IXYH55N120A4

IXYH55N120A4 1200V XPTTM GenX4TM IGBT VCES = IC110 = VCE(sat)  tfi(typ) = Ultra Low-Vsat PT IGBT for up to 5kHz Switching 1200V 55A 1.8V 270ns TO-247 (IXYH) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM G Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 175 55 350 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load ICM = 110 0.8 • VCES A PC TC = 25°C 650 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C VCE  TJ TJM Tstg TL Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s  Nm/lb.in 6 g Weight    BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V 6.5 VCE = 0V, VGE = 20V VCE(sat) IC = 55A, VGE = 15V, Note 1 TJ = 150C ©2020 Littelfuse, Inc.  V 5 A 2.5 mA TJ = 150C IGES  V 100 1.5 1.8 1.8 Optimized for Low Conduction Losses Positive Thermal Coefficient of Vce(sat) International Standard Package High Power Density Low Gate Drive Requirement Applications  Characteristic Values Min. Typ. Max. C = Collector Tab = Collector Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C (Tab) Features  1.13 / 10 E G = Gate E = Emitter  Mounting Torque C     Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protector Circuits nA V V DS100983C(4/20) IXYH55N120A4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 IC = 55A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 55A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 36 S 2150 125 80 pF pF pF 110 17 56 nC nC nC 23 35 2.3 300 270 5.3 ns ns mJ ns ns mJ 21 33 3.8 380 530 8.8 ns ns mJ ns ns mJ 0.21 0.23 °C/W C/W RthJC RthCS Notes: 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH55N120A4 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC VGE = 15V 13V 12V 11V 100 300 10V V GE = 15V 250 14V I C - Amperes I C - Amperes 80 9V 60 8V 40 200 13V 12V 150 11V 10V 100 9V 20 0 0 0.5 1 1.5 2 7V 50 8V 6V 0 7V 6V 2.5 3 0 5 15 20 Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 13V 12V 11V 10V 60 9V 8V 40 V GE = 15V 1.8 VCE(sat) - Normalized 80 I C = 110A 1.6 1.4 I C = 55A 1.2 1.0 7V 20 0.8 I C = 27.5A 6V 0 0.6 0 0.5 4.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 125 150 175 100 o TJ = 25 C 4.0 80 I C - Amperes 3.5 VCE - Volts 25 VCE - Volts 100 I C - Amperes 10 VCE - Volts 3.0 I C = 110A 2.5 60 40 o 2.0 TJ = 150 C 55A o 25 C 20 1.5 o - 40 C 27.5A 1.0 0 7 8 9 10 11 VGE - Volts ©2020 Littelfuse, Inc. 12 13 14 15 4 5 6 7 VGE - Volts 8 9 10 IXYH55N120A4 Fig. 7. Transconductance 50 Fig. 8. Gate Charge 16 o TJ = - 40 C 45 VCE = 600V 14 I C = 55A 40 I G = 10mA 12 o 25 C 30 VGE - Volts g f s - Siemens 35 o 150 C 25 20 10 8 6 15 4 10 2 5 0 0 0 20 40 60 80 100 120 0 20 40 I C - Amperes 80 100 120 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 120 Cies 100 1,000 80 Coes I C - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs 100 60 40 o TJ = 125 C Cres 20 f = 1 MHz 10 RG = 5Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 35 40 200 300 400 500 Fig.3011. Maximum Transient Thermal Impedance VCE - Volts 1 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaa 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYH55N120A4 Fig. 12. Inductive Switching Energy Loss vs. Collector Current 20 Eoff 18 16 Eon 9 VCE = 600V 5 8 4 6 3 o TJ = 25 C Eoff - MilliJoules 10 2 2 1 0 18 40 50 6 o TJ = 150 C 10 5 8 4 3 TJ = 25 C 4 60 70 2 2 400 80 500 600 700 800 900 I C - Amperes VCE - Volts Fig. 14. Inductive Switching Energy Loss vs. Gate Resistance Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 16 14 Eon o TJ = 150 C , VGE = 15V 16 I C = 40A 6 0 30 7 o 4 20 Eon Eoff 14 12 1 1000 14 Eon 12 RG = 5Ω,VGE = 15V I C = 80A VCE = 600V VCE = 600V 8 10 6 Eoff - MilliJoules 12 10 10 8 6 6 8 4 2 10 12 14 16 18 2 20 25 50 75 100 125 TJ - Degrees Centigrade Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 600 td(off) 1000 tfi 550 o TJ = 150 C, VGE = 15V 560 400 540 350 I C = 40A 520 300 500 500 600 400 o TJ = 150 C 400 300 o TJ = 25 C 200 200 250 480 200 4 6 8 10 12 RG - Ohms ©2020 Littelfuse, Inc. 14 16 18 20 0 100 20 30 40 50 I C - Amperes 60 70 80 t d(off) - Nanoseconds I C = 80A t d(off) - Nanoseconds 450 600 td(off) VCE = 600V 500 580 0 150 RG = 5Ω,VGE = 15V 800 I C = 40A VCE = 600V 600 2 RG - Ohms tfi 620 t f i - Nanoseconds 8 t f i - Nanoseconds 640 6 4 I C = 40A 4 I C = 40A 6 8 I C = 80A Eon - MilliJoules 10 Eon - MilliJoules Eoff - MilliJoules 12 14 4 Eon - MilliJoules 6 Eon - MilliJoules o TJ = 150 C 8 RG = 5Ω,VGE = 15V 12 7 12 Eoff 14 8 14 E off - MilliJoules 16 10 RG = 5Ω,VGE = 15V Fig. 13. Inductive Switching Energy Loss vs. Collector-Emitter Voltage IXYH55N120A4 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 700 tfi 600 450 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 200 td(off) tri 400 RG = 5Ω, VGE = 15V 160 200 100 50 75 100 125 t r i - Nanoseconds 150 150 0 10 4 6 8 10 12 14 16 18 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 130 36 tri td(on) 110 24 20 20 o TJ = 150 C 0 16 30 40 50 60 70 40 90 35 I C = 80A 70 30 50 25 30 20 I C = 40A 10 80 I C - Amperes 25 50 t d(on) - Nanoseconds o TJ = 25 C 45 VCE = 600V t d(on) - Nanoseconds 28 20 td(on) RG = 5Ω, VGE = 15V 32 60 20 20 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current VCE = 600V 30 I C = 40A RG - Ohms RG = 5Ω, VGE = 15V 40 80 TJ - Degrees Centigrade tri 80 40 40 200 100 t r i - Nanoseconds 120 t r i - Nanoseconds t f i - Nanoseconds 250 I C = 80A t d(on) - Nanoseconds I C = 80A 300 t d(off) - Nanoseconds 300 I C = 40A 25 50 VCE = 600V 350 400 td(on) o TJ = 150 C, VGE = 15V VCE = 600V 500 60 75 100 125 15 150 TJ - Degrees Centigrade Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_55N120A4 (Y17-RY90) 8-01-19 IXYH55N120A4 TO-247 Outline 1 - Gate 2,4 - Collector 3 - Emitter ©2020 Littelfuse, Inc. IXYH55N120A4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions.