IXYH75N65C3H1

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode IXYH75N65C3H1 VCES = IC110 = VCE(sat)  tfi(typ) = 650V 75A 2.3V 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 IF110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 170 160 75 62 360 A A A A A IA EAS TC = 25°C TC = 25°C 30 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 150 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 750 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features   TJ TJM Tstg TL TSOLD G      International Standard Package Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Anti-Parallel Sonic Diode Advantages   High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V 6.0  V 50 A 4 mA IGES VCE = 0V, VGE = 20V 100 VCE(sat) IC 1.8 2.2 © 2013 IXYS CORPORATION, All Rights Reserved  V TJ = 150C = 60A, VGE = 15V, Note 1 TJ = 150C  2.3      Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts nA V V DS100573A(7/14) IXYH75N65C3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 75A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 3 Note 2 RthJC RthCS TO-247 (IXYH) Outline 42 S 3450 307 70 pF pF pF 123 24 60 nC nC nC 27 67 2.8 93 50 1.0 ns ns mJ ns ns mJ 26 57 3.3 108 58 1.3 ns ns mJ ns ns mJ 0.21 0.20 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 50A, VGE = 0V, Note 1 IRM trr IF = 50A, VGE = 0V, -diF/dt = 900A/μs, VR = 300V Characteristic Values Min. Typ. Max. TJ = 150°C 1.8 2.5 V V TJ = 150°C TJ = 150°C 45 150 A ns RthJC Notes: 0.45 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH75N65C3H1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 300 VGE = 15V 13V 12V 11V 140 12V 250 10V 11V 100 200 9V I C - Amperes I C - Amperes 120 VGE = 15V 13V 80 60 8V 40 10V 150 9V 100 7V 8V 50 20 7V 6V 5V 0 0 1 2 3 6V 0 0 4 5 10 2.2 VGE = 15V 13V 12V 11V 10V 100 I C - Amperes VGE = 15V 2.0 1.8 V CE(sat) - Normalized 120 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 140 15 VCE - Volts VCE - Volts 9V 80 8V 60 7V 40 I C = 150A 1.6 1.4 1.2 I C = 75A 1.0 0.8 6V 20 I C = 37.5A 0.6 5V 0 0 1 2 3 4 0.4 -50 5 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 120 TJ = 25ºC 7 100 80 5 I C - Amperes VCE - Volts 6 I C = 150A 4 3 60 75A 40 37.5A 20 TJ = 150ºC 25ºC - 40ºC 2 1 0 0 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 2 3 4 5 6 VGE - Volts 7 8 9 IXYH75N65C3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 70 16 TJ = - 40ºC 25ºC 50 I C = 75A I G = 10mA 12 150ºC V GE - Volts g f s - Siemens VCE = 325V 14 60 40 30 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 0 200 20 40 I C - Amperes 60 80 100 120 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 160 10,000 Cies 120 1,000 Coes I C - Amperes Capacitance - PicoFarads 140 100 100 80 60 40 Cres f = 1 MHz 20 10 TJ = 150ºC RG = 3Ω dv / dt < 10V / ns 0 0 5 10 15 20 VCE - Volts 1 25 35 40 100 200 Fig.3011. Maximum Transient Thermal Impedance 300 400 500 600 700 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aasss 0.5 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYH75N65C3H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff 3 --- Eoff 7 TJ = 150ºC , VGE = 15V 2 5 RG = 3ΩVGE = 15V 1.5 4 1 3 0.5 2 I C = 40A 0 12 15 18 21 24 27 30 1.2 3 TJ = 25ºC 0.8 2 0.4 1 0 20 33 25 30 35 40 45 RG - Ohms Eoff Eon 100 1.0 2.5 0.6 1.5 I C = 40A 0.2 100 t f i - Nanoseconds 3.5 - MilliJoules Eoff - MilliJoules on 1.4 tfi VCE = 400V 350 80 300 70 250 I C = 80A I C = 40A 60 150 40 100 50 3 6 9 12 15 td(off) - - - - 150 tfi 90 110 TJ = 25ºC 100 60 65 I C - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 70 125 120 75 80 115 70 110 I C = 80A 60 105 I C = 40A 50 100 80 30 90 70 20 20 55 td(off) - - - - 95 90 50 33 40 30 10 t f i - Nanoseconds TJ = 150ºC 50 45 30 25 50 75 100 TJ - Degrees Centigrade 125 85 150 t d(off) - Nanoseconds 120 40 27 VCE = 400V 80 t d(off) - Nanoseconds t f i - Nanoseconds 140 60 35 24 RG = 3Ω, VGE = 15V 130 30 21 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 100 160 70 25 18 RG - Ohms VCE = 400V 20 200 50 RG = 3Ω, VGE = 15V 40 400 30 0.5 150 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 80 80 td(off) - - - - TJ - Degrees Centigrade 90 75 t d(off) - Nanoseconds 4.5 I C = 80A E 1.8 100 70 TJ = 150ºC, VGE = 15V 5.5 75 65 450 tfi 90 50 60 110 6.5 ---- VCE = 400V 25 55 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance RG = 3ΩVGE = 15V 2.2 50 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 2.6 4 0 1 9 TJ = 150ºC 1.6 Eon - MilliJoules 5 E on - MilliJoules I C = 80A 6 6 ---- 6 2 3 Eon VCE = 400V VCE = 400V 2.5 E off - MilliJoules Eon - 2.4 8 E off - MilliJoules 3.5 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH75N65C3H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri 160 140 100 td(on) - - - - 90 70 100 60 I C = 40A 80 50 60 40 40 30 20 20 0 VCE = 400V 6 9 12 15 18 21 24 27 30 100 27 80 26 TJ = 150ºC 60 40 24 20 23 22 20 33 25 30 35 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri 140 td(on) - - - - 60 26 40 25 I C = 40A 24 0 75 65 70 75 80 Square Wave 100 70 I C - Amperes t r i - Nanoseconds 27 t d(on) - Nanoseconds 28 80 50 60 Triangular Wave 29 I C = 80A 25 55 90 80 VCE = 400V 20 50 Fig. 21. Maximum Peak Load Current vs. Frequency 30 100 45 100 31 RG = 3Ω, VGE = 15V 120 40 I C - Amperes RG - Ohms 160 25 0 10 3 28 TJ = 25ºC t d(on) - Nanoseconds 120 29 td(on) - - - - RG = 3Ω, VGE = 15V 80 t r i - Nanoseconds VCE = 400V t d(on) - Nanoseconds t r i - Nanoseconds 140 tri 120 TJ = 150ºC, VGE = 15V I C = 80A Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 125 23 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 60 50 TJ = 150ºC 40 TC = 75ºC 30 VCE = 400V 20 VGE = 15V 10 RG = 3Ω D = 0.5 0 10 100 fmax - KiloHertzs 1,000 IXYH75N65C3H1 Fig. 23. Typ. Reverse Recovery Charge Qrr vs. -diF/dt Fig. 22. Typ. Forward characteristics 10 100 TVJ = 150ºC VR = 300V 8 80 IF = 100A TVJ = 25ºC TVJ = 150ºC 6 I F [A] Q RM [µC] 60 40 50A 4 25A 20 2 0 0 0 0.5 1 1.5 2 2.5 3 400 600 800 VF - [V] TVJ = 150ºC trr [ns] I RM [A] 200 40 150 30 100 1000 1200 1400 VR = 300V 50A 250 25A 50 800 1600 TVJ = 150ºC IF = 100A 300 50A 600 1400 350 IF = 100A VR = 300V 60 20 400 1200 Fig. 25. Typ. Recovery Time trr vs. -diF/dt Fig. 24. Typ. Peak Reverse Current IRM vs. -diF/dt 80 70 1000 -diF/ dt [A/µs] 25A 50 1600 400 600 800 diF/dt [A/µs] 1000 1200 1400 1600 -diF/dt [A/µs] Fig. 27. Maximum Transient Thermal Impedance Fig. 26. Typ. Recovery Energy Erec vs. -diF/dt 2.0 1 TVJ = 150ºC 1.8 VR = 300V 1.6 1.2 50A 1.0 Z(th)JC - ºC / W Erec [mJ] IF = 100A 1.4 0.1 0.8 25A 0.6 0.4 400 600 800 1000 1200 -diF/dt [A/µs] © 2013 IXYS CORPORATION, All Rights Reserved 1400 1600 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: IXY_75N65C3(71-R47) 9-23-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.