IXYH75N65C3

XPTTM 650V IGBT GenX3TM IXYH75N65C3 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 175 160 75 360 A A A A IA EAS TC = 25°C TC = 25°C 30 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 150 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C 750 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque G Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features  TJ TJM Tstg 650V 75A 2.3V 60ns      International Standard Package Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages   High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V  6.0 V 10 500 A A nA IGES VCE = 0V, VGE = 20V 100 VCE(sat) IC 1.8 2.2 © 2015 IXYS CORPORATION, All Rights Reserved  V TJ = 150C = 60A, VGE = 15V, Note 1 TJ = 150C  2.3      Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100562C(4/15) IXYH75N65C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 60A, VCE = 10V, Note 1 3410 190 73 VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS Notes: 44 TO-247 (IXYH) Outline S D A A2 Q pF pF pF 122 22 60 nC nC nC 26 65 2.00 93 60 0.95 ns ns mJ ns ns mJ 26 64 3.40 115 64 1.30 ns ns mJ ns ns mJ 0.21 0.20 °C/W °C/W B E R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH75N65C3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 150 300 VGE = 15V 14V 13V 12V 120 VGE = 15V 14V 13V 250 11V 12V 200 I C (A) I C (A) 90 10V 11V 150 60 9V 10V 100 30 7V 0 0 1 2 3 9V 50 8V 8V 7V 0 4 0 5 10 15 VCE (V) VCE (V) Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 150 2.2 VGE = 15V 14V 13V 12V VGE = 15V 2.0 11V 1.8 VCE(sat) - Normalized 120 10V I C (A) 90 60 9V I C = 120A 1.6 1.4 1.2 I C = 60A 1.0 0.8 8V 30 I C = 30A 0.6 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.4 5 -50 -25 0 25 50 VCE (V) 75 100 125 150 175 TJ (ºC) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 20 Fig. 6. Input Admittance 140 TJ = 25ºC 120 5 100 I C (A) VCE (V) 4 I C = 120A 3 80 60 60A 2 TJ = 150ºC 25ºC 40 30A 1 - 40ºC 20 0 0 8 9 10 11 12 VGE - (V) © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE (V) 9 10 11 IXYH75N65C3 Fig. 7. Transconductance Fig. 8. Gate Charge 16 70 TJ = - 40ºC I C = 60A 50 25ºC 12 150ºC 10 VGE (V) 40 g f s (S) VCE = 325V 14 60 30 I G = 10mA 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 0 180 20 40 60 80 100 120 QG (nC) I C (A) Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 160 10,000 140 120 1,000 100 I C (A) Capacitance (pF) Cies Coes 80 60 100 40 TJ = 150ºC 20 RG = 3Ω dv / dt < 10V / ns Cres f = 1 MHz 10 0 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE (V) VCE (V) Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance (IGBT) 1000 1 VCE(sat) Limit I D (A) 25µs 100µs 10 Z (th)JC (ºC / W) 100 1ms 1 0.1 0.01 TJ = 175ºC 10ms TC = 25ºC Single Pulse DC 0.1 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 10 IXYH75N65C3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4.0 Eoff 3.5 Eon - 2.4 9 --- Eoff 8 2.0 TJ = 150ºC , VGE = 15V VCE = 400V 3.0 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Eon 6 ---5 RG = 3Ω , VGE = 15V VCE = 400V 7 1.6 1.5 4 E off (mJ) 5 1.2 3 TJ = 150ºC 0.8 2 3 I C = 40A TJ = 25ºC 0.4 0.5 1 2 0.0 0.0 1 0 5 10 15 20 25 30 0 40 35 45 50 55 60 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 3.0 Eoff 2.5 Eon 70 75 80 6 120 5 100 4 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance tfi ---- RG = 3Ω , VGE = 15V 600 td(off) - - - 500 TJ = 150ºC, VGE = 15V VCE = 400V 400 60 300 I C = 40A, 80A 2 40 200 1 20 100 0 150 0 1.0 0.5 t d(off) (ns) E on (mJ) 3 I C = 80A t f i (ns) VCE = 400V 2.0 1.5 65 I C (A) RG (Ω) E off (mJ) Eon (mJ) I C = 80A 2.0 1.0 4 6 E on (mJ) E off (mJ) 2.5 I C = 40A 0.0 25 50 75 100 125 0 0 5 10 15 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 30 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 120 160 tfi td(off) - - - - RG = 3Ω , VGE = 15V 80 25 100 140 160 VCE = 400V TJ = 25ºC 100 t f i (ns) TJ = 150ºC 140 60 120 I C = 80A 40 20 80 0 60 40 45 50 55 60 65 70 I C (A) © 2015 IXYS CORPORATION, All Rights Reserved 75 80 100 I C = 40A 20 80 0 25 50 75 100 TJ (ºC) 125 60 150 t d(off) (ns) 120 t d(off) (ns) t f i (ns) 80 60 180 td(off) - - - - RG = 3Ω , VGE = 15V VCE = 400V 40 35 RG (Ω) TJ (ºC) 100 20 IXYH75N65C3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 200 120 110 180 tri td(on) - - - - 160 TJ = 150ºC, VGE = 15V Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri 100 100 90 I C = 80A 100 60 80 50 I C = 40A 60 40 40 30 20 20 0 80 t r i (ns) t r i (ns) 70 10 10 15 20 25 30 40 TJ = 25ºC, 150ºC 60 40 20 20 10 0 35 0 40 45 RG (Ω) tri td(on) - - - - RG = 3Ω , VGE = 15V 55 60 65 70 75 80 Fig. 22. Maximum Peak Load Current vs. Frequency 34 100 90 32 80 VCE = 400V 100 30 70 I C = 80A 28 60 26 40 24 Triangular Wave 60 I C (A) 80 t d(on) (ns) t r i (ns) 50 I C (A) Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 120 30 t d(on) (ns) 120 t d(on) (ns) 80 140 50 VCE = 400V 140 5 td(on) - - - - RG = 3Ω , VGE = 15V VCE = 400V 0 60 50 TJ = 150ºC 40 TC = 75ºC I C = 40A 20 22 0 25 50 75 100 125 20 150 TJ (ºC) 30 VCE = 400V 20 VGE = 15V 10 RG = 3Ω D = 0.5 Square Wave 0 10 100 1,000 fmax (kHz) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_75N65C3D1(71-R47) 8-20-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.