IXYH50N65C3H1

Preliminary Technical Information IXYH50N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.10V 27ns TO-247AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 130 50 40 250 A A A A IA EAS TC = 25°C TC = 25°C 20 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 100 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque   W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g Weight     BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V 6.0 TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved   V 1.74 2.00   V  50 A 3 mA  100 2.10 C = Collector Tab = Collector Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability International Standard Package High Power Density Extremely Rugged Low Gate Drive Requirement Applications  Characteristic Values Min. Typ. Max. Tab Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) E Features  600 C G = Gate E = Emitter  TJ TJM Tstg TL TSOLD G  Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters nA V V DS100572B(7/14) IXYH50N65C3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 19 IC = 36A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 36A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 36A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 36A, VGE = 15V VCE = 400V, RG = 5 Note 2 RthJC RthCS TO-247 (IXYH) Outline 28 S 2346 230 50 pF pF pF 80 15 40 nC nC nC 22 35 1.30 80 27 0.37 ns ns mJ ns ns mJ 23 33 1.70 100 42 0.56 ns ns mJ ns ns mJ 0.21 0.25 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 IRM trr IF = 30A, VGE = 0V, -diF/dt = 500A/μs, VR = 300V Characteristic Values Min. Typ. Max. TJ = 150°C 2.15 2.5 V V TJ = 150°C TJ = 150°C 25 120 A ns RthJC Notes: 0.60 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH50N65C3H1 Fig. 1. Output Characteristics @ TJ = 25ºC 55 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 280 VGE = 15V 13V 12V 11V 50 45 VGE = 15V 240 14V 200 10V 35 I C - Amperes I C - Amperes 40 30 25 9V 20 13V 160 12V 120 11V 80 15 10V 8V 10 40 5 9V 7V 0 8V 0 0 0.5 1 1.5 2 2.5 0 5 10 Fig. 3. Output Characteristics @ TJ = 150ºC 55 VGE = 15V 13V 12V 11V 50 45 20 1.6 VCE(sat) - Normalized 9V 30 25 8V 20 1.4 I C = 54A 1.2 1.0 I C = 36A 15 10 0.8 7V I C = 18A 5 6V 0 0.5 1 1.5 2 2.5 3 0.6 -50 3.5 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 30 VGE = 15V 10V 35 0 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.8 40 I C - Amperes 15 VCE - Volts VCE - Volts 90 TJ = 25ºC 4.5 Fig. 6. Input Admittance 100 80 4.0 3.0 I C - Amperes VCE - Volts 70 3.5 I C = 54A 2.5 36A 60 50 TJ = 150ºC 25ºC 40 - 40ºC 30 2.0 18A 20 1.5 10 0 1.0 8 9 10 11 12 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYH50N65C3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 45 16 TJ = - 40ºC 40 35 150ºC V GE - Volts g f s - Siemens I C = 36A I G = 10mA 12 25ºC 30 VCE = 325V 14 25 20 15 10 8 6 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0 10 20 30 40 50 60 70 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 80 10,000 100 80 1,000 I C - Amperes Capacitance - PicoFarads Cies Coes 100 40 TJ = 150ºC 20 Cres f = 1 MHz 60 10 RG = 5Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 100 VCE - Volts 700 VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 200 300 400 500 600 Fig. 11. Maximum Transient Thermal Impedance 1 aasss 0.4 VCE(sat) Limit 25µs 10 100µs 1 Z (th)JC - ºC / W I D - Amperes 100 0.1 1ms TJ = 175ºC 0.1 TC = 25ºC Single Pulse 10ms 0.01 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXYH50N65C3H1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 2.0 Eoff 1.8 Eon - 1.2 5.5 --- Eoff 5.0 1.2 3.5 1.0 3.0 0.8 2.5 0.6 E off - MilliJoules 4.0 TJ = 150ºC 0.8 0.6 1.8 TJ = 25ºC 0.4 1.2 0.2 0.6 1.5 0.2 0.0 1.0 5 10 15 20 25 30 35 40 0.0 18 45 22 26 30 RG - Ohms Eon ---- RG = 5Ω , VGE = 15V VCE = 400V 80 3.5 70 tfi 2.5 0.6 2.0 0.4 1.5 50 0.0 75 100 td(off) - - - 400 60 320 I C = 36A 50 240 40 160 30 80 20 0.5 150 125 0 5 10 15 20 25 30 35 40 TJ - Degrees Centigrade RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature td(off) - - - - 60 TJ = 150ºC 100 40 90 30 80 TJ = 25ºC 110 VCE = 400V 50 100 I C = 36A 40 90 30 80 70 I C = 54A 20 10 120 70 60 0 50 18 22 26 30 34 38 42 46 I C - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 50 54 10 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 110 t d(off) - Nanoseconds VCE = 400V 45 td(off) - - - - RG = 5Ω , VGE = 15V 120 60 20 tfi 130 RG = 5Ω , VGE = 15V 50 70 140 t f i - Nanoseconds tfi 80 480 I C = 54A 1.0 70 54 TJ = 150ºC, VGE = 15V I C = 36A 0.2 90 46 VCE = 400V E on - MilliJoules 0.8 50 42 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 3.0 I C = 54A 25 38 t d(off) - Nanoseconds 1.0 4.0 t f i - Nanoseconds Eoff 1.2 34 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 1.4 E off - MilliJoules 2.4 2.0 I C = 36A 0.4 t f i - Nanoseconds 3.0 E on - MilliJoules I C = 54A 1.4 ---- VCE = 400V E on - MilliJoules Eoff - MilliJoules 4.5 VCE = 400V Eon 3.6 RG = 5Ω , VGE = 15V 1.0 TJ = 150ºC , VGE = 15V 1.6 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYH50N65C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance tri 120 td(on) - - - - TJ = 150ºC, VGE = 15V I C = 36A 80 60 60 40 I C = 54A 40 20 20 10 15 20 25 30 35 40 td(on) - - - - VCE = 400V 50 24 30 22 TJ = 25ºC 20 tri 18 0 45 16 18 22 26 td(on) - - - - VCE = 400V 100 26 90 23 22 I C = 36A 30 21 20 10 25 50 75 100 38 42 46 50 54 125 70 I C - Amperes t r i - Nanoseconds 50 t d(on) - Nanoseconds 24 I C = 54A 40 34 80 25 60 30 Fig. 22. Maximum Peak Load Current vs. Frequency 27 RG = 5Ω , VGE = 15V 70 20 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 80 26 TJ = 150ºC 40 RG - Ohms 90 28 RG = 5Ω , VGE = 15V 10 0 5 30 t d(on) - Nanoseconds 80 t d(on) - Nanoseconds 100 tri 60 100 VCE = 400V t r i - Nanoseconds 70 120 t r i - Nanoseconds 140 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 60 Triangular Wave 50 TJ = 150ºC TC = 75ºC 40 VCE = 400V 30 VGE = 15V 20 20 RG = 5Ω Duty Cycle = 50% 19 150 10 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 Square Wave 100 fmax - KiloHertz 1,000 IXYH50N65C3H1 Fig. 23. Forward Current vs. Forward Voltage Fig. 24. Reverse Recovery Charge QRR vs. -diF/dt 100 2.4 TVJ = 150ºC 2.2 80 2 QRR - MicroCoulombs 150ºC I F - Amperes I F = 50A VR = 300V TVJ = 25ºC 60 40 1.8 30A 1.6 1.4 1.2 10A 20 1 0 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 400 600 800 1000 1200 1400 1600 2000 Fig. 26. Recover Time tRR vs. -diF/dt Fig. 25. Peak Reverse Current IRM vs. -diF/dt 140 70 TVJ = 150ºC TVJ = 150ºC 120 I F = 50A VR = 300V tRR - Nanaseconds 60 I RR - Amperes 1800 -diF/dt - A/µs VF - Volts 30A 50 10A 40 30 VR = 300V 100 80 I F = 50A 60 30A 20 10A 40 10 20 400 600 800 1000 1200 1400 1600 1800 2000 400 600 800 1.20 500 1400 1600 1800 2000 VR = 300V TVJ = 150ºC I F =50A VR = 300V IF = 50A 1.00 -dIF/dt = 900A/µs 400 350 30A 0.80 KF EREC - MicroJoules 1200 Fig. 28. Dynamic Parameters QRR, IRM vs. Virtual Junction Temperature TVJ Fig. 27. Recovery Energy EREC vs. -diF/dt 450 1000 -diF/dt - A/µs -diF/dt - A/µs 300 KF IRM 0.60 250 10A 200 0.40 KF QRR 150 0.20 100 400 600 800 1000 1200 1400 -diF/dt - A/µs © 2014 IXYS CORPORATION, All Rights Reserved 1600 1800 2000 0 20 40 60 80 100 TVJ - Degrees Centigrade 120 140 160 IXYH50N65C3H1 Fig. 29. Maximum Transient Thermal Impedance (Diode) Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_50N65C3(5D)8-09-13/DMHP19-067F_4-03-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.