IXYH60N90C3

IXYH60N90C3 XPTTM 900V IGBT GenX3TM VCES = IC110 = VCE(sat)  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 900V 60A 2.9V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ TJ VGES VGEM Maximum Ratings = 25°C to 175°C = 25°C to 175°C, RGE = 1M 900 900 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC TC TC 140 60 310 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 120 @VCE  VCES A PC TC 750 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g = 25°C (Chip Capability) = 110°C = 25°C, 1ms = 25°C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features     Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) International Standard Package Advantages   High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 950 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 150C © 2018 IXYS CORPORATION, All Rights Reserved  V 5.5 V 25 750 A A 100 nA TJ = 150C IGES  2.4 2.9 2.9       High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100452B(02/18) IXYH60N90C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 60A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 0.5 • VCES, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 0.5 • VCES, RG = 3 Note 2 RthJC RthCS Notes: TO-247 (IXYH) Outline 34 S 3285 175 56 pF pF pF 107 30 50 nC nC nC 30 77 2.70 87 88 1.55 ns ns mJ ns ns mJ 2.50 30 74 4.70 103 165 2.15 ns ns mJ ns ns mJ 0.21 0.20 °C/W °C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH60N90C3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 280 120 VGE = 15V 13V VGE = 15V 100 240 12V 14V 200 I C - Amperes 80 13V I C - Amperes 11V 60 10V 40 20 1 1.5 2 2.5 3 3.5 4 10V 9V 7V 0.5 11V 40 8V 0 12V 120 80 9V 0 160 7V 0 4.5 0 5 10 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 2.0 VGE = 15V 13V 12V VGE = 15V 1.8 80 VCE(sat) - Normalized 100 I C - Amperes 20 VCE - Volts VCE - Volts 120 15 11V 60 10V 40 9V 20 8V I C = 120A 1.6 1.4 1.2 I C = 60A 1.0 0.8 I C = 30A 0.6 6V 0.4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 50 75 100 125 150 175 13 14 TJ - Degrees Centigrade Fig. 6. Input Admittance 200 o TJ = 25 C 7 180 160 140 I C - Amperes VCE - Volts 6 5 I C = 120A 4 3 60A 120 100 80 TJ = 150 C 60 25 C o o o - 40 C 40 2 20 30A 1 0 9 10 11 12 13 VGE - Volts © 2018 IXYS CORPORATION, All Rights Reserved 14 15 4 5 6 7 8 9 VGE - Volts 10 11 12 IXYH60N90C3 Fig. 8. Gate Charge Fig. 7. Transconductance 70 16 o TJ = - 40 C 60 I C = 60A I G = 10mA 12 50 o 25 C o V GE - Volts g f s - Siemens VCE = 450V 14 150 C 40 30 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 220 0 10 20 30 40 I C - Amperes Fig. 9. Capacitance 10,000 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area 140 Cies 100 1,000 I C - Amperes Capacitance - PicoFarads 120 Coes 100 80 60 40 o TJ = 150 C Cres RG = 2Ω dv / dt < 10V / ns 20 f = 1 MHz 0 10 0 5 10 15 20 25 30 35 100 40 200 300 400 600 700 800 900 Fig. 11. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 500 VCE - Volts VCE - Volts 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYH60N90C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.5 Eoff Eoff 10 6 1.5 4 I C = 30A 1.0 E off - MilliJoules 2.0 10 15 20 25 30 6 o TJ = 150 C 2 4 o TJ = 25 C 2 0 0 5 3 1 2 0.5 8 VCE = 450V 0 30 35 40 50 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 3.0 Eon 3 1.0 2 t f i - Nanoseconds E off - MilliJoules 1.5 0.0 125 VCE = 450V 280 200 240 175 200 I C = 30A 150 160 1 100 0 150 75 120 I C = 60A 80 40 0 5 10 15 20 25 30 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 210 200 180 175 tfi td(off) RG = 3Ω, VGE = 15V 35 180 td(off) 160 RG = 3Ω, VGE = 15V VCE = 450V TJ = 150 C 150 120 100 90 150 140 I C = 60A 125 120 I C = 30A 100 100 o TJ = 25 C 50 0 30 40 50 60 70 I C - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 80 90 60 75 30 50 80 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 150 o t d(off) - Nanoseconds 200 t f i - Nanoseconds VCE = 450V t f i - Nanoseconds 320 TJ - Degrees Centigrade tfi 250 100 td(off) 125 I C = 30A 0.5 360 t d(off) - Nanoseconds 4 E on - MilliJoules I C = 60A 300 90 o 225 5 75 80 TJ = 150 C, VGE = 15V VCE = 450V 2.0 tfi 250 6 2.5 50 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 275 7 RG = 3ΩVGE = 15V 25 60 I C - Amperes RG - Ohms 3.5 E on - MilliJoules 8 E on - MilliJoules E off - MilliJoules I C = 60A 2.5 Eon RG = 3ΩVGE = 15V 4 VCE = 450V 0 10 Eon o TJ = 150 C , VGE = 15V 3.0 5 12 IXYH60N90C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 tri 180 td(on) 110 180 100 160 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current tri o TJ = 150 C, VGE = 15V 90 80 I C = 60A 120 70 100 60 80 50 I C = 30A 60 30 40 28 26 20 20 10 0 20 25 30 tri 120 td(on) 50 60 70 80 90 33 32 RG = 3Ω, VGE = 15V VCE = 450V 31 80 30 I C = 60A 60 29 40 28 t d(on) - Nanoseconds 100 40 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 24 30 35 RG - Ohms t r i - Nanoseconds 32 20 15 34 80 30 10 o TJ = 25 C, 150 C 100 40 5 36 o 40 0 38 VCE = 450V 120 60 0 40 t d(on) - Nanoseconds 140 td(on) RG = 3Ω, VGE = 15V 140 t r i - Nanoseconds VCE = 450V t d(on) - Nanoseconds t r i - Nanoseconds 160 42 I C = 30A 20 27 0 25 50 75 100 125 26 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_60N90C3(71) 02-28-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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