IXYJ20N120C3D1

IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat) d tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M: VGES VGEM Continuous Transient IC25 IC110 IF110 ICM TC TC TC TC IA EAS TC = 25°C TC = 25°C SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10: Clamped Inductive Load PC TC = 25°C ISO TO-247TM E153432 Maximum Ratings 1200 1200 V V ±20 ±30 V V 21 9 15 84 A A A A 10 400 A mJ ICM = 40 @VCE d VCES A 105 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2500 V~ 5 g = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque VISOL 50/60 Hz, RM, t = 1min Weight G z z = 250PA, VGE = 0V 1200 VGE(th) IC = 250PA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V z z z z z z IGES VCE = 0V, VGE = r20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150qC 5.0 V 25 350 PA zA r100 nA 3.4 V V © 2013 IXYS CORPORATION, All Rights Reserved 4.0 C = Collector Optimized for Low Switching Losses Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated Advantages z V TJ = 125qC Isolated Tab High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. IC E Features z BVCES C G = Gate E = Emitter z Symbol Test Conditions (TJ = 25qC, Unless Otherwise Specified) 1200V 9A 3.4V 108ns z z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100486B(8/13) IXYJ20N120C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 7.0 IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 0.5 • VCES, RG = 10: Note 2 Inductive load, TJ = 150°C IC = 20A, VGE = 15V VCE = 0.5 • VCES, RG = 10: Note 2 RthJC RthCS ISO TO-247 (IXYJ) OUTLINE 11.5 S 1110 120 27 pF pF pF 53 9 22 nC nC nC 20 29 1.3 90 108 0.5 ns ns mJ ns ns mJ 1.0 20 40 3.7 115 105 0.7 ns ns mJ ns ns mJ 0.15 1.19 °C/W °C/W PINS: 1 = Gate 2 = Collector 3 = Emitter 4 = Isolated Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions VF IRM trr IF = 30A,VGE = 0V, Note 1 Characteristic Value Min. Typ. Max. TJ = 150°C IF = 30A,VGE = 0V, -diF/dt = 100A/zs, TJ = 100°C VR = 600V 195 TJ = 100°C RthJC Notes: 3.00 V V 9 A 1.75 ns 1.25 °C/W 1. Pulse test, t d 300zs, duty cycle, d d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYJ20N120C3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 100 40 VGE = 15V 13V 11V 10V 35 80 13V 9V 12V 25 I C - Amperes I C - Amperes 30 VGE = 15V 8V 20 15 60 11V 10V 40 9V 7V 10 8V 20 5 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.4 40 VGE = 15V 13V 11V 10V 30 2.0 9V 25 20 8V 15 7V 10 I C = 40A 1.6 I C = 20A 1.2 0.8 I C = 10A 6V 5 5V 0 0 1 2 3 4 30 VGE = 15V VCE(sat) - Normalized 35 I C - Amperes 6V 0 6 5 6 7 0.4 -50 8 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 50 11 TJ = - 40ºC 25ºC 150ºC 45 TJ = 25ºC 40 9 7 I C - Amperes VCE - Volts 35 I C = 40A 5 20A 30 25 20 15 3 10 5 10A 1 0 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4.5 5.5 6.5 7.5 VGE - Volts 8.5 9.5 10.5 IXYJ20N120C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 16 14 12 12 25ºC 10 150ºC VGE - Volts g f s - Siemens TJ = - 40ºC 14 8 6 I C = 20A I G = 10mA 10 8 6 4 4 2 2 0 VCE = 600V 0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 I C - Amperes 20 25 30 35 40 45 50 55 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 40 1,000 I C - Amperes Capacitance - PicoFarads f = 1 MHz C ies 100 30 20 C oes 10 TJ = 150ºC RG = 10Ÿ dv / dt < 10V / ns C res 10 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) 10 Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 