IXYT80N90C3
IXYH80N90C3
XPTTM 900V IGBT
GenX3TM
VCES =
IC110 =
VCE(sat)
tfi(typ) =
High-Speed IGBT
for 20-50 kHz Switching
900V
80A
2.7V
86ns
TO-268 (IXYT)
G
E
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
900
900
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
ILRMS
IC110
ICM
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
165
160
80
360
A
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
ICM = 160
@VCE VCES
A
PC
TC = 25°C
830
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
4
6
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-247)
Weight
TO-268
TO-247
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IC
= 250A, VGE = 0V
950
VGE(th)
IC
= 250A, VCE = VGE
3.5
ICES
VCE = VCES, VGE = 0V
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC
= 60A, VGE = 15V, Note 1
TJ = 150C
5.5
V
25
750
A
A
100
nA
2.3
2.9
2.7
G
E
C (Tab)
C
= Collector
Tab = Collector
Features
V
V
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
International Standard Packages
High Power Density
Low Gate Drive Requirement
Applications
© 2015 IXYS CORPORATION, All Rights Reserved
C
G = Gate
E = Emiiter
V
TJ = 150C
TO-247 (IXYH)
Advantages
Characteristic Values
Min.
Typ.
Max.
BVCES
C (Tab)
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100446B(12/15)
IXYT80N90C3
IXYH80N90C3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
23
IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 80A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
Inductive load, TJ = 150°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
TO-247
TO-268 Outline
38
S
4550
243
77
pF
pF
pF
145
42
65
nC
nC
nC
34
103
4.3
90
86
1.9
ns
ns
mJ
ns
ns
mJ
2.7
34
100
5.7
103
98
2.5
ns
ns
mJ
ns
ns
mJ
0.21
0.18 °C/W
°C/W
Terminals: 1 - Gate
3 - Emitter
TO-247 Outline
1
Notes:
2,4 - Collector
2
P
3
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
e
Terminals: 1 - Gate
3 - Emitter
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYT80N90C3
IXYH80N90C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
160
VGE = 15V
14V
13V
140
12V
I C - Amperes
100
14V
250
120
I C - Amperes
VGE = 15V
300
11V
80
10V
60
13V
200
12V
150
11V
100
9V
40
20
10V
50
8V
9V
7V
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
7V
0
4
0
5
10
15
30
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.2
160
VGE = 15V
13V
12V
VGE = 15V
2.0
I C = 160A
1.8
V CE(sat) - Normalized
120
11V
I C - Amperes
25
VCE - Volts
VCE - Volts
140
20
100
80
10V
60
9V
40
1.6
1.4
I C = 80A
1.2
1.0
0.8
8V
20
I C = 40A
0.6
6V
0.4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
5.5
-25
0
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
50
75
100
125
150
Fig. 6. Input Admittance
200
7
180
TJ = 25ºC
6
160
140
I C - Amperes
5
VCE - Volts
25
TJ - Degrees Centigrade
I C = 160A
4
80A
40A
3
120
TJ = 150ºC
25ºC
100
- 40ºC
80
60
40
2
20
1
0
8
9
10
11
12
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
8
9
VGE - Volts
10
11
12
IXYT80N90C3
IXYH80N90C3
Fig. 7. Transconductance
Fig. 8. Gate Charge
80
16
TJ = - 40ºC
VCE = 450V
14
60
25ºC
12
50
150ºC
10
V GE - Volts
g f s - Siemens
70
40
30
8
6
20
4
10
2
0
I C = 80A
I G = 10mA
0
0
20
40
60
80
100
120
140
160
180
200
0
220
20
40
I C - Amperes
60
80
100
120
140
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
180
10,000
140
120
1,000
I C - Amperes
Capacitance - PicoFarads
160
Cies
Coes
100
80
60
100
Cres
f = 1 MHz
40
TJ = 150ºC
20
RG = 2Ω
dv / dt < 10V / ns
0
10
0
5
10
15
20
25
30
35
100
40
200
300
400
500
600
700
800
900
VCE - Volts
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
1000
1
VCE(sat) Limit
25µs
100µs
10
1ms
Z(th)JC - K / W
ID - Amperes
100
0.1
0.01
1
TJ = 175ºC
TC = 25ºC
Single Pulse
10ms
DC
0.1
1
10
100
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXYT80N90C3
IXYH80N90C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
3.4
12
Eoff
Eon -
10
2.2
6
1.8
4
Eoff - MilliJoules
E off - MilliJoules
I C = 80A
1.0
3
4
5
6
7
8
9
10
11
12
13
14
3
6
TJ = 150ºC
2
4
TJ = 25ºC
40
15
50
60
RG - Ohms
VCE = 450V
7
225
6
200
Eoff - MilliJoules
2.0
4
1.5
3
1.0
50
75
100
125
VCE = 450V
280
175
150
200
125
160
I C = 80A
120
1
75
80
0
150
50
40
2
3
4
5
6
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
tfi
200
td(off) - - - -
VCE = 450V
tfi
140
175
100
100
TJ = 25ºC
90
50
80
25
70
80
I C - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
90
70
100
t f i - Nanoseconds
t f i - Nanoseconds
110
60
11
12
13
14
15
180
td(off) - - - 160
150
I C = 40A
140
125
120
100
100
I C = 80A
75
80
50
25
50
75
100
TJ - Degrees Centigrade
125
60
150
t d(off) - Nanoseconds
TJ = 150ºC
125
50
10
VCE = 450V
t d(off) - Nanoseconds
120
40
9
RG = 2Ω, VGE = 15V
130
150
75
8
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
200
150
RG = 2Ω, VGE = 15V
175
7
RG - Ohms
TJ - Degrees Centigrade
225
240
I C = 40A
100
0.5
25
320
2
I C = 40A
0.0
E on - MilliJoules
5
td(off) - - - -
t d(off) - Nanoseconds
I C = 80A
2.5
360
tfi
TJ = 150ºC, VGE = 15V
t f i - Nanoseconds
----
RG = 2ΩVGE = 15V
3.0
0
100
90
250
8
3.5
80
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
4.0
Eon
70
I C - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff
2
0
0
2
8
VCE = 450V
1
2
I C = 40A
----
E on - MilliJoules
8
E on - MilliJoules
2.6
Eon
RG = 2ΩVGE = 15V
4
VCE = 450V
1.4
10
Eoff
TJ = 150ºC , VGE = 15V
3.0
5
---
IXYT80N90C3
IXYH80N90C3
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
180
td(on) - - - -
76
TJ = 150ºC, VGE = 15V
VCE = 450V
140
100
52
80
44
I C = 40A
60
36
40
28
20
t d(on) - Nanoseconds
60
I C = 80A
3
4
5
6
7
8
9
10
11
12
13
14
tri
80
32
60
30
40
28
50
60
70
80
90
26
100
37
35
120
34
I C = 80A
100
33
80
32
60
31
40
30
I C = 40A
20
29
0
50
34
36
VCE = 450V
25
100
75
100
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
RG = 2Ω, VGE = 15V
140
36
I C - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
160
120
40
15
RG - Ohms
180
TJ = 25ºC, 150ºC
20
20
2
38
RG = 2Ω, VGE = 15V
VCE = 450V
68
120
td(on) - - - -
t d(on) - Nanoseconds
140
40
tri
t r i - Nanoseconds
160
t r i - Nanoseconds
160
84
tri
125
28
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_80N90C3(7D) 02-16-12
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