
z
z
z
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
High Current Handling Capability
International Standard Package
Advantages
z
z
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
1200
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = ±20V
VCE(sat)
IC
z
V
z
z
TJ = 150°C
IGES
z
= 50A, VGE = 15V, Note 1
TJ = 150°C
© 2013 IXYS CORPORATION, All Rights Reserved
3.1
4.2
5.0
V
25
250
μA
μA
±100
nA
3.5
V
V
z
z
z
z
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100343C(02/13)
IXYH50N120C3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
20
IC = 50A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 0.5 • VCES, RG = 5Ω
Note 2
Inductive load, TJ = 150°C
IC = 50A, VGE = 15V
VCE = 0.5 • VCES, RG = 5Ω
Note 2
RthJC
RthCS
Notes:
TO-247 (IXYH) Outline
32
S
3100
230
66
pF
pF
pF
142
23
60
nC
nC
nC
28
62
3.0
133
43
1.0
ns
ns
mJ
ns
ns
mJ
1.7
28
68
6.0
160
60
1.4
ns
ns
mJ
ns
ns
mJ
0.21
0.20 °C/W
°C/W
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Emitter
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYH50N120C3
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
250
100
VGE = 15V
VGE = 15V
13V
11V
10V
90
80
14V
13V
200
12V
IC - Amperes
IC - Amperes
70
9V
60
50
8V
40
150
11V
10V
100
9V
30
7V
20
50
10
6V
0
7V
6V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
5
10
20
VCE - Volts
Fig. 3. Output Characteristics @ T J = 150ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
25
2.2
VGE = 15V
13V
12V
11V
10V
80
70
VGE = 15V
2.0
I
1.8
VCE(sat) - Normalized
90
9V
60
50
8V
40
7V
30
C
= 100A
1.6
1.4
I
C
= 50A
1.2
1.0
0.8
20
6V
5V
0
0
1
2
3
4
5
6
7
I
C
= 25A
0.6
10
0.4
-50
8
-25
0
25
VCE - Volts
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
8.5
TJ = 25ºC
90
7.5
80
6.5
70
C
= 100A
IC - Amperes
I
VCE - Volts
15
VCE - Volts
100
IC - Amperes
8V
5.5
4.5
50A
3.5
60
50
40
30
TJ = 150ºC
25ºC
20
- 40ºC
2.5
10
25A
1.5
0
6
7
8
9
10
11
12
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
13
14
15
3
3.5
4
4.5
5
5.5
6
6.5
VGE - Volts
7
7.5
8
8.5
9
9.5
IXYH50N120C3
Fig. 7. Transconductance
Fig. 8. Gate Charge
44
16
TJ = - 40ºC
40
36
32
28
24
I C = 50A
I G = 10mA
12
25ºC
VGE - Volts
g f s - Siemens
VCE = 600V
14
150ºC
20
16
12
10
8
6
4
8
2
4
0
0
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
140
10,000
Cies
80
1,000
IC - Amperes
Capacitance - PicoFarads
100
Coes
100
60
40
20
Cres
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
TJ = 150ºC
RG = 5Ω
dv / dt < 10V / ns
0
200
400
600
800
1000
1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
IXYH50N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
6
3.5
30
Eoff
Eon -
---
TJ = 150ºC , VGE = 15V
5
3.0
25
15
2
10
I
C
0
15
VCE = 600V
15
2.0
1.5
9
TJ = 25ºC
1.0
6
5
0.5
3
20
25
0
0.0
20
30
30
40
50
5
t f i - Nanoseconds
Eoff - MilliJoules
8
4
I C = 50A
0
100
500
100
400
I
80
C
= 100A
300
I
60
0
5
10
15
160
tfi
td(off) - - - -
220
180
TJ = 125ºC
80
160
60
140
TJ = 25ºC
120
20
100
0
50
60
70
80
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
90
80
100
t f i - Nanoseconds
100
td(off) - - - -
170
RG = 5Ω , VGE = 15V
VCE = 600V
120
160
100
150
I C = 100A
80
140
I C = 50A
60
130
40
120
20
25
50
75
100
TJ - Degrees Centigrade
125
110
150
t d(off) - Nanoseconds
t f i - Nanoseconds
200
t d(off) - Nanoseconds
VCE = 600V
40
30
180
tfi
140
RG = 5Ω , VGE = 15V
30
25
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
240
20
20
RG - Ohms
160
40
200
20
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
120
= 50A
100
TJ - Degrees Centigrade
140
C
40
0
150
125
td(off) - - - -
TJ = 150ºC, VGE = 15V
t d(off) - Nanoseconds
12
2
75
0
100
VCE = 600V
Eon - MilliJoules
I C = 100A
50
120
16
VCE = 600V
25
90
600
tfi
1
80
140
----
RG = 5Ω , VGE = 15V
3
70
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
4
60
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eon
12
TJ = 150ºC
RG - Ohms
Eoff
18
= 50A
1
10
Eoff - MilliJoules
3
----
Eon - MilliJoules
I C = 100A
Eon
RG = 5Ω , VGE = 15V
2.5
20
Eon - MilliJoules
Eoff - MilliJoules
VCE = 600V
4
5
21
Eoff
IXYH50N120C3
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
350
I
200
tri
55
150
45
= 50A
100
35
50
25
0
10
15
20
25
160
36
TJ = 150ºC, 25ºC
120
32
80
28
40
24
0
15
5
40
VCE = 600V
200
C
td(on) - - - -
RG = 5Ω , VGE = 15V
= 100A
65
I
44
20
30
RG - Ohms
30
40
50
60
70
80
90
t d(on) - Nanoseconds
VCE = 600V
250
C
75
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
TJ = 150ºC, VGE = 15V
240
t r i - Nanoseconds
tri
300
85
20
100
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
240
44
tri
td(on) - - - -
RG = 5Ω , VGE = 15V
200
40
160
36
I
C = 100A
120
32
80
28
I C = 50A
40
24
0
25
50
t d(on) - Nanoseconds
t r i - Nanoseconds
VCE = 600V
75
100
125
20
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_50N120C3(6N)05-04-12
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