IXYJ20N120C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 2 Eon - 1.6 Eoff 1.2 0.8 8 10 1.0 8 TJ = 150ºC 0.8 6 0.6 4 I C = 20A TJ = 25ºC 0.4 4 0 0.4 15 20 25 30 35 40 45 50 2 0.2 0 10 0 20 55 22 24 26 28 1.4 ---- 0.6 4 t f i - Nanoseconds Eoff - MilliJoules 6 I C = 20A 2 0.2 100 280 240 100 200 I C = 20A 80 160 I C = 40A 120 40 80 20 0 150 125 320 120 60 0.4 40 10 15 20 25 30 35 40 45 50 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 140 160 130 td(off) - - - - RG = 10Ÿ , VGE = 15V 80 100 TJ = 25ºC 60 90 40 80 20 70 22 24 26 28 30 32 34 I C - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 36 38 40 tfi td(off) - - - - 130 RG = 10Ÿ , VGE = 15V VCE = 600V 120 120 I C = 20A 100 110 80 100 60 90 I C = 40A 40 80 20 25 50 75 100 TJ - Degrees Centigrade 125 70 150 t d(off) - Nanoseconds 110 t d(off) - Nanoseconds TJ = 150ºC 100 55 140 140 120 t f i - Nanoseconds tfi VCE = 600V t f i - Nanoseconds td(off) - - - - t d(off) - Nanoseconds 0.8 E on - MilliJoules I C = 40A 120 40 VCE = 600V 140 8 75 38 TJ = 150ºC, VGE = 15V VCE = 600V 20 tfi 160 1.0 50 36 360 10 RG = 10Ÿ , VGE = 15V 25 34 180 12 Eon 32 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 30 I C - Amperes RG - Ohms 1.2 Eon - MilliJoules I C = 40A ---- VCE = 600V Eon - MilliJoules 12 Eon RG = 10Ÿ , VGE = 15V 16 VCE = 600V 1.2 12 --- TJ = 150ºC , VGE = 15V E off - MilliJoules Eoff Eoff - MilliJoules 1.4 20 IXYJ20N120C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 280 td(on) - - - - I C = 40A 30 80 25 I C = 20A 23 120 22 80 21 TJ = 150ºC 40 40 20 TJ = 25ºC 20 0 0 15 10 15 20 25 30 35 40 45 50 19 20 55 22 24 26 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 27 32 34 36 38 40 45 td(on) - - - - Triangular Wave 40 RG = 10Ÿ , VGE = 15V 25 80 21 I C = 20A 40 TC = 75ºC VCE = 600V VGE = 15V 30 I C - Amperes 23 t d(on) - Nanoseconds I C = 40A 120 TJ = 150ºC 35 VCE = 600V t r i - Nanoseconds 30 Fig. 21. Maximum Peak Load Current vs. Frequency 200 160 28 I C - Amperes RG - Ohms tri t d(on) - Nanoseconds 35 td(on) - - - - VCE = 600V t d(on) - Nanoseconds 40 160 120 tri RG = 10Ÿ , VGE = 15V 160 VCE = 600V 200 24 45 TJ = 150ºC, VGE = 15V t r i - Nanoseconds tri 240 t r i - Nanoseconds 200 50 19 RG = 10ȍ D = 0.5 25 Square Wave 20 15 10 5 0 25 50 75 100 125 17 150 0 0.1 1 10 100 1000 fmax - KiloHertzs TJ - Degrees Centigrade Fig. 22. Maximum Transient Thermal Impedance (Diode) 10 Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_20N120C3(4L) 9-06-13-C IXYJ20N120C3D1 Fig. 23. Forward Current IF vs VF 70 Fig. 24. Reverse Recovery Charge QRM vs. -diF/dt 5 TVJ = 100ºC 60 VR = 600V 4 50 IF = 60A TVJ = 150ºC IF [A] 100ºC 40 3 25ºC QRM [μC] 30 30A 2 15A 20 1 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 100 1000 500 VF [V] -diF/dt [A/μs] Fig. 26. Dynamic Parameters QRM, IRM vs. TVJ Fig. 25. Peak Reverse Current IRM vs. -diF/dt 60 2 TVJ = 100ºC I RM & QRM [normalized] VR = 600V 50 40 IF = 60A, 30A, 15A I RM 30 [A] 20 1.5 1 IRM 0.5 QRM 10 0 0 0 200 400 600 800 20 1000 40 60 80 -diF/dt [A/μs] Fig. 27. Recovery Time trr vs. -diF/dt 220 100 120 Fig. 28. Peak Forward Voltage VFR, trr vs -diF/dt 120 IF = 30A 100 VR = 600V 1.2 1 trr 80 trr [ns] 160 TVJ = 100ºC TVJ = 100ºC 200 140 TVJ [ºC] 0.8 180 VFR [V] IF = 60A 30A 15A 160 140 120 0.6 trr 60 [μs] VFR 40 0.4 20 0.2 0 0 200 400 600 -diF/dt [A/μs] © 2013 IXYS CORPORATION, All Rights Reserved 800 1000 0 100 200 300 400 500 600 -diF/dt [A/μs] 700 800 900 0 1000